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Reaction chambers for CVD systems

  • US 4,846,102 A
  • Filed: 06/24/1987
  • Issued: 07/11/1989
  • Est. Priority Date: 06/24/1987
  • Status: Expired due to Term
First Claim
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1. A chemical vapor deposition system for processing a single wafer at a time comprising:

  • a reaction chamber including;

    an elongated generally rectangular top panel;

    an elongated generally rectangular bottom panel, the plane of said top panel being substantially parallel to and coextensive with the plane of said bottom panel;

    a pair of elongated side panels operatively connecting said top and bottom panels to form a longitudinal box like configuration having a rectangular cross section with a hollow longitudinal interior;

    a front end of said reaction chamber having a reactant gas input;

    a rear end of said reaction chamber having an output for exhausting the at least partially spent gas therefrom;

    means forming an aperture in an intermediate portion of said bottom panel;

    a well including a top opening coincident with said aperture, walls depending generally vertically downwardly from said aperture, a base for substantially closing the lower end of said walls to form a hollow cavity interior of said walls and said base, said base including a central base aperture;

    a susceptor for demountably positioning a single wafer to be processed thereon;

    means for operatively positioning said susceptor with respect to said aperture; and

    a quartz plate operatively disposed on the interior surface of said bottom panel, said quartz plate having a front edge at the front end of said reaction chamber and a rear edge at said aperture in said bottom panel for substantially reducing the amount of reactor gas which passes under said susceptor through a gap between said rear edge and said susceptor by narrowing the gap at the middle of said reaction chamber and widening the gap toward the sides of said reaction chamber.

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