Temperature compensated Hall-effect sensor apparatus

• US 4,833,406 A
• Filed: 04/17/1986
• Issued: 05/23/1989
• Est. Priority Date: 04/17/1986
• Status: Expired due to Term

• Current Assignee: Optek Technology Incorporated (TT Electronics PLC)
• Original Assignee: Household Commercial Financial Services, Inc. (HSBC Holdings plc)
• Inventors: Foster, Johnny R.
• Primary Examiner(s): Eisenzopf, Reinhard J.
• Assistant Examiner(s): Snow, Walter E.
• Application Number:
  US06/854,062
• Time in Patent Office: 1,132 Days
• Field of Search: 324/224, 324/225, 324/252, 338/32 H, 307/309, 323/368
• US Class Current: 324/225
• CPC Class Codes: G01D 3/032 affecting incoming signal, e.g. by averaging; gating undesired signals
• CPC Class Codes: G01D 5/142 using Hall-effect devices measuring magnetic variables using Hall-effect or other galvanomagnetic devices G01R33/06
• CPC Class Codes: G01P 1/006 used for thermal compensation
• CPC Class Codes: G01R 33/0029 Treating the measured signals, e.g. removing offset or noise
• CPC Class Codes: G01R 33/0035 Calibration of single magnetic sensors, e.g. integrated calibration
• CPC Class Codes: G01R 33/0082 Compensation, e.g. compensating for temperature changes
• CPC Class Codes: G01R 33/07 Hall effect devices

Abstract

A temperature compensated Hall-effect sensor apparatus is disclosed which senses the position of a moving body and provides an output signal indicative of the position of the moving body. The apparatus includes a Hall device which senses the application and subsequent removal of a magnetic field and provides an output signal to a constant gain amplifier. Circuitry is provided in the constant gain amplifier for adjusting the gain of the amplifier and also for nulling-out any offset voltage received from the Hall device. The output of the constant gain amplifier is input to a sensitivity compensation and hysteresis circuit for setting a positive-going threshold trip level and a negative-going threshold trip level into a comparator. Circuitry is included which provides both the positive-going and the negative-going threshold trip levels with temperature compensation such that the effective positive and negative trip levels of the comparator remain the same for a given magnetic field and are independent of the temperature of or the signal level out of the Hall device as affected by temperature. Circuitry is provided to change the amount of hysteresis such that the negative-going threshold trip level is a predetermined percentage of the positive-going threshold trip level. The apparatus has a fixed hysteresis ratio.

Claims

1. A Hall-effect sensor for producing an electrical signal corresponding to magnetic flux density, comprising:

a Hall-effect element having bias electrodes for supply of bias voltage to the Hall-effect element and output electrodes at which an output voltage is produced, the output voltage having an offset voltage component and a signal voltage component;

voltage regulator means having a pair of output terminals connected to the bias electrodes and operative for supplying a regulated voltage to the bias electrodes, the regulated voltage being maintained at a substantially constant value independent of load and ambient temperature variations, thereby producing an offset voltage component that is substantially constant and independent of variations in ambient temperature and a sensitivity ratio between the signal voltage component and the magnetic flux density that is decreasing function of temperature, the voltage regulator means including a band gap regulator for supplying the regulated voltage to the bias electrodes; and

a measuring circuit including amplifier means having an input coupled to the output electrodes, wherein the amplifier means includes;

a differential amplifier having a gain that decreases as a function of temperature, the differential amplifier including first and second transistors having input electrodes connected to the output electrodes of the Hall-effect element and first and second resistors connected in series with the first and second transistors;

and

gain compensation means to increase the amplification of the amplifier means, thereby compensating for the gain reduction of the differential amplifier as a function of temperature and providing an amplifier gain that is substantially independent of variations in temperature, the gain compensation means including a third transistor having an input electrode to which the regulated voltage is applied and a third resistor in series with the third transistor, the third transistor being arranged for control of current through both the first and second transistors;

wherein the first and second resistors can be adjusted relative to each other to null out the voltage offset of the Hall-effect element and the third resistor can be adjusted to provide a desired sensitivity ratio between the between the signal voltage component and the magnetic flux density.

