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Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area

  • US 4,823,176 A
  • Filed: 04/03/1987
  • Issued: 04/18/1989
  • Est. Priority Date: 04/03/1987
  • Status: Expired due to Term
First Claim
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1. A semiconductor field effect device comprising:

  • a body of semiconductor material having a major surface; and

    an insulated gate electrode grid disposed on said major surface, said grid comprising;

    as plurality of spaced apart first gate segments, each of said first segments being substantially circular, anda plurality of second gate segments, each of said second segments extending between, and interconnecting, two adjacent one s of said first segments.

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