Semiconductor laser with a variable oscillation wavelength
First Claim
1. A semiconductor laser comprising:
- a first cladding layer of a first conductivity type,at least one a quantum well active layer provided over said first cladding layer,a second cladding layer of a second conductivity type provided over said at least one active layer,resonator facets including a pair of planes approximately orthogonal to the layer structure of said first cladding layer, said at least one active layer, and said second cladding layer,two exclusive electrodes in ohmic contact with said second cladding layer and positioned separately in an axial direction of a resonator composed of said resonator facets, anda common electrode in ohmic contact with said first cladding layer and facing said exclusive electrodes.
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Accused Products
Abstract
An improved semiconductor laser comprises an active region of quantum well, at least two cladding layers positioned at both sides of said active region, and two electrodes provided separately at one side of at least one cladding layer of said at least two cladding layers so that a laser oscillation is produced in a wide wavelength range and high response rate for the reason why the wavelength of a laser oscillation can be changed in wavelengths in the vicinity of transition energy Eke-HH between n=k electron quantum and n=k heavy hole quantum level (k=1, 2, 3 - - - ) in accordance with the control of current to be injected from one electrode of said two electrodes or voltage to be applied to said one electrode.
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Citations
5 Claims
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1. A semiconductor laser comprising:
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a first cladding layer of a first conductivity type, at least one a quantum well active layer provided over said first cladding layer, a second cladding layer of a second conductivity type provided over said at least one active layer, resonator facets including a pair of planes approximately orthogonal to the layer structure of said first cladding layer, said at least one active layer, and said second cladding layer, two exclusive electrodes in ohmic contact with said second cladding layer and positioned separately in an axial direction of a resonator composed of said resonator facets, and a common electrode in ohmic contact with said first cladding layer and facing said exclusive electrodes. - View Dependent Claims (2, 3, 4, 5)
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Specification