2. A Hall-effect sensor for producing an electrical signal corresponding to magnetic flux density, comprising:

a Hall-effect element having bias electrodes for supply of bias voltage to the Hall-effect element and output electrodes at which an output voltage is produced, the output voltage having an offset voltage component and a signal voltage component;

voltage regulator means having a pair of output terminals connected to the bias electrodes and operative for supplying a regulated voltage to the bias electrodes, the regulated voltage being maintained at a substantially constant value independent of load and ambient temperature variations, thereby producing an offset voltage component that is substantially constant and independent of variations in ambient temperature and a sensitivity ratio between the signal voltage component and the magnetic flux density that is a decreasing function of temperature; and

a differential amplifier including first and second transistors having input electrodes connected to the output electrodes of the Hall-effect element, a third transistor connected in series with the first and second transistors to control the total current through the first and second transistors, and conductance control means for control of the third transistor to obtain an amplifier gain that is substantially independent of changes in ambient temperature;

wherein the conductance control means includes a resistor that can be adjusted to provide a desired sensitivity ratio between the signal voltage component and the magnetic flux density, a fourth transistor having a base-emitter junction in parallel with the base-emitter junction of the third transistor, a fifth transistor for supplying current to the parallel-connected base-emitter junctions of the third and fourth transistors, a sixth transistor having a base-emitter junction in parallel with the base-emitter junction of the fifth transistor, and a seventh transistor and having a control electrode to which the regulated voltage is applied, each of the first, second, fifth and sixth transistor being of one conductive type and each of the third, fourth and seventh transistors being of a conductive type that is complementary to the one conductive type;

and wherein the resistor is connected in series with the seventh transistor.

3. The Hall-effect sensor as defined in claim 2, and further including a pair of resistors connected in series with the first and second transistors that can be adjusted to compensate for the offset voltage of the Hall-effect element.

4. The Hall-effect sensor as defined in claim 3, wherein the Hall-effect element and the transistors are of the same epitaxial semiconductor material.

5. The Hall-effect sensor as defined in claim 3, wherein the resistors are external thick film resistors, each resistor having a resistance that is substantially independent of variations of temperature.

6. The Hall-effect sensor as defined in claim 3, wherein the resistors are laser-trimmed to provide the offset voltage compensation and sensitivity ratio adjustment.

7. A Hall-effect sensor for producing an electrical signal corresponding to magnetic flux density, comprising:

a Hall-effect element having bias electrodes for supply of bias voltage to the Hall-effect element and output electrodes at which an output voltage is produced, the output voltage having an offset voltage component and a signal voltage component;

voltage regulator means having a pair of output terminals connected to the bias electrodes and operative for supplying a regulated voltage to the bias electrodes, the regulated voltage being maintained at a substantially constant value independent of load and ambient temperature variations, thereby producing an offset voltage component that is substantially constant and independent of variations in ambient temperature and a sensitivity ratio between the signal voltage component and the magnetic flux density that is decreasing function of temperature; and

a measuring circuit connected to the output electrodes, the measuring circuit including a comparator having a pair of input terminals, amplifier means for amplifiying signals developed at the output electrodes and applying the amplified signals to the input terminals of the comparator, a resistor connected in series with one of the input terminals of the comparator, shunt transistor means coupled in a shunt relationship with the input terminals of the comparator, the comparator being switched from a first state to a second state at a positive trip level that is a function of the resistance value of the resistor, and control means coupled to the output of the comparator and arranged to control the shunt transistor means to provide hysteresis with the comparator being switched from the second state to the first state at a desired negative trip level.

8. The Hall-effect sensor as defined in claim 7, wherein the control means includes adjustment means to adjust the level of conduction of the shunt transistor means to adjust the ratio of the negative trip level to the positive trip level.

9. The Hall-effect sensor as defined in claim 8, wherein the adjustment means includes a number of connections that are selectively chosen to adjust the ratio in discrete steps.

10. The Hall-effect sensor as defined in claim 8, wherein the adjustment means includes current source means having a number of connections that are selectively chosen for supplying current to the control transistor means in accordance with the number of connections.

