Chemical vapor deposition system

• US 4,828,224 A
• Filed: 10/15/1987
• Issued: 05/09/1989
• Est. Priority Date: 10/15/1987
• Status: Expired due to Term

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: Epsilon Technology Incorporated (ASM International NV)
• Inventors: Goodwin, Dennis L., Hawkins, Mark R., Crabb, Richard, Robinson, McDonald, deBoer, Wiebe B., Ozias, Albert E., Ferro, Armand P.
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US07/108,771
• Time in Patent Office: 572 Days
• Field of Search: 118/715, 118/719, 414/217, 251/298, 251/303, 251/326
• US Class Current: 251/298
• CPC Class Codes: C30B 25/10 Heating of the reaction chamber or the substrate
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: Y10S 414/137 including means for charging or discharging wafer cassette
• CPC Class Codes: Y10S 414/139 including wafer charging or discharging means for vacuum chamber

Abstract

This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.

Claims

1. An isolation valve for selective opening and closing of a passage formed in a vertical wall through which workpieces are passable, said isolation valve comprising:

(a) a valve body for mounting proximate the vertical wall and having an opposed pair of surfaces and an opposed pair of side edges, said valve body having an open port formed to extend between the opposed pair of surfaces at a location intermediate the pair of side edges thereof;

(b) said valve body having one of it'"'"'s pair of side edges disposed at an acute angle with respect to the open port thereof;

(c) means for journaling said valve body for rotation about an axis that is parallel to the vertical wall when said valve body is mounted proximate thereto; and

(d) means coupled to said valve body for rotatable movement thereof from a first position wherein the angularly disposed side edge of said valve body is in engagement with the vertical wall for closing the passage thereof and a second position wherein the angularly disposed side edge of said valve body is out of engagement with the vertical wall for opening the passage thereof and the open port of said valve body is aligned with the passage of the vertical wall so that the workpieces may be moved through the open passage of said valve body and the passage of the vertical wall.

2. An isolation valve as claimed in claim 1 and further comprising seal means on the angularly disposed side edge of said valve body for hermetically sealing the passage of the vertical wall when said valve body is in the first position thereof.