Semiconductor light position detector for rangefinder

• US 4,850,692 A
• Filed: 06/19/1986
• Issued: 07/25/1989
• Est. Priority Date: 06/27/1985
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Tanaka, Hiromichi, Hataji, Shinji, Asakura, Hiroyuki, Ono, Shusuke, Nagaoka, Yoshitomi, Kuga, Ryuichiro, Hirao, Yoshiaki
• Primary Examiner(s): Buczinski, Stephen C.
• Assistant Examiner(s): Wallace, Linda J.
• Application Number:
  US06/876,203
• Time in Patent Office: 1,132 Days
• Field of Search: 356/1, 356/4, 354/403, 250/214 B, 250/201 PF, 250/237 R
• US Class Current: 356/3.04
• CPC Class Codes: G01C 3/10 using a parallactic triangle with variable angles and a base of fixed length in the observation station, e.g. in the instrument
• CPC Class Codes: G01S 17/48 Active triangulation systems, i.e. using the transmission and reflection of electromagnetic waves other than radio waves
• CPC Class Codes: G01S 7/4816 of receivers alone
• CPC Class Codes: G01S 7/4912 Receivers
• CPC Class Codes: G02B 7/32 using active means, e.g. light emitter including both an active and a passive focus detecting device G02B7/285; using ultrasound G02B7/40
• CPC Class Codes: H01L 31/02024 Position sensitive and lateral effect photodetectors; Quadrant photodiodes
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Abstract

A semiconductor light position detector for a rangefinder which projects a light beam onto an object and receives a reflected light beam from the object to measure a distance to the object. A portion of the light-receiving surface of the detector on which the reflected beam will not form a light spot is partially covered with a member that blocks unwanted light. Thus, the malfunctions caused by the flare component of the light from the light projector and the malfunctions due to increases in the shot noise under a high illuminance are reduced greatly.

Claims

1. A semiconductor light position detector for a rangefinder which projects a light beam onto an object, receives a light beam reflected from the object, and calculates a distance to the object from a position of a light spot formed by the reflected light beam on a light-receiving surface of the detector, the position of the light spot being variable within an effective light-receiving area on the light-receiving surface according to the distance to the object with a center point of the light spot being formed at different points along a length of the light-receiving surface, each of the points corresponding to a different distance to the object, characterized in that a part of the light-receiving surface of the position detector is covered with a light-blocking member outside of the effective light-receiving area on which a light spot formed by the reflected beam will be formed.

2. The semiconductor light position detector as set forth in claim 1, wherein the light-receiving surface is covered with a protective film made of a nonconductive material except for electrode portions, and wherein the light-blocking member is formed on the protective film.

3. The semiconductor light position detector as set forth in claim 1, wherein the light-blocking member is a film made of aluminum.

4. The semiconductor light position detector as set forth in claim 2, wherein the light-blocking member is formed by extending electrodes of the detector.

5. The semiconductor light position detector as set forth in claim 1, wherein the light-blocking member blocks light having a wavelength longer than 400 nm.

6. A semiconductor light position detector for a rangefinder for measuring a distance to an object, comprising:

a PIN photodiode having a light-receiving surface on which a reflected light beam from the object will form a light spot, the light spot being formed at a position which is variable within an effective light-receiving area on the light-receiving surface according to the distance to the object with a center point of the light spot being formed at different points along a length of the light-receiving surface, each of the points corresponding to a different distance to the object;

electrodes formed on both ends of the light-receiving surface for taking out photocurrents produced by the PIN photodiode; and

a light-blocking member formed on the light-receiving surface at a part outside of said effective light-receiving area.

7. The semiconductor light position detector as set forth in claim 6, further comprising a transparent protective film made of an electrically nonconductive material formed between the light-receiving surface and the light-blocking member.

8. The semiconductor light position detector as set forth in claim 7, wherein the light-blocking member is formed integrally with at least one of the electrodes.

9. The semiconductor light position detector as set forth in claim 6, wherein the light-blocking member blocks light having a wavelength longer than 400 nm.

10. A semiconductor light position detector for a rangefinder which projects a light beam onto an object, receives a light beam reflected from the object, and calculates a distance to the object from a position of a light spot formed by the reflected light beam on a light-receiving surface of the detector, the position of the light spot being variable within an effective light-receiving area on the light-receiving surface according to the distance to the object with a center point of the light spot being formed at different points along a length of the light-receiving surface, each of the points corresponding to a different distance to the object, characterized in that part of the light-receiving surface of the position detector is covered with a light-blocking member which is fixed with respect to the light-receiving surface, the blocking member covering only the part of the light-receiving surface outside of the effective light-receiving area.

11. The semiconductor light position detector as set forth in claim 10, wherein the light-receiving surface is covered with a protective film made of a nonconductive material except for electrode portions, and wherein the light-blocking member is formed on the protective film.

12. The semiconductor light position detector as set forth in claim 10, wherein the light-blocking member is a film made of aluminum.

13. The semiconductor light position detector as set forth in claim 11, wherein the light-blocking member is formed by extending electrodes of the detector.

14. The semiconductor light position detector as set forth in claim 10, wherein the light-blocking member blocks light having a wavelength longer than 400 nm.