11. The Hall-effect sensor as defined in claim 10, wherein the current source means includes multi-collector transistor means.

12. The Hall-effect sensor as defined in claim 10, and further including compensation means for controlling the current source means as a function of temperature, thereby compensating for the decreasing function of temperature of the sensitivity ratio between the signal voltage component and the magnetic flux density.

13. The Hall-effect sensor for producing an electrical signal corresponding to magnetic flux density, comprising:

a Hall-effect element having bias electrodes for supply of bias voltage to the Hall-effect element and output electrodes at which an output voltage is produced, the output voltage having an offset voltage component and a signal voltage component;

voltage regulator means having a pair of output terminals connected to the bias electrodes and operative for supplying a regulated voltage to the bias electrodes, the regulated voltage being maintained at a substantially constant value independent of load and ambient temperature variations, thereby producing an offset voltage component that is substantially constant and independent of variations in ambient temperature and a sensitivity ratio between the signal voltage component and the magnetic flux density that is a decreasing function of temperature; and

amplifier means having offset voltage compensation means for compensating for the offset voltage of the Hall-effect element, the amplifier means including a pair of transistors having input electrodes connected to the output electrodes of the Hall-effect element and a pair of resistors connected in series with the transistors, the resistance values of the resistors being adjustable relative to each other to provide the offset voltage compensation.

14. The Hall-effect sensor as defined in claim 13, wherein at least one of the resistors is laser-trimmed to provide the offset voltage compensation.

15. The Hall-effect sensor as defined in claim 14, wherein the resistors are external thick film resistors, each resistor having a resistor value that is substantially independent of variations in ambient temperature.

16. A Hall-effect sensor for producing an electrical signal corresponding to magnetic flux density, comprising:

a Hall-effect element having bias electrodes for supply of bias voltage to the Hall-effect element and output electrodes at which an output voltage is produced, the output voltage having an offset voltage component and a signal voltage component;

voltage regulator means having a pair of output terminals connected to the bias electrodes and operative for supplying a regulated voltage to the bias electrodes, the regulated voltage being maintained at a substantially constant value independent of load and ambient temperature variations, thereby producing an offset voltage component that is substantially constant and independent of variations in ambient temperature and a sensitivity ratio between the signal voltage component and the magnetic flux density that is a decreasing function of temperature; and

a differential amplifier including first and second transistors having input electrodes connected to the output electrodes of the Hall-effect element, a third transistor connected in series with the first and second transistors to control the total current through the first and second transistors, and conductance control means for control of the third transistor to obtain an amplifier gain that is substantially independent of changes in ambient temperature;

wherein the conductance control means includes a resistor that can be adjusted to provide a desired sensitivity ratio between the signal voltage component and the magnetic flux density.

17. The Hall-effect sensor as defined in claim 16, wherein the resistor is an external thick film resistor having a resistance value that is substantially independent of variations in ambient temperature.

18. The Hall-effect sensor as defined in claim 17, wherein the resistor can be laser-trimmed to adjust the resistance value.

19. The Hall-effect sensor for producing an electrical signal corresponding to magnetic flux density, comprising:

a Hall-effect element having bias electrodes for supply of bias voltage to the Hall-effect element and output electrodes at which an output voltage is produced, the output voltage having an offset voltage component and a signal voltage component;

voltage regulator means having a pair of output terminals conencted to the bias electrodes and operative for supplying a regulated voltage to the bias electrodes, the regulated voltage being maintained at a substantially constant value independent of load and ambient temperature variations, thereby producing an offset voltage component that is substantially constant and independent of variations in ambient temperature and a sensitivity ratio between the signal voltage component and the magnetic flux density that is a decreasing function of temperature; and

a measuring circuit connected to the output electrodes, the measuring circuit including a detector circuit that operates at controllable threshold levels, a resistor having a resistance value that is a decreasing function of temperature substantially the same as that of the sensitivity ratio, and means for controlling the threshold levels in accordance with the resistance value of the resistor, thereby adjusting the threshold level in proportion to the sensitivity ratio.

20. The Hall-effect sensor as defined in claim 19, wherein the Hall-effect element is of an epitaxial material and the resistor is of the same epitaxial material.