Differential capacitive transducer and method of making

• US 4,825,335 A
• Filed: 03/14/1988
• Issued: 04/25/1989
• Est. Priority Date: 03/14/1988
• Status: Expired due to Term

• Current Assignee: Endevco Corporation (Illinois Tool Works Inc.)
• Original Assignee: Endevco Corporation (Illinois Tool Works Inc.)
• Inventors: Wilner, Leslie B.
• Primary Examiner(s): Griffin, Donald
• Application Number:
  US07/167,936
• Time in Patent Office: 407 Days
• Field of Search: 338/4, 73/718, 73/724, 29/25.42, 361/283
• US Class Current: 361/283.3
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: Y10T 29/435 Solid dielectric type

Abstract

A differential variable capacitance acceleration sensor includes a sandwich structure having three stacked plates of silicon with the center plate mounted such that its center portion is enabled to move in a sealed cavity with each side thereof moving toward and away from a fixed cooperating plate forming the opposite side of a capacitive circuit. The center portion or mass of the center plate is suspended from its rim by means of a large number of integral fingers extending from the rim to the top and bottom surfaces of the center portion. This center mass includes a number of through holes to permit the passage of air from one side to the other and may also include grooves to aid in the flow of air. The fixed top plate or lid and the base also have, or may have, grooves to assist in the passage of air. An alternative embodiment includes a smaller number of more compliant fingers to provide a more compliant structure. A number of spaced stops are provided in the lid and base to overcome electrostatic and pneumatic latch up. The method of forming the individual parts is also taught.

Claims

1. A differential variable capacitance transducer including a laminate of three layers, an inner plate layer, a first outer plate layer and a second outer layer of substantially the same size;

said inner plate layer being essentially of monocrystalline silicon, and said outer layers being of material having thermal expansion properties substantially the same as silicon;

a rim forming the periphery of each of said outer plate layers, said rim having a borosilicate glass inlay bonded thereto to insulate said inner plate layer from said first and second outer layers;

a central seismic mass on said inner plate forming the moving capacitive plate of said transducer and having a first and a second face, said mass spaced on each side edge from said rim;

a large number of leaf springs which are atomically continuous with said mass extending from both top and bottom edges of said mass to top and bottom edges of said rim, said seismic mass being supported on said leaf springs for movement in a plane normal to the plane of said plate;

a plurality of holes formed in said seismic mass forming fluid communication between said first and second faces of said mass;

a plurality of grooves formed in at least one of said seismic mass and said opposed surfaces of said first and second outer plate layers extending from near at least some of said holes to points spaced from said holes;

said outer layers and said rim forming a cavity for said seismic mass and a gas in said cavity; and

cooperating electrical contact means on said plate and said outer layers for transmitting the output of said transducer.

2. A capacitive transducer as claimed in claim 1 further including a plurality of spaced dielectric projections extending from opposing faces of said outer plate layers for engaging said seismic mass.

3. A differential variable capacitance transducer as claimed in claim 1 wherein one of said outer plates includes a first electrical contact member communicating with the silicon material thereof and a second electrical contact member on said borosilicate glass rim insulated from the silicon material of said one outer plate, and said rim of said inner plate includes spaced contact members in contact with said second electrical contact member.

4. A differential variable capacitance transducer as claimed in claim 1 wherein said central mass includes a plurality of grooves communicating with said holes.

5. A differential variable capacitance transducer as claimed in claim 1 wherein said grooves are formed in the opposed surfaces of said outer plate layers.

6. A differential variable capacitance transducer as claimed in claim 1 wherein the one of said outer plate layers includes an electrical contact member and corners which are etched away to the level of said inlay of borosilicate glass.

7. A differential variable capacitance transducer as claimed in claim 1 wherein a plurality of dielectric stop members are formed in the opposing surfaces of said outer plate layers, said stop members extending above said surfaces an amount which is greater than the height of said borosilicate glass rims.

8. A differential variable capacitance transducer as claimed in claim 7 wherein said stop spots are inlays of borosilicate glass.

9. A differential variable capacitance transducer as claimed in claim 8 wherein the contact spots on said control seismic mass are oxide coated to prevent anodic bonding to said stop spots.

10. A differential variable capacitance transducer including a laminate of three layers, an inner plate layer, a first outer plate layer and a second outer layer of substantially the same size;

said layers comprising plates formed essentially of monocrystalline silicon;

said inner plate layer including a rim and a central seismic mass forming the moving capacitive plate of said transducer having a first and a second face, said mass being spaced from said rim;

a large number of leaf springs which are atomically continuous with said mass extending from both top and bottom edges of said mass to top and bottom edges of said rim, said seismic mass being supported on said leaf springs for movement in a plane normal to the plane of said plate;

a plurality of holes formed in said seismic mass forming fluid communication between said first and second faces of said mass;

a plurality of grooves formed in said layers extending from near at least some of said holes to points spaced from said holes;

said outer layers and said rim forming a cavity for said seismic mass and a gas in said cavity, said outer layers each having a rim of borosilicate glass insulating said outer layers from the rim of said inner plate layer; and

cooperating electrical contact means on said plate and said outer layers for transmitting the output of said transducer.

11. A differential variable capacitance transducer as claimed in claim 10 wherein said leaf springs are formed substantially wider at their inner end where they are connected to said seismic mass than at their outer end.

12. A differential variable capacitance transducer as claimed in claim 10 wherein said leaf springs comprise a plurality of narrow members of substantially uniform width extending at an angle from each side edge of said seismic mass to the top and bottom edges of said inner plate rim.

13. A differential variable capacitance transducer as claimed in claim 10 wherein said central mass includes a plurality of grooves communicating with said holes.

