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Process and apparatus for detecting aberrations in production process operations

  • US 4,846,928 A
  • Filed: 07/22/1988
  • Issued: 07/11/1989
  • Est. Priority Date: 08/04/1987
  • Status: Expired due to Term
First Claim
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1. A method of monitoring end-point traces of a plasma etch reactor comprising:

  • establishing a reference end-point trace for a predetermined etch process;

    dividing the reference end-point trace into predefined regions;

    conducting the predetermined etch process on a semiconductor device;

    obtaining an actual end-point trace for the etch of the semiconductor device;

    dividing the actual end-point trace into candidate regions in accordance with predefined criteria based on changes in said actual trace;

    matching candidate regions of the actual end-point trace with corresponding regions of the reference end-point trace by analyzing characteristics of a candidate region of the actual end-point trace over characteristics of a region of the reference end-point trace to be matched; and

    comparing characteristics of regions of the actual end-point trace with corresponding characteristics of matched regions of the reference end-point trace.

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