Reaction chambers for CVD systems

• US 4,846,102 A
• Filed: 06/24/1987
• Issued: 07/11/1989
• Est. Priority Date: 06/24/1987
• Status: Expired due to Term

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: Epsilon Technology Incorporated (ASM International NV)
• Inventors: Ozias, Albert E.
• Primary Examiner(s): Lawrence, Evan
• Application Number:
  US07/065,945
• Time in Patent Office: 748 Days
• Field of Search: 118/725, 118/729, 118/730, 118/715, 118/728
• US Class Current: 118/730
• CPC Class Codes: C30B 25/10 Heating of the reaction chamber or the substrate
• CPC Class Codes: C30B 29/06 Silicon

Abstract

An improved reaction chamber for use in an epitaxial deposition process for processing a single wafer-at-a-time includes a cold-wall reactor having a substantially rectangular cross-section. The cross-sectional area of the reaction chamber is substantially reduced to increase the efficiency of the system. Apparatus is provided to maintain the wall temperature within a predetermined range for insuring that only readily cleanable deposits are formed. The susceptor assembly is mounted within a wall distending vertically downward from the bottom of the chamber or within a second portion of a duel height chamber having a greater cross-sectional area. A method and apparatus is provided for supplying purge gas to prevent the flow of reactant gas and the undesirable deposits resulting therefrom from forming beneath the susceptor. The flow of reactant gas beneath the susceptor is controlled by a quartz plate for narrowing the gap between the input end of the reactor and the susceptor and for simultaneously shaping the gap to provide a desired velocity profile. Alternatively, a horizontal extension of the floor of the cavity can be provided to perform substantially the identical function. Furthermore, two types of reactant gas injectors can be used for controlling the result in velocity profile of the injected gases.

Claims

1. A chemical vapor deposition system for processing a single wafer at a time comprising:

a reaction chamber including;

an elongated generally rectangular top panel;

an elongated generally rectangular bottom panel, the plane of said top panel being substantially parallel to and coextensive with the plane of said bottom panel;

a pair of elongated side panels operatively connecting said top and bottom panels to form a longitudinal box like configuration having a rectangular cross section with a hollow longitudinal interior;

a front end of said reaction chamber having a reactant gas input;

a rear end of said reaction chamber having an output for exhausting the at least partially spent gas therefrom;

means forming an aperture in an intermediate portion of said bottom panel;

a well including a top opening coincident with said aperture, walls depending generally vertically downwardly from said aperture, a base for substantially closing the lower end of said walls to form a hollow cavity interior of said walls and said base, said base including a central base aperture;

a susceptor for demountably positioning a single wafer to be processed thereon;

means for operatively positioning said susceptor with respect to said aperture; and

a quartz plate operatively disposed on the interior surface of said bottom panel, said quartz plate having a front edge at the front end of said reaction chamber and a rear edge at said aperture in said bottom panel for substantially reducing the amount of reactor gas which passes under said susceptor through a gap between said rear edge and said susceptor by narrowing the gap at the middle of said reaction chamber and widening the gap toward the sides of said reaction chamber.

2. The system of claim 1 further including means for operatively positioning said susceptor above the plane of said bottom panel to a position substantially coplanar with the plane of said bottom panel and displaced a relatively short vertical distance above the plane of said bottom panel for optimally positioning the wafer carried by said susceptor in an optimal flow of reactant gas from the reactant gas input.

3. The system of claim 2 further including means for rotating said susceptor.

4. The system of claim 2 wherein said Chemical Vapor Deposition system includes an epitaxial deposition system.

5. The system of claim 1 further including means for manually adjusting the vertical height of said susceptor with respect to said aperture in said bottom panel.

