CCD area image sensor operable in both of line-sequential and interlace scannings and a method for operating the same

• US 4,816,916 A
• Filed: 09/29/1987
• Issued: 03/28/1989
• Est. Priority Date: 09/30/1986
• Status: Expired due to Term

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Akiyama, Ikuo
• Primary Examiner(s): Ng, Jin F.
• Assistant Examiner(s): BRINICH, STEPHEN M
• Application Number:
  US07/102,104
• Time in Patent Office: 546 Days
• Field of Search: 358/213.22, 358/213.29, 358/213.31, 358/909, 358/212
• US Class Current: 348/317
• CPC Class Codes: H01L 27/14831 Area CCD imagers
• CPC Class Codes: H04N 25/42 by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
• CPC Class Codes: H04N 25/441 by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
• CPC Class Codes: H04N 25/73 using interline transfer [IT]

Abstract

A CCD area image sensor includes, on a single semiconductor chip, a matrix of imaging elements, a plurality of vertical shift registers formed in parallel with rows of the matrix, a first horizontal shift register formed on one side of the matrix, a plurality of lines of CCD memories formed on another side of the matrix opposite to the one side, a second horizontal shift register formed on the same side of the matrix as the lines of CCD memories and first and second charge detectors formed at ends of the first and second horizontal shift registers. The method for operating the CCD area image sensor to produce signals with interlace and line sequential scannings is also described.

Claims

1. A CCD area image sensor formed on a single semi-conductor chip and comprising:

a plurality of imaging elements arranged in rows and columns to form a matrix, said imaging elements accumulating charges in response to light incident thereon;

a plurality of vertical shift registers, each vertical shift register being formed along and in parallel with a corresponding column of said imaging elements, and said vertical shift registers being capable of shifting charges in reversible directions along said columns;

a first horizontal shift register formed outside said matrix so as to receive charges from said vertical shift registers;

a plurality of lines and memories formed outside said matrix, each of said lines being formed in a direction of said columns so as to store charges transferred from said vertical shift registers and to shift said stored charges to one end thereof;

a second horizontal shift register formed to receive the shifted charges from said one end of each of said lines of memories;

a first charge detector formed at an end portion of said first horizontal shift register to produce a first electrical signal in response to charges shifted through said first horizontal shift register; and

a second charge detector at an end portion of said second horizontal shift register to produce a second electrical signal in response to charges shifted through said second horizontal shift register.

2. The CCD area image sensor as claimed in claim 1, further comprising a switch for alternately outputting said first and second electrical signals.

3. The CCD area image sensor as claimed in claim 2, further comprising means for transferring said charges accumulated in said imaging elements of every other of said row to said lines of memories through said vertical shift registers to store said charges accumulated in said imaging elements of every other of said rows in said lines of memories;

means for transferring said stored charges in said lines of memories to said second horizontal shift register and transferring said charges accumulated in said imaging elements of remaining rows to said first horizontal shift register; and

means for shifting said charges transferred to one of said first and second horizontal shift registers through said one of said first and second horizontal shift registers after said charges transferred to the other of said first and second horizontal shift registers are shifted through said other of said first and second horizontal shift registers.

4. The CCD area image sensor as claimed in claim 1, wherein said second horizontal shift register is positioned between said matrix and said lines of memories, said charges transferred for said vertical shift registers being shifted to said lines of memories through said second horizontal shift register to be stored in said lines of memories.

5. The CCD area image sensor as claimed in claim 4, wherein said lines of memories are lines of CCD shift registers for reversibly shifting charges therethrough.

6. The CCD area image sensor as claimed in claim 4, further comprising a switch for alternately outputting said first and second electrical signals.

7. A method for operating a CCD area image sensor comprising:

a plurality of imaging elements arranged in rows and columns to form a matrix, said imaging elements accumulating charges in response to light incident thereon;

a plurality of vertical shift registers formed respectively in parallel with said columns of said imaging elements;

a first horizontal shift register formed outside said matrix;

a plurality of lines of memories formed outside said matrix to receive charges from said vertical shift registers;

a second horizontal shift register formed to receive charges from said lines of memories;

a first charge-voltage converter for converting charges shifted through said first horizontal shift register into a first electrical signal;

a second charge-voltage converter for converting charges shifted through said second horizontal shift register into a second electrical signal; and

a switch for selectively outputting said first and second electrical signals,

said method comprising steps of;

transferring first charges accumulated in said imaging elements of every other one of said rows to said vertical shift registers;

shifting said first charges through said vertical shift registers to store them in said lines of memories;

transferring second charges accumulated in said imaging elements of the remaining rows to said vertical shift registers;

transferring a part of said first charges and a part of said second charges to said second and first horizontal shift registers, respectively; and

shifting said transferred charges through one of said first and second horizontal shift registers to be output as an electrical signal through one of said first and second charge-voltage converters and said switch, followed by shifting said transferred charges through the other of said first and second horizontal shift registers to output as another electrical signal through the other of said first and second charge-voltage converters and said switch.

8. A CCD area image sensor comprising:

a semiconductor chip;

a structure of CCD imaging sensor for producing a signal for a interlace scanning system in response to light incident thereon, said structure including a matrix of imaging elements, a plurality of vertical shift registers formed in parallel with respective rows of said matrix, a first horizontal shift register formed on one side of said matrix and a first charge detector formed at one end of said first horizontal shift register;

a plurality of lines of memories formed on another side of said matrix opposite to said one side;

a second horizontal shift register formed on the same side of said matrix as said lines of memories; and

a second charge detector formed at one end of said second horizontal shift register.

9. The CCD area image sensor as claimed in claim 8, wherein said second horizontal shift register is disposed between said lines of memories and said matrix.

10. The CCD area image sensor as claimed in claim 8, wherein said lines of memories are disposed between said second horizontal shift register and said matrix.