Production of photoelectric conversion film and contact type image sensor

• US 4,828,876 A
• Filed: 02/04/1986
• Issued: 05/09/1989
• Est. Priority Date: 02/06/1985
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kita, Ryusuke, Ohhara, Soji, Nishigaki, Satoshi, Tsuchimoto, Shuhei
• Primary Examiner(s): Morgenstern, Norman
• Assistant Examiner(s): PADGETT, MARIANNE L
• Application Number:
  US06/825,925
• Time in Patent Office: 1,190 Days
• Field of Search: 427/74-76
• US Class Current: 427/76
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/1828 the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
• CPC Class Codes: H01L 31/1832 comprising ternary compounds, e.g. Hg Cd Te
• CPC Class Codes: Y02E 10/543 Solar cells from Group II-VI materials

Abstract

A process for preparing a photoelectric conversion film containing one or more compound semiconductor made from Cd and group Vi element comprises coating a paste containing (a) a photoelectric conversion material, (b) a dopant, (c) a flux, (d) an organic binder, and optionally (e) a glass frit on a substrate, and sintering it at 300° C.-800° C. in an inert gas blanket.

Claims

1. A process for preparing a photoelectric conversion film used for a contact type image sensor, said film containing one or more semiconductor compounds made from Cd and a group VI element, comprising the steps of:

forming a paste by mixing

(a) photoelectric conversion material containing Cd and a group VI element,

(b) a dopant,

(c) a flux, and

(d) an organic binder selected from the group consisting of ethylene glycol, ethyl cellulose, alpha-terpineol and a mixture thereof;

coating said paste on a substrate; and

heating the coated substrate at 300°

C. to 800°

C. in an inert gas blanket.

2. The process of claim 1 wherein the photoelectric conversion material is CdSe compound particles.

3. The process of claim 2 wherein the photoelectric conversion material is subjected to a pretreatment for activation.

4. The process of claim 3 wherein the pretreatment is a heating treatment at 600°

C. to 800°

C. for 30 to 60 minutes.

5. The process of claim 1 wherein the paste additionally contains (e) a glass frit having low melting temperature.

6. The process of claim 1 wherein the dopant is selected from the group consisting of CuCl₂, AgCl₂ and AlCl₂.

7. The process of claim 1 wherein the flux is CdCl₂.

8. The process of claim 5 wherein the melting point of the glass frit is from 300°

C. to 450°

C.

9. The process of claim 1 wherein the inert gas is N₂ gas.

10. A process for preparing a contact type image sensor comprising the steps of:

preparing a photoelectric conversion film including the steps of;

(a) forming a paste mixing

(i) photoelectric conversion material containing Cd and a group VI element,

(ii) a dopant,

(iii) a flux, and

(iv) an organic binder selected from the group consisting of ethylene glycol, ethyl cellulose, alpha-terpineol, and a mixture thereof;

(b) coating the paste on a substrate; and

(c) heating the coated substrate at 300°

C. to 800°

C. in an inert gas blanket; and

using said photoelectric conversion film in a contact image sensor.

11. The process of claim 10 wherein the photoelectric conversion material is CdSe compound particles.

12. The process of claim 11 wherein the photoelectric conversion material is subjected to a pretreatment for activation.

13. The process of claim 12 wherein the pretreatment is a heating treatment at 600°

C. to 800°

C. for 30 to 60 minutes.

14. The process of claim 10 wherein the paste additionally contains (v) a glass frit having a low melting temperature.

15. The process of claim 10 wherein the dopant is selected from the group consisting of CuCl₂, AgCl₂ and AlCl₂.

16. The process of claim 10 wherein the flux is CdCl₂.

17. The process of claim 14 wherein the melting point of the glass frit is from 300°

C. to 450°

C.

18. The process of claim 10 wherein the inert gas is N₂ gas.