Solid state image pickup device

• US 4,841,348 A
• Filed: 07/09/1987
• Issued: 06/20/1989
• Est. Priority Date: 07/09/1986
• Status: Expired due to Term

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Shizukuishi, Makoto, Kondo, Ryuji
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Mintel, William A.
• Application Number:
  US07/071,684
• Time in Patent Office: 712 Days
• Field of Search: 357/30 H, 357/30 G, 357/30 D, 357/31, 357/32, 357/24 L R, 357/40, 357/41, 357/42, 357/30 K, 357/30 L
• US Class Current: 257/226
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer

Abstract

An solid state optical pickup device having integrally formed therein both a photosensitive matrix and peripheral circuits thereto. Both the photosensitive matrix and the peripheral circuit are built according to CMOS IC technology. A photoconductive film overlies the entire photosensitive matrix and is electrically connected to each of the charge accumulating regions in the matrix.

Claims

1. A solid state pickup device, comprising:

a semiconductor substrate of a first conductivity type;

a photosensitive section comprising;

a region of a second conductivity type formed in said semiconductor substrate, said region having semiconductive channels of the first conductivity type located at a surface of said region, and having a plurality of charge accumulation means corresponding to respective picture elements;

means for transferring signals accumulated in said charge accumulation means;

a logic circuit integrally formed with said region in said substrate and at a periphery of said region; and

a photoconductive film formed on, and contiguous with, said substrate including said region and said logic circuit, and means for electrically coupling said photoconductive film to each of said plurality of charge accumulation means, and for supplying thereto an electric signal produced in response to light incident on said photoconductive film.

2. The device according to claim 1, further comprising a transparent electrode layer formed on, and contiguous with, said photoconductive film.

3. The device according to claim 2, further comprising a color filter layer formed on, and contiguous with, said transparent electrode layer.

4. The device according to claim 3, further comprising a light shielding layer formed on, and contiguous with, said color filter layer such that portions of said photoconductive film other than the portion of said photoconductive film directly above said region, are optically shielded.

5. The device according to claim 4, further comprising a glass layer formed on, and contiguous with, said light shielding layer and said color filter layer.

6. The device according to claim 1, wherein the first conductivity is of n-type, the second conductivity is of p-type and wherein said charge accumulation means is an n-channel MOS transistor.

7. The device according to claim 1, wherein said charge accumulation means comprises an accumulation diode.

8. The device according to claim 1, wherein said transfer means comprises a charge-coupled-device (CCD).

9. The device according to claim 1, wherein said region includes a plurality of sources and drains, said sources and drains both being of the first conductivity type, and a plurality of gate electrodes, each of said gate electrodes forming conduction channels between respective pairs of sources and drains.

10. The device according to claim 9, wherein said region includes an accumulation diode of the second conductivity type

11. The device according to claim 9, wherein said semiconductor substrate includes a horizontal shift register and a vertical shift register, and wherein each of said gate electrodes is connected to said horizontal shift register.