Method of making a high performance MOS device having LDD regions with graded junctions

• US 4,818,714 A
• Filed: 12/02/1987
• Issued: 04/04/1989
• Est. Priority Date: 12/02/1987
• Status: Expired due to Term

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Haskell, Jacob D.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US07/127,995
• Time in Patent Office: 489 Days
• Field of Search: 156/643, 156/650, 156/652, 156/653, 437/30, 437/34, 437/41, 437/44, 437/56, 437/57, 437/154, 437/235, 437/238, 437/241, 437/233, 357/23.3, 357/59 G, 357/44, 357/23.4, 357/23.9, 357/23.11, 148/DIG. 122, 148/DIG. 131, 148/DIG. 106
• US Class Current: 438/231
• CPC Class Codes: H01L 21/823814 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: Y10S 148/106 Masks, special
• CPC Class Codes: Y10S 148/131 Reactive ion etching rie
• CPC Class Codes: Y10S 257/90 MOSFET type gate sidewall insulating spacer

Abstract

An MOS structure and a method for making same, including the formation of el-shaped shielding members used to form one or more lightly doped drain regions to avoid short channel and punch-through problems is disclosed which comprises forming a shielding layer of an insulating material over a gate electrode on a substrate; forming another layer of a dissimilar material over the shielding layer; anisotropically etching the layer of dissimilar material to form spacer portions adjacent the sidewalls of the gate electrode; removing the portions of the shielding layer not masked by the spacer portions, leaving one or more el-shaped shielding members; removing the spacer portions; N+ or P+ implanting the substrate at a sufficiently low energy to prevent penetration of the dopant through the el-shaped shielding member to form a highly doped source/drain region in the substrate not shielded by the el-shaped shielding member or the gate electrode; N- or P- implanting the substrate at a sufficiently high energy to penetrate through the el-shaped shielding member to form a lightly doped source/drain region in the portion of the substrate adjacent the P+ or N+ source/drain regions and separating the channel region of the substrate beneath the gate electrode from the P+ or N+ source/drain region.

Claims

1. A method for making an MOS structure having a lightly doped drain region to avoid short channel and punchthrough problems which comprises:

(a) forming a gate electrode on a substrate;

(b) forming a shielding layer of an insulating material over the gate electrode and substrate;

(c) forming another layer of a dissimilar material over said shielding layer;

(d) anisotropically etching said layer of dissimilar material over said shielding layer to remove said layer except for spacer portions over said shielding layer adjacent the sidewalls of said gate electrode;

(e) removing the portions of said shielding layer not masked by said spacer portions, leaving one or more el-shaped shielding members each having a vertical portion against said gate electrode and a horizontal leg beneath said spacer portion extending over said substrate from said vertical portion;

(f) removing said spacer portion over said el-shaped shielding member;

(g) then implanting said substrate with a dopant material at a sufficiently low energy to prevent penetration of said dopant through said el-shaped shielding member and a concentration high enough to form a highly doped source/drain region in the portion of the substrate not shielded by said el-shaped shielding member or said gate electrode; and

(h) then implanting said substrate with a dopant material of the same type at a sufficiently high energy to penetrate through said el-shaped shielding member at a concentration low enough to form a lightly doped source/drain region in the portion of the substrate shielded by said el-shaped shielding member adjacent the region of said substrate beneath said gate electrode;

whereby said low concentration implantation will form a lightly doped source/drain region separating the channel region of the substrate beneath said gate electrode from said highly doped source/drain region.

2. The method of claim 1 wherein said step of forming a shielding layer over said gate electrode and said substrate further comprises first forming an oxide layer over said gate electrode and said substrate, said oxide layer having a thickness, over said substrate, of about 200-300 Angstroms, and then form said shielding layer over said oxide layer.

