Low temperature deep ultraviolet resist hardening process using zenon chloride laser

• US 4,826,756 A
• Filed: 07/01/1987
• Issued: 05/02/1989
• Est. Priority Date: 07/01/1987
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Orvek, Kevin J.
• Primary Examiner(s): Michl, Paul R.
• Assistant Examiner(s): Doody, Patrick A.
• Application Number:
  US07/069,333
• Time in Patent Office: 671 Days
• Field of Search: 430/297, 430/328, 430/330, 430/325, 430/311, 430/945, 528/480, 528/502, 522/2
• US Class Current: 430/328
• CPC Class Codes: G03F 7/2024 of the already developed image
• CPC Class Codes: Y10S 430/146 Laser beam

Abstract

The disclosure relates to a method for low temperature (less than 120 degrees C.) hardening of photoresist pattern by providing a high power light beam consisting of light having a wavelength of about 300 nanometers and above which leads to crosslinking throughout the resist. A hot plate constant temperature (less than 120 degrees C.) is optionally used to accelerate the crosslinking reaction, thus incrasing throughput.

Claims

1. A method of hardening a phenolic resin, comprising the steps of:

(a) providing a patterned layer comprising phenolic resin;

(b) directing a substantially coherent light beam consisting essentially of light having a wavelength greater than about 300 nanometers and less than 320 nanometers through said resin to crosslink all of said resin;

while

(c) heating said layer to a temperature above ambient temperature and less than about 120 degrees Centigrade.

2. The method of claim 1 wherein said light beam is provided by a laser and has a wavelength of substantially 308 nanometers.

3. The method of claim 1 wherein said resin is disposed on a semiconductor substrate.

4. The method of claim 2 wherein said resin is disposed on a semiconductor substrate.

5. The method of claim 1 wherein said resin is disposed on a semiconductor substrate.

6. The method of claim 2 wherein said resin is disposed on a semiconductor substrate.

7. The method of claim 3 wherein said resin is in a photoresist.

8. The method of claim 4 wherein said resin is in a photoresist.

9. The method of claim 5 wherein said resin is in a photoresist.

10. The method of claim 6 wherein said resin is in a photoresist.

11. The method of claim 7 wherein step (b) includes providing a mirror system to direct said light beam onto said resin.

12. The method of claim 8 wherein step (b) includes providing a mirror system to direct said light beam onto said resin.

13. The method of claim 9 wherein step (b) includes providing a mirro system to direct said light beam onto said resin.

14. The method of claim 10 wherein step (b) includes providing a mirro system to direct said light beam onto said resin.

15. The method of claim 11 wherein said mirror system includes a beam homogenizer and beam expander.

16. The method of claim 12 wherein said mirro system includes a beam homogenizer and beam expander.

17. The method of claim 13 wherein said mirro system includes a beam homogenizer and beam expander.

18. The method of claim 14 wherein said mirro system includes a beam homogenizer and beam expander.