Processing apparatus

• US 4,836,905 A
• Filed: 07/16/1987
• Issued: 06/06/1989
• Est. Priority Date: 07/16/1987
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Simpson, Bruce, Abernathy, Joseph V., Jones, John I., Bohlman, James G., Loewenstein, Lee M., Davis, Cecil J., Matthews, Robert T., Hildenbrand, Randall C.
• Primary Examiner(s): Nguyen, Nam X.
• Application Number:
  US07/075,018
• Time in Patent Office: 691 Days
• Field of Search: 156/345, 156/643, 204/298, 204/192.1, 204/192.12, 414/217, 414/219, 414/222, 414/223, 414/226, 118/719, 118/729
• US Class Current: 204/298.25
• CPC Class Codes: C23C 14/50 Substrate holders
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67748 horizontal transfer of a single workpiece
• CPC Class Codes: H01L 21/67751 vertical transfer of a single workpiece
• CPC Class Codes: Y10S 414/136 including wafer orienting means
• CPC Class Codes: Y10S 414/137 including means for charging or discharging wafer cassette

Abstract

A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.

Claims

1. An apparatus for processing of wafers, comprising:

(a) a vacuum processing chamber having a top processing chamber having means for performing a first processing step and an upper processing space having means for performing a second processing step within said vacuum processing chamber;

(b) a wafer support within said vacuum processing chamber, said wafer support being capable of supporting a wafer in a substantially face down position with substantially no damage to structures on the face of said wafer in the top processing chamber while a first processing step is being performed; and

(c) said wafer support being movable to rotate said wafer from said substantially face down position in said top process chamber into a more nearly vertical position in said upper processing space where a second processing step can be performed.

2. The apparatus of claim 1 wherein the first processing step is a cleanup step.

3. The apparatus of claim 1 wherein the second processing step is a sputter deposition step.

4. The apparatus of claim 1 further comprising a wafer transfer mechanism positioned to controllably transfer wafers through an openable port into said vacuum process chamber, said wafer transfer mechanism being capable of operation under high vacuum.

10. The apparatus of claim 3 wherein said first process station comprises a sputtering apparatus.

5. An apparatus for processing of wafers, comprising:

(a) a vacuum process chamber having a top processing chamber having means for performing a first processing step and an upper processing space having means for performing a second processing step in the processing chamber;

(b) a wafer support within said vacuum process chamber, said wafer support being capable of supporting a wafer in a substantially face down position with substantially no damage to structures on the face of said wafer in a top processing chamber where a first processing step can be performed; and

(c) said wafer support is openable and closeable and is also controllable independently thereof to move said wafer support from said substantially face down position in said top processing chamber into a more nearly vertical position in said upper processing space where a second processing step can be performed.

6. The apparatus of claim 5 wherein the first processing step is a cleanup step.

7. The apparatus of claim 5 wherein the second processing step is a sputter deposition step.

8. The apparatus of claim 5 further comprising a wafer transfer mechanism positioned to controllably transfer wafers through an openable port into said vacuum process chamber, said wafer transfer mechanism being capable of operation under high vacuum.

9. An apparatus for processing of wafers, comprising:

(a) a vacuum process chamber;

(b) a wafer support within said vacuum process chamber, said wafer support being capable of supporting a wafer in a substantially face down position with substantially no damage to structures on the face of said wafer;

(c) said wafer support is openable and closeable and is also controllable independently thereof to move said wafer support from said substantially face down position into a more nearly vertical position;

(d) a first process station to effect predetermined operation on a wafer held in said more nearly vertical position; and

(e) second process station to effect predetermined operation on a wafer held in said substantially face down position.

11. The apparatus of claim 9 wherein the cleanup step is performed at the second process station.

12. The apparatus of claim 9 further comprising a wafer transfer mechanism positioned to controllably transfer wafers through an openable port into said vacuum process chamber, said wafer transfer mechanism being capable of operation under high vacuum.