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Semiconductor laser with a variable oscillation wavelength

  • US 4,823,352 A
  • Filed: 02/13/1987
  • Issued: 04/18/1989
  • Est. Priority Date: 02/14/1986
  • Status: Expired due to Fees
First Claim
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1. A semiconductor laser comprising:

  • a first cladding layer of a first conductivity type,at least one a quantum well active layer provided over said first cladding layer,a second cladding layer of a second conductivity type provided over said at least one active layer,resonator facets including a pair of planes approximately orthogonal to the layer structure of said first cladding layer, said at least one active layer, and said second cladding layer,two exclusive electrodes in ohmic contact with said second cladding layer and positioned separately in an axial direction of a resonator composed of said resonator facets, anda common electrode in ohmic contact with said first cladding layer and facing said exclusive electrodes.

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