Process and apparatus for detecting aberrations in production process operations
First Claim
1. A method of monitoring end-point traces of a plasma etch reactor comprising:
- establishing a reference end-point trace for a predetermined etch process;
dividing the reference end-point trace into predefined regions;
conducting the predetermined etch process on a semiconductor device;
obtaining an actual end-point trace for the etch of the semiconductor device;
dividing the actual end-point trace into candidate regions in accordance with predefined criteria based on changes in said actual trace;
matching candidate regions of the actual end-point trace with corresponding regions of the reference end-point trace by analyzing characteristics of a candidate region of the actual end-point trace over characteristics of a region of the reference end-point trace to be matched; and
comparing characteristics of regions of the actual end-point trace with corresponding characteristics of matched regions of the reference end-point trace.
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Abstract
An improved apparatus and process for detecting aberrations in production process operations is provided. In one embodiment, operations of a plasma etch reactor (10) are monitored to detect aberrations in etching operations. A reference end-point trace (EPT) is defined (62) for the etch process. Regions are defined in the reference end-point trace (70) and characteristics and tolerances for each region are defined (72-80). The etcher is run and an actual EPT is obtained (82) from the running of the etcher. The actual EPT is analyzed to identify proposed regions of the actual EPT (86), and then the proposed regions of the actual EPT are matched with regions of the reference EPT (96). The system employs a series of heuristic functions in matching proposed regions of the actual EPT with regions of the reference EPT. Characteristics of the matched regions of the actual end-point trace are compared (66) with characteristics of the corresponding regions of the reference end-point trace to determine whether aberrations have occurred during the etch process. The invention provides for an improved matching and improved comparison of actual end-point traces with reference end-point traces.
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Citations
39 Claims
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1. A method of monitoring end-point traces of a plasma etch reactor comprising:
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establishing a reference end-point trace for a predetermined etch process; dividing the reference end-point trace into predefined regions; conducting the predetermined etch process on a semiconductor device; obtaining an actual end-point trace for the etch of the semiconductor device; dividing the actual end-point trace into candidate regions in accordance with predefined criteria based on changes in said actual trace; matching candidate regions of the actual end-point trace with corresponding regions of the reference end-point trace by analyzing characteristics of a candidate region of the actual end-point trace over characteristics of a region of the reference end-point trace to be matched; and comparing characteristics of regions of the actual end-point trace with corresponding characteristics of matched regions of the reference end-point trace. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 27)
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11. A method of monitoring operations in process equipment which carries out a predetermined process, which process is first monitored by a detector which provides a continuously variable signal curve corresponding to the progress of the process, and wherein a reference continuously variable signal curve can be defined which corresponds to a predefined acceptable operation of the predetermined process, the method comprising:
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defining a reference continuously variable signal curve for the predetermined process; defining characteristics for at least one region of said reference continuously variable signal curve; conducting said predetermined process; acquiring from the detector an actual continuously variable signal curve corresponding to the progress of the process conducted; dividing the actual continuously variable signal curve acquired into candidate regions on the basis of changes in characteristics of the actual continuously variable signal curve; matching candidate regions of the actual continuously variable signal curve with regions of reference continuously variable signal curve by analyzing characteristics of the candidate region of the actual continuously variable signal curve over characteristics of a region of the reference continuously variable signal curve to be matched; comparing characteristics of at least one of the regions of the actual continuously variable signal curve with the characteristics of a matched region in the reference continuously variable signal curve; and generating a signal indicative of the variance of a characteristic of one of the regions of the actual continuously variable signal curve beyond predefined limits from a corresponding characteristic of a matched region of the reference continuously variable signal curve. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 26)
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12. A method of monitoring end-point traces of a plasma etch reactor comprising:
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establishing a reference end-point trace for a predetermined etch process; dividing the reference end-point trace into predefined regions; conducting the predetermined etch process on a semiconductor device; obtaining an actual end-point trace for the etch of the semiconductor device; dividing the actual end-point trace into candidate regions in accordance with predefined criteria based on changes in said actual trace; and matching candidate regions of the actual end-point trace with corresponding regions of the reference end-point trace by analyzing characteristics of a candidate region of the actual end-point trace over characteristics of a region of the reference end-point trace to be matched.
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25. The method of cliam 18, wherein said predetermined process comprises a plasma etch.
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28. A method of monitoring end-point traces of a plasma etch reactor comprising:
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establishing a reference end-point trace for predetermined etch process; identifying critical points in the reference end-point trace; identifying regions of said reference end-point trace between said critical points; conducting the predetermined etch process on a semiconductor device; obtaining an actual end-point trace for the etch of the semiconductor device; identifying candidate critical points in the actual end-point trace on the basis of changes in slope of the actual end-point trace; dividing the actual end-point trace into candidate regions between said candidate critical points; matching candidate regions of the actual end-point trace with regions of the reference end-point trace; comparing at least one characteristic of at least one region of the actual end-point trace with a corresponding characteristic of a corresponding region of the reference end-point trace; and generating an indication if said at least one characteristic of the said at least one region of the actual end-point trace varies beyond a predefined limit from the corresponding characteristic of the corresponding region of the reference end-point trace. - View Dependent Claims (29, 30, 31, 32, 33)
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34. A process monitoring apparatus comprising:
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a data storer for receiving reference data representing a reference continuously variable signal curve corresponding to a predefined process; an acquirer for acquiring actual data representing an actual continuously variable signal curve corresponding to an actual operation of said predefined process; a processor which divides the actual data into candidate regions based on changes in characteristics of the actual data; a matcher which matches at least one candidate region of the actual data with a region of the reference data by analyzing characteristics of the candidate region over characteristics of at least one region of the reference data; a comparer for comparing characteristics of at least one region of the actual data with characteristics of a region of the reference data with which the region of the actual data has been matched; and a generator which generates a signal indicative of the variance of a characteristic of a region of the actual data beyond a predefined limit from a corresponding characteristic of a region of the reference data which has been matched with the region of the actual data. - View Dependent Claims (35, 36, 37, 38)
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39. A process monitoring apparatus comprising:
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a data storer for receiving reference data representing a reference continuously variable signal curve corresponding to a plasma etch process; an acquirer for acquiring actual data representing an actual continuously variable signal curve corresponding to an actual operation of said plasma etch process; a processor which divides the actual data into candidate regions based on changes in characteristics of the actual data; and a matcher which matches at least one candidate region of the actual data with a region of the reference data by analyzing characteristics of the candidate region over characteristics of at least one region of the reference data.
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Specification