Multi-chamber deposition system

• US 4,841,908 A
• Filed: 02/16/1988
• Issued: 06/27/1989
• Est. Priority Date: 06/23/1986
• Status: Expired due to Fees

• Current Assignee: 3M Company
• Original Assignee: 3M Company
• Inventors: Jacobson, Richard L., Jeffrey, Frank R., Westerberg, Roger K.
• Primary Examiner(s): Morgenstern, Norman
• Assistant Examiner(s): Baeker, Margaret
• Application Number:
  US07/156,548
• Time in Patent Office: 497 Days
• Field of Search: 118/719, 118/718, 118/723, 118/733, 118/725, 427/39
• US Class Current: 118/718
• CPC Class Codes: C23C 16/0245 by etching with a plasma
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating

Abstract

A system for the simultaneous deposition of different coatings onto a thin web within a large volume vacuum chamber is disclosed which chamber is provided with a plurality of deposition chambers in which the different layers are deposited onto the film as its moves from a supply roll to a finished take-up roll of coated web. The deposition chambers provided within the large vacuum chamber are provided with separate seals which minimize back diffusion of any dopant gas from adjacent deposition chambers.

Claims

1. A vacuum deposition apparatus for depositing a plurality of layers of varying composition on a substrate, said apparatus comprising

a first vacuum chamber formed to withstand a pressure differential of one atmosphere,

a plurality of deposition chambers located within said vacuum chamber, said deposition chambers each comprising a base plate and wall means defining a rectangular open area, a platen formed to fit on the upper edges of said walls means, and gate means associated with two opposed wall members for defining an entrance and exit slit through which a web may pass into said chamber and from said chamber, and

pump means connected to said vacuum chamber for maintaining a pressure within said vacuum chamber which is lower than the pressure in each said deposition chambers for restricting the diffusion of gas from any one deposition chamber to another deposition chamber.

2. A vacuum deposition apparatus for depositing a plurality of layers of material of varying composition onto the surface of a moving substrate, each layer being applied in the presence of a glow discharge, said apparatus comprising

a vacuum chamber,

means for supporting a roll of said substrate within said vacuum chamber,

take-up means for rewinding the coated substrate being located within said vacuum chamber,

a plurality of deposition chambers located in spaced positions within said vacuum chamber,

means for guiding said substrate through each of said deposition chambers,

each deposition chamber comprising wall means defining an enclosure with an entrance slit and exit slit through which said substrate may pass, said slit affording restricted passageways,

means for introducing gas into each of said deposition chambers,

means for heating said chambers,

means for developing an electrical potential within said deposition chambers to develop a plasma for depositing at least one element from said gas onto said substrate,

means for continuously advancing said substrate from said supply roll to said take-up roll, and

a pump connected to said vacuum chamber for maintaining a pressure within said vacuum chamber which is lower than the pressure in each said deposition chamber for restricting the diffusion of gas from any one deposition chamber to another deposition chamber.

3. A vacuum deposition apparatus according to claim 2 wherein said means for guiding said substrate comprises a platen extending from said entrance slit to said exit slit and having a smooth contoured surface against which said substrate is maintained in intimate contact during movement through said deposition chamber.

4. A vacuum deposition apparatus according to claim 2 wherein each said deposition chamber comprises a base plate having spaced side walls and end walls projecting therefrom, heating means in said base plate, a quartz plate on said base plate within said side walls and end walls, an electrode disposed adjacent said quartz plate and insulated from said base plate, means for introducing gas adjacent said electrode, a platen enclosing said electrode within said side walls, said platen cooperating with said end walls to define said entrance slit and exit slit and being spaced above said side walls for discharge of fine particles resulting from the deposition process.