Apparatus and methods for ion implantation
First Claim
1. In a system for implanting ions into a target element, ion source means including an ion exit aperture means through which generated ions may freely pass and being electrically biased to a preanalysis acceleration voltage;
- an extraction electrode means positioned in the vicinity of said ion exit aperture means and biased to a voltage value relative to said preanalysis acceleration voltage to extract and accelerate ions from said ion source means; and
a deceleration electrode means positioned downstream of said extraction electrode means and being biased to a voltage relative to said extraction voltage value, the voltage value of the deceleration electrode means relative to the extraction electrode means being of the same order of magnitude as the voltage value of the extraction electrode means relative to the preanalysis acceleration electrode means, substantially to decrease the velocity of ions passing through the region between said extraction electrode means and said deceleration electrode means.
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Abstract
A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.
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Citations
31 Claims
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1. In a system for implanting ions into a target element, ion source means including an ion exit aperture means through which generated ions may freely pass and being electrically biased to a preanalysis acceleration voltage;
- an extraction electrode means positioned in the vicinity of said ion exit aperture means and biased to a voltage value relative to said preanalysis acceleration voltage to extract and accelerate ions from said ion source means; and
a deceleration electrode means positioned downstream of said extraction electrode means and being biased to a voltage relative to said extraction voltage value, the voltage value of the deceleration electrode means relative to the extraction electrode means being of the same order of magnitude as the voltage value of the extraction electrode means relative to the preanalysis acceleration electrode means, substantially to decrease the velocity of ions passing through the region between said extraction electrode means and said deceleration electrode means. - View Dependent Claims (2)
- an extraction electrode means positioned in the vicinity of said ion exit aperture means and biased to a voltage value relative to said preanalysis acceleration voltage to extract and accelerate ions from said ion source means; and
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3. In a system for implanting ions into a target element, ion source means for producing an ion beam;
- beam analyzing means for receiving said ion beam and separating various ion species in said beam on the basis of mass to produce an analyzed beam; and
beam resolving means disposed in the path of said analyzed beam for permitting a preselected ion species to pass to said target element;
said beam resolving means comprising a plurality of beam resolving elements each having a resolving aperture, and means for selectively positioning one of said beam resolving elements in the path of said analyzed beam. - View Dependent Claims (4, 5, 6)
- beam analyzing means for receiving said ion beam and separating various ion species in said beam on the basis of mass to produce an analyzed beam; and
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7. In a system for implanting ions into a target element, ion source means for producing an ion beam;
- beam analyzing means for receiving said ion beam and selectively separating various ion species in said beam on the basis of mass to product an analyzed beam exiting said analyzing means, and beam resolving means disposed in the path of said analyzed beam for permitting a preselected ion species to pass to said target element;
said ion source means comprising an ion source arc chamber having a front plate with a rectangualr ion exit aperture therein, an extraction electrode means mounted in front of said ion exit aperture means and electrically biased with respect to said front plate to extract a beam of ions from said ion source arc chamber through said ion exit aperture means, said ion exit aperture means having a width substantially greater than three millimeters such that a high current beam of ions is extracted from said ion source arc chamber. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
- beam analyzing means for receiving said ion beam and selectively separating various ion species in said beam on the basis of mass to product an analyzed beam exiting said analyzing means, and beam resolving means disposed in the path of said analyzed beam for permitting a preselected ion species to pass to said target element;
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18. In a system for implanting ions into a target element, ion source means for producing an ion beam;
- beam analyzing means for receiving said ion beam and selectively separating various ion species in said beam on the basis of mass to produce an analyzed beam exiting said analyzing means, and beam resolving means disposed in the path of said analyzed beam for permitting a preselected ion species to pass to said target element, said ion source means including a source chamber housing and an electrode module and a source module mounted within said housing;
said source module comprising a source mounting flange, an ion source carried on said source mounting flange, and a source insulator carried on said source mounting flange and being removably mounted along with said source mounting flange to said electrode module mounting flange such that said ion source module comprises a separately removable module. - View Dependent Claims (19, 20, 21, 22)
- beam analyzing means for receiving said ion beam and selectively separating various ion species in said beam on the basis of mass to produce an analyzed beam exiting said analyzing means, and beam resolving means disposed in the path of said analyzed beam for permitting a preselected ion species to pass to said target element, said ion source means including a source chamber housing and an electrode module and a source module mounted within said housing;
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23. In a method for operating an ion source system comprising an ion source having an ion emitting region, an extraction electrode positioned in the vicinity of said ion emitting region, and a second electrode positioned substantially adjacent said extraction electrode, the steps of:
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applying a preanalysis acceleration voltage to said ion source; applying to said extraction electrode a bias potential having a value relative to said preanalysis acceleration voltage to extract and accelerate ions from said source; and applying to said second electrode a bias potential having a value relative to said bias potential value on said extraction electrode of the same order of magnitude as the value of the bias potential on the extraction electrode relative to the preanalysis acceleration voltage, to reduce substantially the velocity of ions travelling between said extraction electrode and said second electrode. - View Dependent Claims (24)
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25. In a method for implanting ions of substantially a single preselected ions species into a target element, the steps of:
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generating an ion beam of substantially uniform velocity and having a plurality of ion species therein, including said preselected ion species; analyzing said ion beam to separate ions having different values of charge to mass ratio into different beam paths; selecting from a group of beam resolving elements a particular beam resolving element; and positioning said selected beam resolving element in the path of the ion beam of said preselected ion species to pass said ions to said target element.
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26. In an ion source system, a source chamber with an elongated ion exit aperture in one wall thereof;
- an elongated filament-cathode disposed lengthwise within said source chamber;
means applying a current generating electrical potential difference across said filament-cathode;
means applying an arc creating bias between said chamber and said filament-cathode to generate ions within said chamber; and
means applying a magnetic field parallel to said filament-cathode with a non-uniform field strength to counteract non-uniform ion generating characteristics from one end of said source to the other.
- an elongated filament-cathode disposed lengthwise within said source chamber;
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27. In an ion source system, a source chamber with an elongated ion exit aperture formed in one wall thereof;
- an elongated filament-cathode disposed lengthwise within said source chamber and substantially parallel to said aperture;
a plurality of separate anode elements mounted within said source chamber with electrical isolation therebetween; and
means for applying separate bias voltages to said separate anode structures for independent control of the ion current generated in the vicinity of each of said anode structures. - View Dependent Claims (28)
- an elongated filament-cathode disposed lengthwise within said source chamber and substantially parallel to said aperture;
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29. In a method for generating an ion beam of selecting energy for an ion implantation system, the steps of:
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creating a plasma of ions within a generally confined volume; extracting a beam of ions from said plasma with an accelerating voltage; and decelerating said beam of ions with a substantial decelerating voltage relative to said accelerating voltage, said deceleration voltage being of the same order of magnitude as said accelerating voltage. - View Dependent Claims (30)
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31. In a method for implanting ions of substantially a single preselected ion species into a target element, the steps of:
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generating an ion beam having a plurality of ion species therein, including said preselected ion species; analyzing said ion beam to separate ions having different values of charge to mass ratio into different focused ion beam paths; and passing the focused ion beam of said preselected ion species through a preselected one of a plurality of beam resolving elements into said target element.
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Specification