Formation of oxide films by reactive sputtering

• US 4,849,081 A
• Filed: 06/22/1988
• Issued: 07/18/1989
• Est. Priority Date: 06/22/1988
• Status: Expired due to Fees

• Current Assignee: BOC Group Pty Limited (Linde Plc)
• Original Assignee: BOC Group Pty Limited (Linde Plc)
• Inventors: Ross, Randall G.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/209,766
• Time in Patent Office: 391 Days
• Field of Search: 204/192.15, 204/192.16, 204/192.22, 204/192.23, 204/192.26, 204/192.27, 204/192.28, 204/192.29
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/0057 using reactive gases other than O2, H2O, N2, NH3 or CH4
• CPC Class Codes: C23C 14/081 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/10 Glass or silica

Abstract

In reactive sputtering of silicon, titanium, aluminum or tin in an oxygen-containing atmosphere to deposit a layer of the corresponding oxide on a substrate, the deposition rate is markedly enhanced by addition of chlorine to the atmosphere. The resulting films contain at most minor amounts of chlorine, so that mechanical, chemical and optical properties of the films are not substantially altered by use of chlorine in the process.

Claims

1. A method of making an oxide film comprising the steps of providing a target including a metal or metalloid element selected from the group consisting of Si, Ti, Al, Sn and combinations thereof, providing a substrate in proximity to said target, exposing a surface of said target to a plasma containing oxygen and chlorine and maintaining said target at a sputtering potential with respect to said plasma so that material is dislodged from said exposed target surface and deposited on said substrate.

2. A method as claimed in claim 1 wherein said target consists essentially of said metal or metalloid element and combinations thereof.

3. A method as claimed in claim 2 wherein said metal or metalloid element is a single element selected from the group consisting of Si, Ti, Al, and Sn.

4. A method as claimed in claim 1 wherein said metal or metalloid element is Si.

5. A method as claimed in claim 1 wherein said metal or metalloid element is Ti.

6. A method as claimed in claim 1 wherein said step of exposing said target to a plasma includes the steps of supplying a plasma-forming gas including oxygen and chlorine and converting said gas to said plasma.

7. A method as claimed in claim 6 wherein said plasma-forming gas includes a first gaseous species containing oxygen and a second gaseous species containing chlorine, the method further comprising the step of controlling the proportion of chlorine to oxygen in said plasma by controlling the proportion of said first and second species in said plasma-forming gas.

8. A method as claimed in claim 7 wherein said chlorine-containing species includes a compound containing both carbon and chlorine.

9. A method as claimed in claim 8 wherein said compound is selected from the group consisting of chlorinated hydrocarbons having fewer than 4 carbon atoms.

10. A method as claimed in claim 8 wherein said compound is CCl₄.

11. A method as claimed in claim 7 wherein said oxygen-containing species is O₂.

12. A method as claimed in claim 7 wherein said plasma-forming gas further includes a noble gas.

13. A method as claimed in claim 12 wherein said noble gas is argon.

14. A method as claimed in claim 6 wherein said plasma-forming gas is substantially free of fluorine.

15. A method as claimed in claim 6 wherein said plasma-forming gas is substantially free of hydrogen.

16. A method as claimed in claim 1 further comprising the step of substantially isolating said substrate from said plasma.

17. A method as claimed in claim 1 further comprising the step of maintaining a film of an oxide of said metal or metalloid element on said exposed surface of said target during said step of exposing said target to said plasma.