Method of making an acceleration hardened resonator

• US 4,836,882 A
• Filed: 09/12/1988
• Issued: 06/06/1989
• Est. Priority Date: 09/12/1988
• Status: Expired due to Fees

• Current Assignee: United States Of America As Represented By The Secretary Of The Army (Government of the United States of America)
• Original Assignee: The United States Of America As Represented By The Secretary Of The Army
• Inventors: Ballato, Arthur
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/243,538
• Time in Patent Office: 267 Days
• Field of Search: 156/626, 156/643, 156/654, 156/655, 156/663, 156/601, 204/192.1, 204/192.11, 204/192.13-19.32, 204/192.33, 427/8, 427/38, 427/39, 427/421, 427/53.1, 219/121 LM
• US Class Current: 216/59
• CPC Class Codes: H03H 3/007 for the manufacture of electromechanical resonators or networks
• CPC Class Codes: H03H 3/013 for obtaining desired frequency or temperature coefficient H03H3/0076 H03H3/04, H03H3/10 take precedence

Abstract

An acceleration hardened resonator is made by a method including the stepsf:

(A) manufacturing and mounting the resonator,

(B) performing acceleration tests to determine the acceleration sensitivity,

(C) changing the interaction of the motional distribution with the stress field of the resonator in order to reduce the acceleration sensitivity, and

(D) repeating steps (B) and (C) until a minimal acceleration sensitivity is obtained.

Claims

1. Method of making an acceleration hardened resonator said method including the steps of:

(A) manufacturing and mounting the resonator,

(B) performing acceleration tests to determine the acceleration sensitivity,

(C) changing the interaction of the motional distribution with the stress field of the resonator in order to reduce the acceleration sensitivity, and

(D) repeating steps (B) and (C) until a minimal acceleration sensitivity is obtained.

2. Method according to claim 1 wherein in step (C), the interaction of the motional distribution with the stress field of the resonator is changed by an etching method selected from the group consisting of ion beam milling, RIE etching, chemical etching, chemomechanical etching, photolytic etching, laser ablation and plasma etching.

3. Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by ion beam milling.

4. Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by RIE etching.

5. Method according to claim 2 wherein the interaction fo the motional distribution with the stress field of the resonator is changed by chemical etching.

6. Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by chemomechanical etching.

7. Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by photolytic etching.

8. Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by laser ablation.

9. Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by plasma etching.

10. Method according to claim 2 wherein the etching is carried out by the use of multi-line raster scan.

11. Method according to claim 2 wherein the etching is carried out by analog method.

12. Method according to claim 1 wherein in step (C) the interaction of the motional distribution with the stress field of the resonator is changed by a deposition method selected from the group consisting of ion implantation, thermal evaporation, molecular beam epitaxy, electron beam vaporization, anodization, electroplating, liquid-phase epitaxy, sputtering, plasma oxidation, inorganic film deposition, laser-assisted CVD, gas phase photolysis, spray coating, alloying, and doping.

13. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by ion implantation.

14. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by thermal evaporation.

15. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by molecular beam epitaxy.

16. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by electron beam vaporization.

17. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by anodization.

18. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by electroplating.

19. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by liquid-phase epitaxy.

20. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by sputtering.

21. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by plasma oxidation.

22. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by inorganic film deposition.

23. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by organic film polymerization. 18

24. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by chemical vapor deposition.

25. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by laser-assisted chemcial vapor deposition.

26. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by gas phase photolysis.

27. Method according to claim 12 wherein the interaction of the motional distributionwith the stress field of the resonator is changed by spray coating.

28. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by alloying.

29. Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by doping.

30. Method according to claim 12 wherein the deposition is carried out by the use of a multi-line raster scan.

31. Method according to claim 12 wherein the deposition is carried out by an analog method.

32. Method according to claim 1 wherein in step (C), the interaction of the motional distribution with the stress field of the resonator is changed by annealing portions of the electrode, by shining thereon an electron beam.

33. Method according to claim 1 wherein in step (C), the interaction of the motional distribution with the stress field of the resonator is changed by annealing portions of the electrode, by shining thereon an electromagnetic source of energy.