Method of producing thin-film storage disk

• US 4,816,127 A
• Filed: 12/27/1985
• Issued: 03/28/1989
• Est. Priority Date: 11/15/1984
• Status: Expired due to Fees

• Current Assignee: Komag Inc (Western Digital Corporation)
• Original Assignee: Xidex Corp. (Anacomp Incorporated)
• Inventors: Eltoukhy, Atef
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Nguyen, Nam X.
• Application Number:
  US06/814,229
• Time in Patent Office: 1,187 Days
• Field of Search: 204/192 R, 204/192 M, 204/192 C, 204/298, 204/192.15, 204/192.2, 360/135, 428/64, 428/209, 428/216, 428/667, 428/668, 428/900, 428/928
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/044 using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
• CPC Class Codes: G11B 5/84 Processes or apparatus specially adapted for manufacturing record carriers
• CPC Class Codes: G11B 5/851 Coating a support with a magnetic layer by sputtering

Abstract

A method of producing a thin-film magnetic disk having high coercivity and magnetic remanence, good loop squareness, and low fluctuation in peak-to-peak recording signal amplitude over an entire circular recording path. The novel aspects of the method which contribute to the performance characteristics of the disk are (a) layering a 300-1,000 Å magnetic film containing between about 70-88% cobalt, 10-28% nickel, and 2-12% chromium over a 1,000-4,000 Å chromium underlayer; (b) forming the film and underlayer under sputtering disposition conditions which prevent low-angle asymmetrical sputtering; and (c) shielding the disk substrate during sputtering in a manner which produces substantially uniform-thickness deposition.

Claims

1. A method of producing a magnetic disk having a substantially isotropic, uniform-thickness magnetic film, said method comprising

placing a planar circular substrate on a pallet for movement, linearly and without rotation, along a path through a sputtering chamber having a first target adapted to sputter a crystalline underlayer onto the substrate, and a second, downstream, target adapted to sputter the magnetic film onto the underlayer,

moving the substrate through a first region underlying the first target, under shielding conditions provided by a fixed-position baffle which (a) limit deposition of sputtered material onto the substrate to substrate regions which substantially underlie the target and (b) provide substantially symmetrical, substantially unhindered side-to-side deposition onto the substrate, and

moving the substrate through a second region underlying the second target under shielding conditions provided by a fixed-position baffle which (a) provide substantially symmetrical, substantially unhindered side-to-side deposition onto the substrate, and (b) provide less shielding between the target and substrate, on progressing radially outwardly away from a center region of the substrate paralleling the path of travel, toward opposite side regions of the substrate.

2. The method of claim 1, wherein the two targets each have left and right side regions dimensioned to overlie left and right substrates, respectively, which are moved through the corresponding target region in a side-to-side fashion, and the shielding conditions within each target restrict deposition of sputtered material from the left target side region onto the right substrate, and from the right target region onto the left substrate.

3. The method of claim 1, wherein the shielding conditions in the second target region are provided by a structure which includes a tapered projection extending in the direction of movement of the substrate.

4. The method of claim 1, for producing a magnetic disk having coercivity of at least about 700 Oersteds, a magnetic remanence of at least about 3×

10^-3 EMU/cm², a loop squareness ratio of at least about 0.85, and characterized by fluctuations in peak-to-peak recording signal amplitude, over an entire circular recording path, of no more than about 15%, wherein the underlayer which is sputtered onto the substrate is a chromium underlayer having a thickness between about 1,000-4,000 Å

, and the magnetic film which is sputtered onto the underlayer is an alloy containing between about 70-88% cobalt, 10-28% nickel, and 2-12% chromium, and having a thickness between about 300-1,000 Å

.