3. A method for making an MOS structure having a lightly doped drain region to avoid short channel and punchthrough problems which comprises:

(a) forming one or more gate electrodes on a substrate;

(b) forming an oxide layer over said substrate and said gate electrode having a thickness, over said substrate, of about 200-300 Angstroms;

(c) forming a nitride shielding layer over said oxide layer on said gate electrode and substrate;

(d) forming a conformal third layer of a material selected from the class consisting of silicon oxide and polysilicon over said shielding layer;

(e) anisotropically etching said third layer to remove said layer except for spacer portions over said nitride shielding layer adjacent the sidewalls of said gate electrode;

(f) removing the portions of said nitride shielding layer not masked by said spacer portions, using said spacer portions as masks, to thereby form one or more el-shaped nitride shielding members each having a vertical portion against said gate elelctrode and a horizontal leg extending over said oxide layer and said substrate from said vertical portion;

(g) removing said spacer portion over said el-shaped nitride shielding member;

(h) implanting said substrate in a first implantation step, after removal of said spacer portion, with a dopant material at a sufficiently low energy to prevent penetration of said dopant through said el-shaped nitride shielding member and a concentration high enough to form an N+ or P+ source/drain region in the portion of said substrate not shielded by said el-shaped nitride shielding member or said gate electrode;

(i) implanting said substrate, in a second implantation step, with a dopant material of the same type as previously implanted in said first implantation step, at a sufficiently high energy to penetrate through said el-shaped shielding member and at a concentration low enough to form an N- or P- region in the portion of the substrate shielded by said el-shaped shielding member adjacent the region of said substrate beneath said gate electrode; and

(j) annealing said substrate sufficiently to repair damage done to said substrate by said implantations;

whereby said P- or N- implantation will form a lightly doped source/drain region separating the channel region of the substrate beneath said gate electrode from said P+ or N+ source/drain region.

4. The method of claim 3 including the further steps of masking said MOS device formed on said substrate and then forming a second MOS device of opposite conductivity type by repeating said high energy and low energy implantation steps in another portion of said substrate containing another of said gate electrodes using one or more dopants of opposite conductivity type to the dopants used to form the first MOS device and using said el-shaped shielding members to form LDD regions in said second MOS devices.

5. The method of claim 3 wherein said annealing step laterally diffuses said lightly doped source and drain regions toward said channel region under said gate electrode and said process further comprises controlling the thickness of said nitride shielding layer to provide a width of said vertical portion of said el-shaped shielding member approximately equal to the lateral diffusion of said lightly doped source and drain regions whereby said vertical leg will shield the portion of said substrate during said high energy implantation step into which said lightly doped region will laterally diffuse, whereby said lateral diffusion will not extend into the channel region beneath said gate electrode.

6. The method of claim 3 wherein said step of forming a conformal third layer comprises forming an oxide layer doped with a dopant which permits selective etching of said oxide layer at a rate faster than the etch rate of undoped oxide portions associated with said MOS structure.

7. The method of claim 6 wherein said doped oxide layer comprises a silicon oxide material doped with phosphorus.

8. The method of claim 7 wherein said step of removing said spacer portion formed from said doped oxide layer further comprising etching said oxide spacer with a selective wet buffered oxide etch which will remove doped oxide at a rate faster than the etch rate of undoped oxide.

9. A method for making NMOS and PMOS structures having lightly doped drain regions to avoid short channel and punchthrough problems in an integrated circuit structure which comprises:

(a) forming two or more gate electrodes on a substrate;

(b) forming an oxide layer over said substrate and said gate electrodes having a thickness, over said substrate, of about 200-300 Angstroms;

(c) forming a nitride shielding layer over said oxide layer on said gate electrodes and substrate;

(d) forming a conformal third layer of a material selected from the class consisting of silicon oxide and polysilicon over said shielding layer;

(e) anisotropically etching said third layer to remove said layer except for spacer portions over said nitride shielding layer adjacent the sidewalls of said gate electrodes;

(f) removing the portions of said nitride shielding layer not masked by said spacer portions, using said spacer portions as masks, to thereby form one or more el-shaped nitride shielding members each having a vertical portion against each of said gate electrodes and a horizontal leg extending over said oxide layer and said substrate from said vertical portion;

(g) removing said spacer portion over said el-shaped nitride shielding member;

