Processing apparatus and method
First Claim
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1. An apparatus for processing of wafers, comprising:
- (a) a vacuum chamber;
(b) a wafer support within said vacuum chamber, said wafer support being capable of supporting a wafer;
(c) gas flow passages positioned to permit release of a desired process gas flow in proximity to the surface of the wafer;
(d) an ultraviolet energy source within said vacuum chamber separte from the wafer and positioned to illuminate the wafer with ultraviolet energy;
(e) electrodes positioned to permit generating a plasma remote from said wafer support, at least some of said gas flow passage being connected to flow the process gasses through said remote plasma electrodes; and
(f) a source of radiant energy positioned to permit illuminating the backside of the wafer.
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Abstract
A processing apparatus and method compatible with a vacuum process system for wafers, wherein an in situ source of ultraviolet light is provided to enhance chemical activity at the wafer surface, and a remote plasma source is provided in the process gas flow upstream of the wafer, to provide activated species to the wafer face, and a radiatively coupled heat source is also provided so that the wafer can be rapidly thermally cycled.
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Citations
30 Claims
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1. An apparatus for processing of wafers, comprising:
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(a) a vacuum chamber; (b) a wafer support within said vacuum chamber, said wafer support being capable of supporting a wafer; (c) gas flow passages positioned to permit release of a desired process gas flow in proximity to the surface of the wafer; (d) an ultraviolet energy source within said vacuum chamber separte from the wafer and positioned to illuminate the wafer with ultraviolet energy; (e) electrodes positioned to permit generating a plasma remote from said wafer support, at least some of said gas flow passage being connected to flow the process gasses through said remote plasma electrodes; and (f) a source of radiant energy positioned to permit illuminating the backside of the wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of processing wafers comprising;
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(a) transferring a wafer into a process chamber; (b) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (c) providing a first gas to a plasma generating module separated from said chamber and producing a remote plasma; (d) to said remote plasma; (e) illuminating the wafer with ultraviolet energy from an ultraviolet energy source within said vacuum chamber separate from the wafer; (f) illuminating the backside of the wafer with a source of radiant energy; (g) supplying an additional process gas; and (h) flowing the remote plasma and the additional process gas over said wafer disposed within said chamber.
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19. An apparatus for processing a workpiece, comprising:
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(a) a first chamber having a workpiece disposed therein; (b) a source of radiant heat coupled to the workpiece; (c) a second chamber within said first chamber having at least a pair of electrodes positioned to form a plasma within said second chamber adjacent said workpiece; and (d) a third chamber for generating ultraviolet light within said first chamber and adjacent said second chamber for illuminating said workpiece. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification