Dual-gate fet amplifier-mixer with intermediate ohmic island for rejecting a frequency band

• US 4,841,169 A
• Filed: 02/24/1986
• Issued: 06/20/1989
• Est. Priority Date: 03/03/1982
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Tsironis, Christos
• Primary Examiner(s): Miller, Stanley D.
• Assistant Examiner(s): ROSEEN, RICHARD R
• Application Number:
  US06/833,571
• Time in Patent Office: 1,212 Days
• Field of Search: 307/304, 307/529, 307/305, 307/303, 307/520, 357/51, 357/127, 357/128, 357/104, 330/305
• US Class Current: 327/566
• CPC Class Codes: H01L 29/8124 with multiple gate
• CPC Class Codes: H03D 2200/0007 Dual gate field effect transistors
• CPC Class Codes: H03D 7/125 with field effect transistors
• CPC Class Codes: H03D 9/0675 using field effect transistors H03D9/0683 takes precedence
• CPC Class Codes: H03F 3/1935 with junction-FET devices

Abstract

A dual gate field effect transistor having an intermediate ohmic island between the two transistor halves is connected to operate as an amplifier-mixer for rejecting a frequency band. A paragraph continued series resonant circuit comprising an inductance and a capacitor is connected at one of its ends to the ohmic island of the field effect transistor and at the other end to ground. Polarization voltages are applied to each electrode of the dual-gate transistor so that the first half or part of the transistor extending from the source electrode to the ohmic island is brought into a state of saturation and the second part of the transistor extending from the ohmic island to the drain electrode is brought into a state of non-saturation.

Claims

1. An amplifier-filter-mixer device comprising a single dual-gate field effect transistor including a semiconductor substate on which are disposed:

(a) a source electrode spaced apart from a drain electrode;

(b) spaced-apart first and second gate electrodes located between the source and drain electrodes;

(c) an ohmic island located between the first and second gate electrodes; and

(d) a band rejection filter comprising a resonant circuit including an inductor and a capacitor electrically connected in series, said resonant circuit having first and second ends, the first end being electrically connected to the ohmic island;

said device being operable such that when predetermined bias voltages are applied thereto;

(1) a first part of the field effect transistor electrically coupled to the first gate electrode and extending from the source electrode to the ohmic island effects amplification of an input signal applied to the first gate electrode;

(2) a second part of the field effect transistor electrically coupled to the second gate electrode and extending from the ohmic island to the drain electrode effects mixing of the amplified input signal with a local oscillator signal applied to the second gate electrode; and

(3) said resonant circuit rejects noise signals received at the first gate electrode and parasitic signals produced during mixing of the input signal and the local oscillator signal;

said predetermined bias voltages including a common reference voltage applied to the source electrode and the second end of the resonant circuit, and voltages applied to the drain electrode and the first and second gate electrodes which effect saturated operation of the first part of the field effect transistor and non-saturated operation of the second part of the field effect transistor.

2. An amplifier-filter-mixer device as in claim 1 where said resonant circuit comprises an interdigitated conductive layer on said substrate.