(h) forming a mask over a portion of said substrate containing one or more of said gate electrodes wherein one or more MOS devices of a second conductivity type will be formed;

(i) implanting the unmasked portion of said substrate in a first implantation step, after removal of said spacer portion, with a dopant material of a first conductivity type at a sufficiently low energy to prevent penetration of said dopant through said el-shaped nitride shielding member and a concentration high enough to form an N+ or P+ source/drain region of said first conductivity type in the portion of said substrate not shielded by said el-shaped nitride shielding member or said gate electrode;

(j) implanting said substrate, in a second implantation step, with a dopant material of the same type as previously implanted, at a sufficiently high energy to penetrate through said el-shaped shielding member and at a concentration low enough to form an N- or P- region in the portion of the substrate shielded by said el-shaped shielding member adjacent the region of said substrate beneath said gate electrode;

(k) unmasking said masked portions of said substrate and masking those portions of said substrate in which said MOS devices of said first conductivity type were formed;

(l) implanting the unmasked portion of said substrate, in a third implantation step, with a dopant material of a second conductivity type at a sufficiently low energy to prevent penetration of said dopant through said el-shaped nitride shielding member and a concentration high enough to form an N+ or P+ source/drain region of said second conductivity type in the unmasked portion of said substrate not shielded by said el-shaped nitride shielding member or said gate electrode;

(m) implanting said substrate, in a fourth implantation step, with a dopant material of the same conductivity type as previously implanted in said third implantation step, at a sufficiently high energy to penetrate through said el-shaped shielding member and at a concentration low enough to form an N- or P- region in the portion of the substrate shielded by said el-shaped shielding member adjacent the region of said substrate beneath said gate electrode;

(n) unmasking said masked portions of said substrate;

(o) removing said el-shaped nitride shielding members; and

(p) annealing said substrate sufficiently to repair damage done to said substrate by said implantations;

whereby said respective P- or N- implantations of said first and second conductivity types will respectively form lightly doped source/drain regions separating the respective channel regions of said PMOS and NMOS devices in said substrate beneath said gate electrodes from said respective P+ or N+ source/drain regions.

10. A method for making an MOS structure having a lightly doped drain region to avoid short channel and punch-through problems which comprises:

(a) forming a gate electrode on a substrate;

(b) forming an oxide layer over said gate electrode and said substrate to a thickness of about 200-300 Angstroms over said substrate;

(c) forming a shielding layer of an insulating material over said oxide layer and said underlying gate electrode and substrate;

(d) forming another layer of a dissimilar material over said shielding layer;

(e) anisotropically etching said layer of dissimilar material over said shielding layer to remove said layer except for spacer portions over said shielding layer adjacent the sidewalls of said gate electrode;

(f) removing the portions of said shielding layer not masked by said spacer portions, leaving one or more el-shaped shielding members each having a vertical portion against said gate electrode and a horizontal leg beneath said spacer portion extending over said substrate from said vertical portion;

(g) removing said spacer portions over said el-shaped shielding members;

(h) after removing said spacer portions, implanting said substrate in a first implantation step with a dopant material at a sufficiently low energy to prevent penetration of said dopant through said el-shaped shielding members and a concentration high enough to form highly doped source/drain regions in the portion of the substrate not shielded by said el-shaped shielding members or said gate electrode; and

(i) implanting said substrate in a second implantation step with a dopant material of the same type as in said first implantation step but at sufficiently high energy to penetrate through said el-shaped shielding members and at a concentration low enough to form lightly doped source/drain regions in the portions of said substrate shielded by said el-shaped shielding members adjacent the region of said substrate beneath said gate electrode;

whereby said low concentration implantation will form lightly doped source/drain regions separating the channel region of said substrate beneath said gate electrode from said highly doped source/drain regions.

11. The method of claim 10 wherein said steps of anisotropically etching said layer of dissimilar material to remove said layer except for spacer portions over said shielding layer adjacent the sidewalls of said shielding layer not masked by said spacer portions, further comprises reactive ion etching both said layer of dissimilar material and said shielding layer stopping on said underlying oxide layer to form said el-shaped shielding members.

