Annealing method for III-V deposition

• US 4,835,116 A
• Filed: 11/13/1987
• Issued: 05/30/1989
• Est. Priority Date: 11/13/1987
• Status: Expired due to Term

• Current Assignee: Kopin Corporation
• Original Assignee: Kopin Corporation
• Inventors: Lee, Jhang W., McCullough, Richard E.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US07/120,024
• Time in Patent Office: 564 Days
• Field of Search: 148/DIG. 3, 148/DIG. 25, 148/DIG. 48, 148/DIG. 56, 148/DIG. 65, 148/DIG. 72, 148/DIG. 90, 148/DIG. 94, 148/DIG. 97 , 148/DIG. 110, 148/DIG. 149, 148/DIG. 169, 156/610-614, 156/606, 437/81, 437/82, 437/104, 437/107, 437/126, 437/132, 437/247, 437/936, 437/939, 437/943, 437/946, 437/963, 437/967, 437/973
• US Class Current: 438/493
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02455 Group 13/15 materials
• CPC Class Codes: H01L 21/02538 Group 13/15 materials
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: Y10S 148/025 Deposition multi-step
• CPC Class Codes: Y10S 148/048 Energy beam assisted EPI growth
• CPC Class Codes: Y10S 148/065 Gp III-V generic compounds-processing
• CPC Class Codes: Y10S 148/094 Laser beam treatment of compound devices
• CPC Class Codes: Y10S 148/097 Lattice strain and defects
• CPC Class Codes: Y10S 148/11 Metal-organic CVD, ruehrwein type
• CPC Class Codes: Y10S 438/933 Germanium or silicon or Ge-Si on III-V

Abstract

A method for producing wafers having deposited layers of III-V materials on Si or Ge/Si substrates is disclosed. The method involves the use of multiple in situ and ex situ annealing steps and the formation of a thermal strain layer to produce wafers having a decreased incidence of defects and a balanced thermal strain. The wafers produced thereby are also disclosed.

Claims

1. A method for providing an article having III-V material layers which comprises:

a. providing a substrate upon which III-V material layers are to be deposited;

b. forming a III-V nucleation layer upon the substrate via organometallic chemical vapor deposition in a growth chamber;

c. forming a first III-V film upon the nucleation layer in the growth chamber;

d. annealing the first III-V film;

e. forming a second III-V film upon the first III-V film;

f. continuing the deposition of the second III-V film while simultaneously, repeatedly cycling the temperature between about 300° and

750°

C.; and

g. forming a third III-V film upon the second III-V film to form a layered substrate.

2. A method as in claim 1 wherein the substrate is selected from the group consisting of Si, Ge/Si or other single crystal substrates.

3. A method as in claim 1 wherein the III-V nucleation layer comprises a combination of a material selected from the group consisting of Ga, In and Al and a material selected from the group consisting of As, Sb and P.

4. A method as in claim 3 wherein the III-V nucleation layer comprises a material selected from the group consisting of GaAs, AlGaAs, InGaAs, InP, InGaAsP and InSb.

5. A method as in claim 1 wherein the first III-V film comprises a combination of a material selected from the group consisting of Ga, In and Al and a material selected from the group consisting of As, Sb and P.

6. A method as in claim 5 wherein the first III-V film comprises a material selected from the group consisting of GaAs and InP.

7. A method as in claim 1 wherein the second III-V film comprises a combination of a material selected from the group consisting of Ga, In and Al and a material selected from the group consisting of As and P.

8. A method as in claim 7 wherein the III-V film comprises a material selected from the group consisting of GaAs and InP.

9. A method as in claim 1 wherein the third III-V film comprises a combination of a material selected from the group consisting of Ga, In and Al and a material selected from the group consisting of As, Sb and P.

10. A method as in claim 9 wherein the third III-V film comprises a material selected from the group consisting of GaAs and InP.

11. A method as in claim 1 wherein the III-V nucleation layer is formed to a thickness of between about 10 and about 20 nm.

12. A method as in claim 1 wherin the III-V nucleation layer is formed at a temperature of between about 300°

and about 450°

C.

13. A method as in claim 1 wherein the first III-V layer is formed to a thickness of between about 50 and about 200 nm.

14. A method of claim 1 wherein the first III-V layer is formed at a temperature of between about 600°

and about 700°

C.

15. A method as in claim 1 wherein the first III-V layer contains a dopant.

16. A method as in claim 15 wherein the dopant is selected from the group consisting of Zn, S and Si.

17. A method as in claim 15 wherein the first III-V layer is formed to a thickness of between about 20 and 200 nm.

18. A method as in claim 15 wherein the first III-V layer is formed at a temperature of between about 600°

and about 700°

C.

19. A method as in claim 1 wherein the first III-V layer is annealed in-situ at a temperature of between about 800°

and about 850°

C. for between about 5 and about 10 minutes.

20. A method as in claim 15 wherein the first III-V layer is annealed in-situ at a temperature of between about 750°

and about 850°

C. for between about 5 and about 10 minutes.

21. A method as in claim 1 wherein the first III-V layer is annealed ex-situ at a temperature of between about 750°

and about 950°

C. for between about 5 seconds and about 15 minutes.

22. A method as in claim 1 wherein the second III-V layer is formed to a thickness of between about 500 and about 1500 nm.

23. A method as in claim 1 wherein the second III-V layer is formed at a temperature between about 600°

and about 700°

C.

24. A method as in claim 1 wherein the temperature cycling during the continued deposition of the second III-V layer is repeated between 1 and 5 times.

25. A method as in claim 24 wherein during each cycle, between about 5 and about 50 nm of III-V material is deposited.

26. A method as in claim 1 wherein the third III-V layer is formed at a temperature between about 600°

and about 700°

C. to a desired thickness.

27. A method as in claim 1 wherein the layered substrate is annealed at a temperature of between about 750°

and about 950°

C. for between about 5 seconds and about 15 minutes.

28. A method as in claim 1 wherein the forming of a second III-V film occurs concurrently with the annealing of the first III-V film.