Memory device using shift-register

• US 4,845,670 A
• Filed: 02/17/1987
• Issued: 07/04/1989
• Est. Priority Date: 02/18/1986
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Corporation (Panasonic Holdings Corporation)
• Inventors: Fujii, Masaru, Ohta, Kiyoto, Nishimoto, Toshio, Kawai, Hideki
• Primary Examiner(s): Fears, Terrell W.
• Application Number:
  US07/015,348
• Time in Patent Office: 868 Days
• Field of Search: 365/78, 365/154, 365/189, 365/230, 307/221
• US Class Current: 365/78
• CPC Class Codes: G11C 7/1036 using data shift registers

Abstract

In a memory device, a shift-register comprises a plurality of stages for transferring sequentially a pair of signals which have mutually opposite phases. Each stage has a comparator circuit which compares the pair of signals and generates a pair of fixed voltage signals. By this construction, high-speed operation of the memory device, low power consumptions, and high-capacity load driving are achieved.

Claims

1. A memory device comprising:

a least one memory array;

at least one input-output circuit for transmitting a pair of input signals having mutually opposite phases;

at least one clock generating circuit for generating a plurality of clock pulses;

at least one shift register having a plurality of series connected stages, each of said stages having a dynamic comparator circuit comprising first and second transistor groups, said first and second transistor groups being controlled by said pair of input signals respectively and cooperating with each other under the control of said clock pulses so that a first node potential corresponding to said first transistor group makes a second node potential corresponding to said second transistor group rise, and said second node potential makes said first node potential drop, such that third and fourth node potentials corresponding to said first and second nodes respectively are fixed as a pair of fixed voltage signals, and each of said stages having a buffer circuit for receiving said pair of fixed voltage signals and for making an impedance condition change from a high impedance condition to a low impedance condition;

a plurality of switching circuits for controlling signal transfer between each of said stages of said shift register and said at least one memory array by means of said clock pulses.

2. The memory device as claimed in claim 1, wherein said dynamic comparator further comprises:

first and second MOS transistors for respectively transmitting said pair of input signals in response responsive to a first clock pulse;

third and fourth MOS transistors responsive to said pair of input signals and coupled to said first and second MOS transistors and;

fifth and seventh MOS transistors coupled to and responsive to said second node potential;

sixth and eighth MOS transistors coupled to an responsive to said first node potential;

ninth and tenth MOS transistors having drain electrodes connected to said first and second nodes respectively, and having source electrodes supplied with a second clock pulse, said second clock pulse having a phase opposite that of said first clock pulse;

means for supplying a potential to said third and fourth nodes responsive to said first clock pulse;

wherein said third and fourth nodes are connected to gate electrodes of said ninth and tenth MOS transistors respectively.

3. The memory device as claimed in claim 2, wherein said pair of fixed voltage signals are a DC power source voltage and a ground voltage respectively.

4. A shift register comprising:

a plurality of stages for transferring a pair of signals having mutual opposite phases, each of said stages comprising;

two input terminals to which said pair of signals are transmitted;

a dynamic comparator circuit comprising first and second transistor groups, said first and second transistor groups being respectively controlled by said pair of input signals and cooperating with each other under the control of said clock pulses so that a first node potential corresponding to said first transistor group makes a second node potential corresponding to said second transistor group rise, and said second node potential makes said first node potential drop, such that third and fourth node potentials corresponding to said first and second nodes respectively are fixed as a pair of fixed voltage signals,

a buffer circuit for receiving said pair of fixed voltage signals and for changing an impedance condition from a high impedance condition to a low impedance condition,

two output terminals responsive to said dynamic comparator circuit for transmitting said pair of fixed voltage signals to a succeeding stage.

5. The shift register as claimed in claim 4, wherein said dynamic comparator further comprises:

first and second MOS transistors for respectively transmitting said pair of input signals in response to a first clock pulse;

third and fourth MOS transistors respectively coupled to said first and second MOS transistors and responsive to said pair of input signals;

fifth and seventh MOS transistors coupled to an responsive to said second node potential;

sixth and eighth MOS transistors coupled to and responsive to said first node potential;

ninth and tenth MOS transistors having drain electrodes connected to said first and second nodes respectively, and having source electrode supplied with a second clock pulse, said second clock pulse having a phase opposite that of said first clock pulse;

a means for supplying a potential to third and fourth nodes responsive to said first clock pulse;

said third and fourth nodes being connected to gate electrodes of said ninth and tenth MOS transistors respectively.

6. The shift register as claimed in claim 4, wherein each of said stages further comprises:

a buffer circuit for receiving said pair of fixed voltage signals and for changing an impedance condition from a high impedance condition to a low impedance condition, and

a latch circuit for holding said pair of fixed voltage signals by means of at least one pair of cooperating transistors.

7. The shift register as claimed in claim 6, wherein said latch circuit is comprised of:

first and third MOS transistors having sources connected to a ground voltage and a DC power supply voltage respectively; and

second and fourth MOS transistors having sources connected to a ground voltage and a DC power supply voltage respectively,

wherein one of said pair of fixed voltage signals is supplied to drain electrodes of said first and third MOS transistors and to a gate electrode of said second MOS transistor, and wherein the other one of said pair of fixed voltage signals is supplied to drain electrodes of said second and fourth MOS transistors and to a gate electrode of said first MOS transistor, and wherein gate electrodes of said third and fourth MOS transistors are connected to a Vcc voltage via a fifth MOS transistor and connected to a pumping circuit in order to raise a potential of said gate electrodes of said third and fourth MOS transistors to a level higher than said DC power supply voltage.

8. The shift register as claimed in claim 4, wherein said pair of fixed voltage signals are a DC power supply voltage and a ground voltage respectively.

9. An electronic circuit comprising:

a dynamic comparator circuit comprised of first and second transistor groups, said first and second transistor groups being controlled by a pair of input signals respectively having mutually opposite phases and cooperating with each other under the control of clock pulses so that a first node potential corresponding to said first transistor group makes a second node potential corresponding to said second transistor group rise, and so that said second node potential makes said first node potential drop, and thereby third and fourth node potentials corresponding to said first and second nodes respectively are fixed as a pair of fixed voltage signals;

a buffer circuit for receiving said pair of fixed voltage signals and for changing an impedance condition from a high impedance condition to a low impedance condition; and

,

a latch circuit for holding said pair of fixed voltage signals by means of at least one pair of cooperating transistors.

10. The electric circuit as claimed in claim 9, wherein said dynamic comparator is further comprised of:

first and second MOS transistors for respectively transmitting said pair of input signals in response to a first clock pulse;

third and fourth MOS transistors coupled to and responsive to said pair of input signals respectively;

fifth and seventh MOS transistors coupled to and responsive to said second node potential;

sixth and eighth MOS transistors responsive to said first node potential;

ninth and tenth MOS transistors having drain electrodes connected to said first and second nodes respectively, and having source electrodes supplied with a second clock pulse, said second clock pulse having a phase opposite that of said first clock pulse;

means for supplying Vcc voltage to third and fourth nodes responsive to said first clock pulse;

said third and fourth nodes being connected to gate electrodes of said ninth and tenth MOS transistors respectively.