6. The system of claim 1 further including means for rotating said susceptor.

7. The system of claim 1 wherein said quartz plate is generally planar and includes a pair of generally parallel opposite sides disposed adjacent the sides of said reaction chamber, a relatively straight front end defining said front edge generally perpendicular to said pair of sides and operatively disposed facing the front end of said reaction chamber and an inwardly curved rear end defining said rear edge and adapted to extend into said aperture and overhang a portion of said well, said rear edge being shaped to be operatively disposed about and at least partially around the outer peripheral edge of a portion of said susceptor for forming a relatively narrow gap between said rear edge of said quartz plate and a portion of the outer peripheral edge of said susceptor.

8. The system of claim 7 wherein said rear edge of said quartz plate encircles nearly 180°

of the peripheral edge of said susceptor.

9. The system of claim 7 wherein said rear edge is configured to narrow the gap in the center along the longitudinal axis of said reaction chamber and widen the gap as it extends away from the center toward the outer ends thereof proximate the sides of said reaction chamber.

10. The system of claim 7 wherein the plane of said quartz plate is parallel to the plane of said bottom panel and is disposed horizontally thereon and wherein said rear edge extends along the plane of said quartz plate and is disposed horizontally past the edge of said aperture to overhang a portion of said well and be positioned closer to the peripheral edge of said susceptor for limiting the gap therebetween and the amount of reactant gas which can pass into said well beneath said susceptor.

11. A chemical vapor deposition system for processing a single wafer at a time comprising:

a reaction chamber including;

an elongated generally rectangular top panel;

an elongated generally rectangular bottom panel, the plane of said top panel being substantially parallel to and coextensive with the plane of said bottom panel;

a pair of elongated side panels operatively connecting said top and bottom panels to form a longitudinal box like configuration having a rectangular cross section with a hollow longitudinal interior;

a front end of said reaction chamber having an reactant gas input;

a rear end of said reaction chamber having an output for exhausting the at least partially spent gas therefrom;

means forming an aperture in an intermediate portion of said bottom panel;

a well including a top opening coincident with said aperture, walls depending generally vertically downwardly from said aperture, a base for substantially closing the lower end of said walls to form a hollow cavity interior of said walls and said base, said base including a base aperture;

a susceptor for demountably positioning a single wafer to be processed thereon;

means for operatively positioning said susceptor with respect to said aperture; and

an extension of a portion of said bottom panel horizontally past the edge of said aperture to overhang at least a portion of said well, said extension being inwardly curved for positioning a portion of said susceptor therein and forming a gap between the inwardly curved portion of said extension and the peripheral edge of said susceptor for adjusting the velocity of the gas flow therepast to provide a more uniform deposition on the wafer disposed on said susceptor.

12. The system of claim 11 wherein said inwardly curved portion of said extension substantially encircles nearly 180°

of circumference of the peripheral edge of said susceptor.

13. The system of claim 11 wherein the inwardly curved portion of said extension includes means for narrowing the gap at the longitudinal center of said reaction chamber and widening the gap toward the sides of said reaction chamber for optimizing the velocity profile of the reactant gas to insure a uniform deposition on the wafer.

14. A chemical vapor deposition system for processing a single wafer at a time comprising:

a reaction chamber including;

an elongated generally rectangular top panel;

a first generally rectangular bottom panel;

a second generally rectangular bottom panel, the planes of said top panel and said first and second bottom panels being substantially parallel to one another;

a pair of elongated side panels operatively connecting said top panel and said first and second bottom panels;

a front end having a reaction gas input;

a rear end having a spent gas output;

said first bottom panel extending from said front end to an intermediate portion of said reaction chamber, the height of the input end of reaction chamber being defined as the vertical distance between the planes of said top panel and said first bottom panel;

said second bottom panel extending from said intermediate portion of said reaction chamber to said rear end, the output end of said reaction chamber having a height defined as the vertical distance between the planes of said top panel and said second bottom panel wherein the height at said output end is substantially greater than the height at said input end;

an inwardly curved vertical wall operatively disposed at said intermediate portion for connecting said first and second bottom panels;

a susceptor for demountably positioning a single wafer to be processed;

