Electrophotographic photoreceptor comprising amorphous silicon and amorphous carbon buffer layer

• US 4,833,055 A
• Filed: 06/04/1987
• Issued: 05/23/1989
• Est. Priority Date: 06/13/1986
• Status: Expired due to Fees

• Current Assignee: Fuji Electric Company Limited 1-1 Tanabeshinden Kawasaki-Ku Kawasaki-Shi Kanagawa Japan
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: Aizawa, Koichi, Hara, Kenichi, Iijima, Toshiyuki, Takano, Yukio, Kazama, Toyoki
• Primary Examiner(s): Welsh, J. David
• Application Number:
  US07/058,245
• Time in Patent Office: 719 Days
• Field of Search: 430/66, 430/67, 430/128, 430/132
• US Class Current: 430/66
• CPC Class Codes: G03G 5/08221 comprising one or two silicon based layers
• CPC Class Codes: G03G 5/08285 Carbon-based in ad mixture with Si G03G5/08214

Abstract

An electrophotographic photoreceptor comprises a conductive base, a photoconductive layer formed of amophous silicon on the conductive base, a buffer layer on the photoconductive layer, and a surface layer covering the photoconductive layer through the buffer layer, wherein the buffer layer is formed of amorphous carbon.

Claims

1. An electrophotographic photoreceptor, comprising:

a conductive base;

a photoconductive layer formed of amorphous silicon over said conductive base;

a buffer layer on said photoconductive layer; and

a surface layer on said buffer layer covering said photoconductive layer over said buffer layer

wherein said buffer layer consists essentially of amorphous carbon.

2. An electrophotographic photoreceptor as claimed in claim 1, wherein said surface layer includes amorphous carbon.

3. An electrophotographic photoreceptor as claimed in claim 1, further comprising a blocking layer between said conductive base and said photoconductive layer.

4. A method of manufacturing an electrophotographic photoreceptor, comprising the steps of:

forming a photoconductive layer of amorphous silicon photoconductive layer over a conductive base;

subjecting the photoconductive layer to a material gas for forming an amorphous carbon buffer layer; and

subjecting the buffer layer to a gas having the same material as the buffer layer forming a surface layer on said buffer layer.

5. A method according to claim 4 including the step of forming a blocking layer between said conductive base and said photoconductive layer.

6. A method according to claim 4 wherein said material gas is a mixture of gas selected from the group consisting of C₂ H₂, CH₄, C₂ H₆, C₃ H₈, C₂ H₂ with one of hydrogen or oxygen gas.