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Method for forming abrasion-resistant polycarbonate articles, and articles of manufacture produced thereby

  • US 4,842,941 A
  • Filed: 04/06/1987
  • Issued: 06/27/1989
  • Est. Priority Date: 04/06/1987
  • Status: Expired due to Term
First Claim
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1. A method for forming an abrasion-resitant article, comprising the steps of:

  • (a) Applying an interfacial layer on the surface of a polycarbonate substrate wherein the interfacial layer comprises a curable organopolysiloxane composition containing a dispersion of colloidal silica in a solution of the partial condensate of a silanol having the formula RSi(OH)3 or R2Si(OH)2, wherein R is selected from the group consisting of alkyl groups having about 1 to 3 carbon atoms and aryl groups having about 6 to 20 carbon atoms, wherein at least 70 weight percent of the silanol is CH3Si(OH)3 or (CH3)2Si(OH)2 in a mixture of an aliphatic alcohol and water; and

    (b) Applying an abrasion-resistant top layer containing a material selected from the group consisting of silicon carbide, silicon dioxide, silicon nitride, silicon oxynitride, boron oxide, boron nitride, aluminum oxide, aluminum nitride, and titanium dioxide, on the interfacial layer by;

    (i) situating the polycarbonate substrate having the interfacial layer disposed thereover in a reactor chamber which is pressurized at between about 50 millitorrs and about 10 torrs; and

    (ii) passing into the reactor chamber with a carrier gas at least one gaseous reactant capable of reacting to form the composition of said top layer in a laminar flow having a Reynolds value of about 2.5 relative to the surface of the interfacial layer at a flow rate of between 500 sccm and 10,000 sccm while generating an electric field in the chamber to form a sustained plasma of the gaseous reactant, wherein the plasma is formed by an electrical generator operating at dc or at ac frequencies of betwen about 50 Hz and about 10 GHz and at a power value of between 10 watts and 5000 watts, said substrate being heated to a temperature between about room temperature and 130°

    C., said gaseous reactant reacting in the plasma and on the interfacial layer to form said top layer.

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