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Production of photoelectric conversion film and contact type image sensor

  • US 4,828,876 A
  • Filed: 02/04/1986
  • Issued: 05/09/1989
  • Est. Priority Date: 02/06/1985
  • Status: Expired due to Term
First Claim
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1. A process for preparing a photoelectric conversion film used for a contact type image sensor, said film containing one or more semiconductor compounds made from Cd and a group VI element, comprising the steps of:

  • forming a paste by mixing(a) photoelectric conversion material containing Cd and a group VI element,(b) a dopant,(c) a flux, and(d) an organic binder selected from the group consisting of ethylene glycol, ethyl cellulose, alpha-terpineol and a mixture thereof;

    coating said paste on a substrate; and

    heating the coated substrate at 300°

    C. to 800°

    C. in an inert gas blanket.

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