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Merged bipolar/CMOS technology using electrically active trench

  • US 4,819,052 A
  • Filed: 12/22/1986
  • Issued: 04/04/1989
  • Est. Priority Date: 12/22/1986
  • Status: Expired due to Term
First Claim
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1. A semiconductor circuit comprising:

  • a conductive substrate of a first conductivity type material;

    first and second semiconductor areas of a second conductivity type material formed on said substrate;

    a trench separating said first and second semiconductor areas, said trench including electrically isolating sidewalls and a bottom formed in said substrate;

    a conductive material filling said trench and in electrical contact with said substrate; and

    first and second semiconductor devices formed in respective said first and second semiconductor areas.

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