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Method for manufacturing transparent conductive indium-tin oxide layers

  • US 4,842,705 A
  • Filed: 03/28/1988
  • Issued: 06/27/1989
  • Est. Priority Date: 06/04/1987
  • Status: Expired due to Fees
First Claim
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1. A method for applying a transparent, conductive indium-tin oxide coating on a substate of amorphous, hydrogen-containing silicon which method comprises the steps of:

  • providing an unheated substrate of amorphous, hydrogen-containing silicon in an enclosed coating zone;

    applying sources of both indium and tin in a first stage onto said substrate while maintaining the substrate unheated and maintaining an oxygen partial pressure at a low level in said zone until a partial coating is built-up on said substrate;

    temporarily reducing the oxygen partial pressure in said coating zone in a second stage and maintaining the substrate unheated and continuing the coating until an additinal coating thickness is built-up on said substrate;

    continuing coating in a third stage with the oxygen partial pressure the same as during the first stage to complete the coating to a final thickness; and

    thereafter heating the coated substrate in an oxygen containing atmosphere at a temperature less than 250°

    C.

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