Photolithographic method producing sub-micron patterns in the manufacture of electronic microcircuits
First Claim
1. A method of producing sub-micron patterns in the manufacture of an electronic microcircuit, said method comprising(a) forming a high resolution, plasma developable, photosensitive coating composition by dissolving a photosensitively effective amount of a photosensittive aromatic azide and a polymer selected from the group consisting of poly 2,4,6-trichlorophenyl methacrylates and acrylates of the formula ##STR6## where R is H or CH3, copolymers thereof with methyl methacrylate and copolymers thereof with methyl acrylate;
- (b) applying said coating composition to a semiconductor substrate;
(c) preheating said coated substrate at a temperature below 100°
C. to remove said organic solvent;
(d) irradiating the coated surface through a mask of a desired pattern with radiation having a wavelength of less than 400 nm or an electron beam;
(e) post-heating the irradiated surface to remove the photosensitive compound from the irradiated areas of the surface;
(f) and then developing said coated surface by exposing said surface to oxygen plasma to thereby preferentially remove the non-irradiated areas and form aperatures in said areas in the coating.
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Abstract
A high-resolution photosensitive composition which can be plasma-developed, including an acrylic a polymer and a photosensitive compound, of the aromatic azide group, in which the polymer contains, in a side chain, at least one aromatic nucleus where at least one chlorine atom (Cl) has replaced at least one hydrogen atom (H), for example ##STR1##
10 Citations
3 Claims
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1. A method of producing sub-micron patterns in the manufacture of an electronic microcircuit, said method comprising
(a) forming a high resolution, plasma developable, photosensitive coating composition by dissolving a photosensitively effective amount of a photosensittive aromatic azide and a polymer selected from the group consisting of poly 2,4,6-trichlorophenyl methacrylates and acrylates of the formula ##STR6## where R is H or CH3, copolymers thereof with methyl methacrylate and copolymers thereof with methyl acrylate; -
(b) applying said coating composition to a semiconductor substrate; (c) preheating said coated substrate at a temperature below 100°
C. to remove said organic solvent;(d) irradiating the coated surface through a mask of a desired pattern with radiation having a wavelength of less than 400 nm or an electron beam; (e) post-heating the irradiated surface to remove the photosensitive compound from the irradiated areas of the surface; (f) and then developing said coated surface by exposing said surface to oxygen plasma to thereby preferentially remove the non-irradiated areas and form aperatures in said areas in the coating. - View Dependent Claims (2, 3)
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Specification
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- Resources
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Current AssigneeUS Philips Corporation (Koninklijke Philips N.V.)
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Original AssigneeUS Philips Corporation (Koninklijke Philips N.V.)
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InventorsCollet, Andre, Maurin, Olivier, Gourrier, Serge
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Primary Examiner(s)Bowers, Jr., Charles L.
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Application NumberUS07/142,050Time in Patent Office446 DaysField of Search430/296, 430/311, 430/325, 430/330, 430/197, 430/194US Class Current430/296CPC Class CodesG03F 7/0125 characterised by the polyme...
