Gas sensor
First Claim
Patent Images
1. A gas sensing device comprising a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, included in order:
- (i) a conductor,(ii) an N-type light-absorbing semiconductor,(iii) a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, said dielectric being selected from the group consisting of phthalocyanine and clathrating agents; and
(iv) a light-transmitting gas-penetrable metal Schottky layer.
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Accused Products
Abstract
A gas sensor comprises a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed. The cell includes in order a conductor, an N-type light-absorbing semiconductor, and a thin light-transmitting gas-absorbing metal Schottky layer having electrical properties which vary with the type of gas sorbed therein.
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Citations
64 Claims
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1. A gas sensing device comprising a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, included in order:
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(i) a conductor, (ii) an N-type light-absorbing semiconductor, (iii) a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, said dielectric being selected from the group consisting of phthalocyanine and clathrating agents; and (iv) a light-transmitting gas-penetrable metal Schottky layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A gas sensing device comprising a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, included in order:
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(i) a conductor, (ii) an N-type light-absorbing semiconductor, (iii) a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, said dielectric being selected from the group consisting of phthalocyanine and clathrating agents; and (iv) a thin P-type light-transmitting, gas-penetrable semiconductor. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A method of sensing gas comprising the steps of:
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(A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, and a light-transmitting gas-absorbing metal Schottky layer having an electrical property which varies with the type of gas absorbed therein; (B) exposing the gas-absorbing metal Schottky layer to the gas and the N-type light-absorbing semiconductor to the light; and (C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the metal Schottky layer. - View Dependent Claims (31, 32, 33, 34, 35)
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36. A method of sensing gas comprising the steps of:
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(A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, and a light-transmitting gas-penetrable metal Schottky layer; (B) exposing the metal Schottky layer to the gas and to light; and (C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the dielectric. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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52. A method of sensing gas comprising the steps of:
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(A) providing a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed, including in order, a conductor, an N-type light-absorbing semiconductor, a light-transmitting gas-absorbing insulating layer of a dielectric having an electrical property which varies with the type of gas sorbed therein, and a thin P-type light-transmitting gas-penetrable semiconductor; (B) exposing the semiconductor to the gas and to light; and (C) correlating the photovoltage or photocurrent as a function of the type of gas sorbed by the semiconductor. - View Dependent Claims (53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64)
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Specification