Trench isolation process and structure
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate having a major surface;
a trench extending into said substrate from said major surface wherein said trench has a sidewall and a bottom;
a silicon oxide-silicon nitride mixture substantially filling said trench to a first surface below said major surface; and
a silicon nitride layer completely covering said mixture.
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Abstract
A structure and method for forming an isolation wall in an etched trench are described. The trench walls are covered by a thin silicon oxide layer and the trench conformally filled with an oxy-nitride mixture having a particular range of composition so as to produce a neutral to slight tensile stress in the oxy-nitride relative to silicon. The structure is very simple to fabricate and creates fewer defects in the silicon substrate than prior art techniques. Buried voids in the filled trench are eliminated.
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Citations
11 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having a major surface; a trench extending into said substrate from said major surface wherein said trench has a sidewall and a bottom; a silicon oxide-silicon nitride mixture substantially filling said trench to a first surface below said major surface; and a silicon nitride layer completely covering said mixture. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a substrate comprising a semiconductor body; a trench extending into said body; a silicon oxy-nitride mixture in said trench; and a silicon nitride layer completely covering said silicon oxy-nitride mixture in said trench.
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Specification