Method of producing semiconductor device having multilayer conductive lines

• US 4,816,424 A
• Filed: 11/10/1986
• Issued: 03/28/1989
• Est. Priority Date: 03/25/1983
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Fujita, Ichiro, Ohtake, Hideaki, Watanabe, Kiyoshi, Takeuchi, Tohru
• Primary Examiner(s): Chaudhuri, Olik
• Application Number:
  US06/928,330
• Time in Patent Office: 869 Days
• Field of Search: 204/192.17, 204/192.25, 148/DIG. 158, 148/DIG. 20, 437/187, 437/190, 437/192
• US Class Current: 438/653
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/7685 the layer covering a conductive structure H01L21/76849 takes precedence
• CPC Class Codes: H01L 21/76886 Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: Y10S 257/915 with titanium nitride portion or region

Abstract

A triple-layer electrode structure or a multilayer interconnecting structure of a semiconductor device comprising a contact (a lower conductive) layer of aluminum or its alloy which comes into contact with a silicon substrate, a barrier layer of refractory metal nitride (e.g. titanium nitride) and refractory metal (e.g., tungsten), and a (upper) conductive layer of aluminum or its alloy. The TiN-W barrier layer prevents overdissolution of silicon into aluminum in spite of heat-treatment at a relatively elevated temperature. The barrier layer is formed by sintering a mixture of refractory metal nitride powder and refractory metal powder to form a target which is sputter deposited on the contact layer in an atomsphere excluding gaseous nitrogen.

Claims

1. A method of forming a multilayer structure of a semiconductor device comprising a contact layer in contact with a semiconductor substrate, a barrier layer formed on the contact layer and a conductive layer formed on the barrier layer, comprising the steps of:

(a) mixing refractory metal nitride powder and refractory metal powder to produce a refractory metal nitride mixture;

(b) sintering the refractory metal nitride mixture to form a target of combined refractory metal nitride; and

(c) sputtering the target in an atmosphere substantially excluding nitrogen gas to deposit the combined refractory metal nitride on the contact layer.

2. The method according to claim 1, wherein said refractory metal is a metal selected from the group consisting of tungsten, titanium, zirconium, hafnium, and tantalum.

3. A method according to claim 1, further comprising the step of supplying quantities of the refractory metal nitride powder and the refractory metal powder to be mixed in step (a) so that the refractory metal nitride mixture includes the refractory metal nitride powder in a range of 10 to 90 percent by weight.