Frasable electrically programmable read only memory cell using a three dimensional trench floating gate
First Claim
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1. An electrically programmable read only memory device formed in a face of a semiconductor substrate, comprising a floating gate transistor having a floating gate and a control gate formed at least partially in a trench in said substrate and including a tunnel device coupled to a source of said floating gate transistor and having a floating gate connected to the floating gate of said floating gate transistor and a control gate connected to the control gate of said floating gate transistor.
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Abstract
An electrically programmable read only memory device formed in a face of a semiconductor substrate which includes a floating gate transistor having a floating gate and a control gate formed at least partially in a trench in the substrate.
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9 Claims
- 1. An electrically programmable read only memory device formed in a face of a semiconductor substrate, comprising a floating gate transistor having a floating gate and a control gate formed at least partially in a trench in said substrate and including a tunnel device coupled to a source of said floating gate transistor and having a floating gate connected to the floating gate of said floating gate transistor and a control gate connected to the control gate of said floating gate transistor.
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