means for operatively positioning said susceptor with respect to the plane of said first bottom panel to a position substantially coplanar with the plane of said first bottom panel and displaced a relatively small vertical distance above the plane of said first bottom panel for optimally positioning the single wafer carried by said susceptor in the flow of reaction gas from said reaction gas input; and

plate means operatively disposed on the interior surface of said first bottom panel and having a front edge at the front end of said reaction chamber and having a rear edge at a point just past said vertical wall for substantially reducing the amount of reactor gas which flows under said susceptor through a gap between said rear edge and said susceptor by narrowing the gap at the middle of said reaction chamber and widening the gap toward the sides of said reaction chamber.

15. The system of claim 14 further including means for rotating said susceptor.

16. The system of claim 14 wherein said Chemical Vapor Deposition System includes an epitaxial deposition system.

17. The system of claim 14 further including meand for manually adjusting the vertical height of said susceptor with respect to the plane of said first bottom panel.

18. The system of claim 17 further including means for rotating said susceptor.

19. The system of claim 14 wherein said plate means includes a generally planar, quartz plate having a pair of generally parallel opposite sides disposed adjacent said side panel of said reaction chamber, a relatively straight front end generally perpendicular to said pair of sides and operably disposed facing the front end of said reaction chamber, and an inwardly curved rear end adapted to overhang a portion of said vertical wall, said inwardly curved rear end ring shaped to be operably disposed about and at least partially around the outer peripheral edge of a portion of the circumference of said susceptor for forming the relatively narrow gap between the inwardly curved rear end of said plate means and a portion of the outer peripheral circumference of said susceptor.

20. The system of claim 19 wherein said inwardly curved rear end of said plate means encircles nearly 180°

of circumference of said susceptor.

21. The system of claim 19 wherein said inwardly curved rear end includes means for narrowing the gap in the center along the longitudinal axis of said reaction chamber and widening the gap as it extend away from the center toward said side panels.

22. The system of claim 19 wherein the plane of said quartz plate is parallel to the plane of said first bottom panel and wherein the relatively short rear end portion forming said inwardly curved rear end extends along the plane of said quartz plate horizontally past said vertical wall to overhang said second bottom panel and positioned closer to the outer peripheral circumference of said susceptor than said vertical wall.

23. The system of claim 14 including an extension portion of said first bottom panel extending horizontally past said vertical wall to overhang said second bottom panel, said extension portion being inwardly curved for positioning a portion of the outer peripheral circumference of said susceptor therein and to form the gap between the inwardly curved portion of said extension portion and the outer peripheral circumference of said susceptor for adjusting the velocity of the gas flow past said susceptor and provide a more uniform deposition on the single wafer.

24. The system of claim 23 wherein said inwardly curved portion of said extension substantially encircles nearly 180°

of circumference of the outer peripheral edge portion of said susceptor.

25. The system of claim 23 wherein the inwardly curved portion of said extension portion includes means for narrowing the gap along the longitudinal center of said reaction chamber and widening the gap in opposed directions toward said side panels.

26. An improved epitaxial deposition system including a reaction chamber operatively housing a circular susceptor for positioning only one circular wafer thereon for a single wafer at a time epitaxial deposition operation, the improvement comprising:

an elongated quartz envelope having an elongated, generally rectangular, substantially planar, horizontally disposed top panel, an elongated, generally rectangular, substantially planar, horizontally disposed bottom panel, the plane of said top panel being substantially parallel with the plane of said bottom panel, a pair of elongated, generally rectangular side panels disposed substantially parallel to one another and substantially parallel to the planes of said top and bottom panels for integrally connecting same to form an integral quartz envelope having a generally rectangular cross section, an elongated hollow interior, an open front end, and an open rear end;

means forming an aperture in an intermediate portion of said bottom panel;

a well means operatively communicating with said aperture in said bottom panel, said well means being vertically downwardly distended from said bottom panel and having a hollow cavity therein;

susceptor support means at least partially housed within the hollow cavity of said well means for supporting the susceptor proximate said aperture; and

a generally planar, rectangular quartz plate operably disposed on the interior surface of said bottom panel of the quartz envelope between the reactant gas inlet and said aperture;

an end of said quartz plate facing the susceptor being inwardly curved for receiving at least a portion of the circumference of the susceptor therein to establish a narrow gap therebetween; and

said inwardly curved end extending past the rim of said aperture to overhang at least a portion of said well means for reducing the width of the gap and reduce the area for the reactant gas to pass into said well means and beneath the susceptor.

