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Vibratory transducer

  • US 4,841,775 A
  • Filed: 01/19/1988
  • Issued: 06/27/1989
  • Est. Priority Date: 09/06/1985
  • Status: Expired due to Fees
First Claim
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1. A vibratory transducer for vibrating a vibratory beam formed on a single silicon crystal at a natural frequency thereof and for detecting a change in the frequency of vibration of the vibratory beam dependent on change in a force applied on said single silicon crystal or environment, said transducer comprising a single silicon crystal which comprises a p-type semiconductor conductor containing impurities at a concentration of 10.sup.. or 1017 atoms/cm3 or less, and an n+ diffused layer of a single silicon crystal containing impurities at a concentration ranging from 1017 to 1018 atoms/cm3 ;

  • a vibratory beam formed of the n+ diffused layer by underetching said n+ diffused layer by the selective etching technique;

    said vibratory beam having at least one fixed point;

    means for causing said vibratory beam to vibrate at the natural frequency; and

    detecting means for detecting the vibration.

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