Resonant accelerometer

• US 4,851,080 A
• Filed: 12/14/1988
• Issued: 07/25/1989
• Est. Priority Date: 06/29/1987
• Status: Expired due to Term

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Howe, Roger T., Chang, Shih-Chia
• Primary Examiner(s): Levy, Stewart J.
• Assistant Examiner(s): Bell, Robert P.
• Application Number:
  US07/285,347
• Time in Patent Office: 223 Days
• Field of Search: 73/517 AV, 73/DIG. 1, 73/505, 73/517 R, 357/26, 156/657, 156/647, 156/662, 148/DIG. 159, 437/225, 437/921
• US Class Current: 438/53
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/097 by vibratory elements
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/084 the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

An accelerometer is provided by a sample mass suspended in a central area of a support by pairs of resonating arms. One pair of arms lies on one axis through the sample mass. Another pair of arms lies on a second axis through the sample mass perpendicular to the one axis. Acceleration of the mass and support is detected by a measured change in resonant frequency of the arms of a pair. The measured change in resonant frequency is the magnitude of the acceleration and the axis along which the pair of arms lies provides the direction of the acceleration. Orthogonal components of acceleration are simultaneously measured by the pairs of arms lying on perpendicular axes. Electrostatic force-rebalance techniques and other known techniques for measuring acceleration in a direction perpendicular to the axes of the pairs of arms are readily incorporated to provide a third direction measurement of acceleration. The accelerometer is fabricated in a monolithic process which employs micromachining techniques.

Claims

1. A method of fabricating a monolithic accelerometer, the steps comprising:

forming a sandwich of films on one side of a substrate by thin-film deposition and patterning, the sandwich of films comprising a structural thin film over a sacrificial thin film on the one side of the substrate;

patterning the structural thin film into, arms on the sacrificial thin film on the one side of the substrate;

through a side opposite the one side of the substrate, chemically etching a portion of the substrate between the one side and opposite side to form a body of weight in the substrate which is symmetrically aligned with the arms, the body of weight being connected to the substrate by portions of the sandwich of films; and

selectively removing the sacrificial thin film by chemical etching, leaving the arms suspending the weight from the substrate.

2. A method as claimed in claim 1 further comprising the steps of:

depositing a sacrificial layer over the arms;

forming drive and sense electrodes over the sacrificial layer; and

removing the sacrificial layer to form a gap between the arms and the drive and sense electrodes.

3. A method as claimed in claim 1 further including the step of:

forming constraining arms in the side opposite the one side of the substrate from regions of the substrate adapted to be impervious to the step of chemically etching to form the body of weight, the constraining arms attached to the weight to prevent rotation of the weight.

4. A method as claimed in claim 1 wherein the structural thin film comprises polysilicon and the sacrificial thin film is an oxide film.

5. A method as claimed in claim 1 wherein the step of selectively removing the sacrificial thin films includes silicon micromachining to isolate the body of weight and surface micromachining to free central areas of the arms.

6. A method as claimed in claim 2 wherein

the step of depositing a sacrificial layer over the arms includes depositing silicon oxide;

and

the step of forming sense electrodes includes depositing a layer of polycrystalline silicon on the silicon oxide layer and forming the drive and sense electrodes therein.

7. A method of fabricating a monolithic accelerometer, the steps comprising:

patterning a first structural layer into arms on one side of the substrate;

through a side opposite the one side of the substrate shaping a portion of the substrate between the one side and opposite side to form a body of a weight in the substrate and symmetrically aligned with the arms;

isolating the weight and central areas of the arms from the substrate by chemical etching, leaving the arms suspending the weight from the substrate;

depositing a sacrificial layer over the arms;

forming drive and sense electrodes over the sacrificial layer; and

removing the sacrificial layer to form a gap between the arms and the drive and sense electrodes.

8. A method as claimed in claim 7 wherein

the step of depositing a sacrificial layer over the arms includes depositing silicon oxide;

and

the steps of forming sense electrodes includes depositing a layer of polycrystalline silicon on the silicon oxide layer and forming the drive and sense electrodes therein.