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Resonant tunneling transistor

  • US 4,849,799 A
  • Filed: 08/18/1986
  • Issued: 07/18/1989
  • Est. Priority Date: 07/31/1986
  • Status: Expired due to Term
First Claim
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1. A heterostructure bipolar device comprising:

  • an emitter region having a first conductivity type and a first composition and bandgap profile;

    a base region having a second conductivity type and a second composition and bandgap profile;

    a collector region having said first conductivity type and having a third composition and bandgap profile;

    first, second, and third electrical contracts to said emitter, base, and collector regions, respectively;

    a quantum well between said collector region and said electrical contact to said emitter region, said quantum well being the only quantum well between said collector region and said electrical contact to said emitter region.said device being capable of operating such that there are first and third base-emitter voltages and a second base-emitter voltage intermediary to said first and third base-emitter voltages such that, at said first, second, and third base-emitter voltages, the bottom of the conduction band in at least a portion of said emitter region is blow, at, and above, respectively, a quantum resonance of said quantum well, said portion being between said first electrical and said quantum well.

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