14. A differential variable capacitance transducer as claimed in claim 10 wherein said grooves are formed in the opposed surfaces of said outer plate layers.

15. A differential variable capacitance transducer as claimed in claim 10 wherein the dimensions of said grooves and said holes are controlled to control the frequency response of said transducer.

16. A differential variable capacitance transducer as claimed in claim 10 wherein a plurality of dielectric stop members are formed in the opposing surfaces of said outer plate layers, said stop members extending above said surfaces an amount which is greater than the height of said borosilicate glass rims.

17. A differential variable capacitance transducer characterized by:

(a) a laminate comprised of three layers, an inner plate layer, a first outer layer and a second outer layer of substantially the same size;

(b) each of said three layers comprised of monocrystalline silicon;

(c) each of said first and second outer layers insulated from said inner plate layer;

(d) a rim forming the periphery of said inner plate;

(e) each of said outer layers joined and sealed at the periphery thereof to one side of said plate rim;

(f) a central seismic mass on said plate forming the movable capacitive plate of said apparatus and having a first and a second face, and said mass spaced on each side edge from said rim;

(g) a large number of leaf springs which are atomically continuous with said mass extending from both top and bottom edges of said mass to top and bottom edges of said rim, said mass being supported on said leaf springs for movement in a plane normal to the plane of said inner plate;

(h) at least one hole formed in said seismic mass for forming fluid communication between said first and second face of said mass;

(i) a plurality of grooves formed in said first and second outer plate layers, said grooves extending from near said hole to points spaced from said hole;

(j) said outer layers and said rim forming a cavity for containing a gas therein; and

(k) cooperating electrical contact means on said plate and at least one of said outer layers for transmitting the measured stimuli of said apparatus.

18. A differential variable capacitance transducer as claimed in claim 17 wherein each of said outer plates includes a rim of inlaid borosilicate glass providing physical contact with the rim of said inner plate but electrically insulating said inner plate from said outer plates.

19. A differential variable capacitance transducer as claimed in claim 17 wherein a plurality of dielectric stop members are formed in opposing surfaces of each of said outer plate layers, said stop members extending toward each face of said movable capacitive plates.

20. A process for producing a differential variable capacitance transducer comprising the steps of:

(1) selecting an inner plate layer, a lid layer and a base layer of P-type monocrystalline silicon;

(2) polishing and oxide coating both sides of said inner and lid layers and one side of said base layer;

(3) protecting the desired pattern on both sides of said inner layer with photo-resist material and etching both sides to a desired depth;

(4) stripping the oxide, reoxidizing and re-etching both sides of said inner layer;

(5) depositing on both sides of said inner layer a dopant of boron to an etch resistant depth of a least approximately 2.4 microns;

(6) removing doping oxide from said inner layer, reoxidizing said inner layer and protecting both sides with positive photo-resist material in a desired pattern;

(7) protecting both sides with a mask and etching through the oxide layer to a depth at least approximately three microns into the silicon;

(8) etching selectively for both orientation and doping entirely through parts of said inner layer not protected by boron or mask to form fingers suspending a central mass from the rim of said inner plate;

(9) protecting both sides of said lid with photo-resist material and etching and acid etching on the side to be adjacent said inner layer;

(10) stripping the oxide, reoxidizing and depositing borosilicate glass where etched on said lid on the side to be adjacent said inner layer;

(11) protecting the opposite side of said lid with photo-resist material in a desired pattern and etching deep leaving approximately 1.5 mil silicon;

(12) polishing the borosilicate glass and silicon side of said lid to a smooth surface, cleaning and evaporating an aluminum layer, protecting with a positive photo-resist and masking as desired;

(13) etching through said aluminum layer as desired;

(14) protecting said borosilicate glass and stripping oxide and aluminum from the opposite side of said lid;

(15) depositing through a mask on the borosilicate glass side of said lid a layer of SiO₂ and heat to 520 degrees C. for appxoimately 20 minutes;

(16) depositing a layer of aluminum on the top side of said lid to provide electrical connections;

(17) applying a photo-resist material to the top side, patterning said aluminum layer and heating to bond said aluminum layer to said silicon;

(18) applying photo-resist to the upper side of said base through a mask, protecting the back side, and etching the top side;

(19) acid etching to a significant depth such as two mils and stripping oxide from both sides of said base;

(20) applying a heavy coat of oxide and depositing borosilicate glass on the top side of said base;

(21) etching the oxide from the back and polishing the borosilicate glass and silicon to provide a smooth surface;

(22) depositing a layer of SiO₂ through a mask and heating said base at approximately 520 degrees C. for about 20 minutes;

(23) cleaning and evaporating aluminum through a mask, as desired, for electrical contacts and heating said base to bond said aluminum;

(24) and bonding said layers together.

21. A process for producing a differential variable capacitance transducer as claimed in claim 20 including etching through said inner layer to form throughholes therein during the same etching step wherein said fingers are formed.

22. A process for producing a differential variable capacitance transducer as claimed in claim 21 wherein following step (12) said etching step etches through said aluminum layer to form grooves in said lid communicating with said throughholes.

23. A process for producing a differential variable capacitance transducer as claimed in claim 20 wherein following step (9) the side of said lid opposite said inner layer is subjected to a dopant of boron.

24. A process for producing a differential variable capacitance transducer as claimed in claim 20 wherein following step (20) a layer of aluminum is deposited on the side of said base having the borosilicate glass layer and said base is subjected to an etching step to form grooves in said base communicating with said throughholes.

25. A process for producing a differential variable capacitance transducer as claimed in claim 20 wherein the bonding step (23) comprises anodic bonding.