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Apparatus and methods for ion implantation

  • US 4,847,504 A
  • Filed: 02/24/1986
  • Issued: 07/11/1989
  • Est. Priority Date: 08/15/1983
  • Status: Expired due to Term
First Claim
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1. In a system for implanting ions into a target element, ion source means including an ion exit aperture means through which generated ions may freely pass and being electrically biased to a preanalysis acceleration voltage;

  • an extraction electrode means positioned in the vicinity of said ion exit aperture means and biased to a voltage value relative to said preanalysis acceleration voltage to extract and accelerate ions from said ion source means; and

    a deceleration electrode means positioned downstream of said extraction electrode means and being biased to a voltage relative to said extraction voltage value, the voltage value of the deceleration electrode means relative to the extraction electrode means being of the same order of magnitude as the voltage value of the extraction electrode means relative to the preanalysis acceleration electrode means, substantially to decrease the velocity of ions passing through the region between said extraction electrode means and said deceleration electrode means.

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