12. The method of claim 10 wherein said steps of anisotropically etching said layer of dissimilar material to remove said layer except for spacer portions over said shielding layer adjacent the sidewalls of said gate electrode and removing the portions of said shielding layer not masked by said spacer portions, further comprise reactive ion etching said layer of dissimilar material stopping on said underlying shielding layer and then selectively etching said shielding layer, using said spacer portions as a mask, to form said el-shaped shielding members over said oxide layer and said substrate.

13. The method of claim 10 wherein said step of forming said shielding layer further comprises forming a layer of nitride over said layer of oxide formed over said substrate and said gate electrode.

14. The method of claim 13 wherein said step of forming said layer of dissimilar material over said nitride shielding layer further comprises forming a layer over said shielding layer selected from the class consisting of polysilicon and silicon oxide.

15. The method of claim 14 including the further step of selectively masking said shielding layer over said other portion of said substrate where said second MOS device is to be formed to selectively remove said shielding layer and form said el-shaped shielding members only in the portion of said substrate wherein said first MOS device will be formed with the remainder of said shielding layer functioning as a mask to protect the remainder of said substrate during said implantations to form said first MOS device;

and then, after masking said first MOS device, selectively etching said remaining shielding layer to form said el-shaped shielding members adjacent said gate electrode in the region of said substrate wherein said second MOS device will be formed.

16. The method of claim 15 wherein said portion of said substrate having said shielding layer thereon wherein said second MOS will be subsequently formed also has said spacer portions thereon to protect the underlying region of said second MOS device during the steps of implanting the substrate to form said first MOS device,

17. The method of claim 10 wherein said step of forming a gate electrode over said substrate further includes forming a plurality of gate electrodes on said substrate to permit the formation of both N channel and P channel MOS devices thereon and said method includes the further steps of masking the first MOS device formed on said substrate and then forming a second MOS device of opposite conductivity type by forming said spacer portions and said el-shaped shielding members adjacent the gate electrode of said second MOS device in another portion of said substrate and then, after removing said spacer portions, repeating said high energy and low energy implantation steps using one or more dopants of opposite conductivity type to the dopants used to form the first MOS device.

18. The method of claim 17 wherein said steps of forming said spacer portions and said el-shaped shielding members adjacent the gate electrode of said second MOS device in another portion of said substrate are performed prior to said implantation steps to form said first MOS device with LDD regions.

19. The method of claim 18 including the further step of masking the region wherein said second MOS device will be formed after forming said spacers and said el-shaped shielding members and prior to said implantation steps to form said first MOS device.

20. A method for making an MOS structure having a lightly doped drain region to avoid short channel and punchthrough problems which comprises:

(a) forming a gate electrode on a substrate;

(b) forming a shielding layer of an insulating material over the gate electrode and substrate;

(c) forming another layer of a dissimilar material over said shielding layer.

(d) anisotropically etching said layer of dissimilar material over said shielding layer to remove said layer except for spacer portions over said shielding layer adjacent the sidewalls of said gate electrode;

(e) removing the portions of said shielding layer not masked by said spacer portions, leaving one or more el-shaped shielding members each having a vertical portion against said gate electrode and a horizontal leg beneath said spacer portion extending over said substrate from said vertical portion;

(f) removing said spacer portion over said el-shaped shielding member;

(g) then implanting said substrate with a dopant material at a sufficiently high energy to penetrate through said el-shaped shielding member at a concentration low enough to form a lightly doped source/drain region in the portion of the substrate shielded by said el-shaped shielding member adjacent the region of said substrate beneath said gate electrode; and

(h) then implanting said substrate with a dopant material of the same type at a sufficiently low energy to prevent penetration of said dopant through said el-shaped shielding member and a concentration high enough to form a highly doped source/drain region in the portion of the substrate not shielded by said el-shaped shielding member or said gate electrode;

whereby said low concentration implantation will form a lightly doped source/drain region separating the channel region of the substrate beneath said gate electrode from said highly doped source/drain region.