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Vertical MOSFET having Schottky diode for latch-up prevention

  • US 4,823,172 A
  • Filed: 06/10/1987
  • Issued: 04/18/1989
  • Est. Priority Date: 06/17/1986
  • Status: Expired due to Term
First Claim
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1. A vertical MOS filed effect semiconductor device comprising:

  • a substrate comprising a first semiconductor layer of a first conductivity type, said substrate having a first surface formed by said first semiconductor layer, and a second surface,a drain electrode formed on said second surface of said substrate,a channel region of a second conductivity type opposite to said first conductivity type, formed in said first semiconductor layer,a source region of said first conductivity type, surrounded by said semiconductor channel region,a gate electrode formed above said channel region between said source region and said first semiconductor layer, and separated from said channel region by a gate insulating layer, anda metal source electrode having a first portion extending into said substrate from said first surface, passing through said source region and said channel region and terminating at an innermost end which forms a first Schottky junction with said first semiconductor layer at a location remote from said first surface.

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