Vertical MOSFET having Schottky diode for latch-up prevention

• US 4,823,172 A
• Filed: 06/10/1987
• Issued: 04/18/1989
• Est. Priority Date: 06/17/1986
• Status: Expired due to Term

• Current Assignee: Nissan Motor Co., Ltd.
• Original Assignee: Nissan Motor Co., Ltd.
• Inventors: Mihara, Teruyoshi
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Mintel, William A.
• Application Number:
  US07/060,224
• Time in Patent Office: 678 Days
• Field of Search: 357/23.4, 357/42, 357/41, 357/86, 357/15, 357/52
• US Class Current: 257/144
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7396 with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions H01L29/7398 takes precedence
• CPC Class Codes: H01L 29/7806 the other device being a Schottky barrier diode

Abstract

In a vertical MOSFET of a conductivity modulated type or a standard type, including an n epitaxial layer grown on a p⁺ or n⁺ substrate, a p type channel region, and an n⁺ source region, there is further provided a Schottky diode which is formed between the n epitaxial layer and a metal source electrode extending through the source region and channel region and reaching the epitaxial layer under the source and channel regions in order to prevent latch-up of a parasitic thyristor.

Claims

1. A vertical MOS filed effect semiconductor device comprising:

a substrate comprising a first semiconductor layer of a first conductivity type, said substrate having a first surface formed by said first semiconductor layer, and a second surface,

a drain electrode formed on said second surface of said substrate,

a channel region of a second conductivity type opposite to said first conductivity type, formed in said first semiconductor layer,

a source region of said first conductivity type, surrounded by said semiconductor channel region,

a gate electrode formed above said channel region between said source region and said first semiconductor layer, and separated from said channel region by a gate insulating layer, and

a metal source electrode having a first portion extending into said substrate from said first surface, passing through said source region and said channel region and terminating at an innermost end which forms a first Schottky junction with said first semiconductor layer at a location remote from said first surface.

2. A semiconductor device according to claim 1 wherein said first portion of said source electrode is formed in a depression bored through said source region and said channel region.

3. A semiconductor device according to claim 2 wherein said device further comprises a highly doped semiconductor base region of said second conductivity type, formed under said source region and surrounded by said channel region, said first portion of said source electrode extending through said base region.

4. A semiconductor device according to claim 3 wherein said first portion of said source electrode is in ohmic contact with said source region and said base region.

5. A semiconductor device according to claim 4 wherein said substrate further comprises a second semiconductor layer having said second surface of said substrate.

6. A semiconductor device according to claim 5 wherein said first conductivity type is an n type, and said second conductivity type is a p type.

7. A semiconductor device according to claim 6 wherein said second semiconductor layer of said substrate is said p type.

8. A semiconductor device according to claim 6 wherein said second semiconductor layer of said substrate is said n type.

9. A semiconductor device according to claim 5 wherein said metal source electrode has a second portion which is formed on said first surface of said substrate and which forms a second Schottky junction with said first semiconductor layer of said substrate.

10. A semiconductor device according to claim 6 wherein said base region is deeper than said first Schottky junction, and surrounds said first Schottky junction.

11. A semiconductor device according to claim 2 wherein said first portion of said source electrode is in ohmic contact with said source region and said channel region.

12. A semiconductor device according to claim 11 wherein said channel region comprises a highly doped semiconductor base region of said second conductivity type, formed under said source region, and a lightly doped peripheral region surrounding said source and base regions, said first portion of said source electrode extending through said base region.

13. A semiconductor device according to claim 12 wherein said first portion of said source electrode is in ohmic contact with said base region.

14. A semiconductor device according to claim 5 wherein said first semiconductor layer is formed on said second semiconductor layer, and has an impurity concentration lower than that of said second layer.

15. A semiconductor device according to claim 14, wherein said first semiconductor layer is an epitaxial layer grown on said second semiconductor layer.