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Magnetic field-enhanced plasma etch reactor

  • US 4,842,683 A
  • Filed: 04/25/1988
  • Issued: 06/27/1989
  • Est. Priority Date: 12/19/1986
  • Status: Expired due to Term
First Claim
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1. A vacuum processing reactor, comprising a housing defining a vacuum chamber therein adapted for etching a wafer positioned within the chamber at a high rate and with etching uniformity substantially independent of pressure, comprising:

  • a pedestal having a convex-shaped surface for supporting the wafer in a bowed configuration parallel to the pedestal surface;

    a gas manifold for supplying reactant gases to the chamber;

    means for applying RF energy between the wafer support pedestal and the gas manifold for generating a wafer etching plasma;

    electric current-controlled magnetic field generating means for forming a D.C. magnetic field generally parallel to the wafer surface;

    means for selectively applying current to the field generating means for independently controlling the intensity and orientation of the magnetic field; and

    means for applying gas under pressure between the surface of the pedestal and the wafer to provide uniform thermal conduction between the wafer and the pedestal.

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