27. The improved system of claim 26 further including means for manually adjusting the vertical height of the susceptor with respect to said aperture.

28. The improved system of claim 26 further including means for rotating the susceptor to average out deposition irregularities and insure a uniform deposition across the surface of the wafer.

29. The improved system of claim 26 wherein said inwardly curved end substantially narrows the gap at a central portion along the longitudinal axis of said reaction chamber and widens the gap as it extends outwardly therefrom towards said side panels for shaping the velocity profile of the reactant gas to insure a more uniform deposit on the wafer while substantially reducing the amount of the reactant gas which can pass into the area below the susceptor.

30. The improved system of claim 26 wherein the end portion of said bottom panel adjacent said aperture includes an extension portion operatively disposed over said well means, said extension portion including an edge curved inwardly to receive at least a portion of the circumference of the susceptor therewithin for defining the gap between said extension portion and the susceptor and decreasing the effective distance between said bottom panel and the susceptor to reduce the amount of reactant gas which can pass into said well means and beneath the susceptor.

31. A chemical vapor deposition apparatus for processing a wafer, said apparatus comprising in combination:

(a) a reaction chamber, said reaction chamber having an inlet and an outlet for receiving and exhausting, respectively, a reactant gas and a bottom panel extending downstream of said inlet, said bottom panel including extension means extending downstream to overhang a well and terminating at a terminal edge;

(b) a susceptor for supporting the wafer during processing within said reaction chamber, said susceptor being disposed downstream of said terminal edge;

(c) a horizontal gap of a varying width disposed between said terminal edge and the circumference of said susceptor, said terminal edge being configured to define the contour of the gap to control the velocity profile of the flow of the reactant gas across the wafer;

(d) said well disposed proximate said terminal edge for receiving said susceptor;

(e) means for locating said susceptor vertically with respect to said bottom panel; and

(f) means for periodically purging said reaction chamber.

32. The chemical vapor deposition apparatus as set forth in claim 31 wherein said terminal edge defines an increase of the gap in each lateral direction from an upstream most point on the perimeter of said susceptor.

33. The chemical vapor deposition apparatus as set forth in claim 32 wherein said terminal edge is configured to expand the gap non linearly in opposed directions.

34. The chemical vapor deposition apparatus as set forth in claim 31 wherein said extension means comprises a quartz plate circumference of said susceptor and defining a horizontal gap.

35. The chemical vapor deposition apparatus as set forth in claim 31 wherein said locating means locates said susceptor at a height within said reaction chamber to locate the wafer substantially in the plane defined by said bottom panel.

36. The chemical vapor deposition apparatus as set forth in claim 31 wherein said well extends downstream to said outlet.

37. The chemical vapor deposition apparatus as set forth in claim wherein the interior height of said reaction chamber upstream of said well is on the order of one half of the interior height of said reaction chamber downstream of said well.

38. The chemical vapor deposition apparatus as set forth in claim 37 wherein said terminal edge is configured to contour the gap to control the velocity profile of the flow of the reactant gas across the wafer by increasing the gap in each lateral direction from an upstream most point on the circumference of said susceptor.

39. The chemical vapor deposition apparatus as set forth in claim 37 wherein said extension means comprises a quartz plate, and wherein said terminal end is configured to countour the gap to expand in width laterally in opposed directions from an upstream most point on the circumference of said susceptor to control the velocity profile of the flow of the reactant gas across the wafer.