Stop for integrated circuit diaphragm

• US 4,852,408 A
• Filed: 09/03/1987
• Issued: 08/01/1989
• Est. Priority Date: 09/03/1987
• Status: Expired due to Fees

• Current Assignee: Adalet / Scott Fetzer Company, The Scott Fetzer Company (Berkshire Hathaway Incorporated)
• Original Assignee: The Scott Fetzer Company (Berkshire Hathaway Incorporated)
• Inventors: Sanders, Gary G.
• Primary Examiner(s): Woodiel, Donald O.
• Application Number:
  US07/092,608
• Time in Patent Office: 698 Days
• Field of Search: 73/718, 73/724, 73/721, 73/727, 73/706, 73/715, 73/754, 73/DIG. 4, 29/610 SG, 92/103 SD, 361/283, 338/4
• US Class Current: 73/718
• CPC Class Codes: G01L 19/0618 Overload protection
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: G01L 9/0075 using a ceramic diaphragm, e.g. alumina, fused quartz, glass
• CPC Class Codes: Y10T 29/49103 Strain gauge making

Abstract

A semiconductor transducer with a diaphragm is constructed utilizing a substrate wherein a first portion of that first face is etched to a planar level to achieve a second portion as a physical stop on this substrate, the physical stop having a planar stop face, a sloping sided cavity is etched into a semiconductor wafer from a first face thereof to form a deformable diaphragm in this semiconductor wafer. The semiconductor wafer is anodically bonded to the substrate planar level, with the physical stop located in the cavity and with the stop face acting to prohibit excess movement of the diaphragm. The foregoing abstract is merely a resume of one general application, is not a complete discussion of all principles of operation or applications, and is not to be construed as a limitation on the scope of the claimed subject matter.

Claims

1. A semiconductor transducer comprising, in combination:

a semiconductor base having first and second planar parallel faces;

a cavity formed in said base from said first face to form a deformable diaphragm unitary with said base;

a substrate having a planar surface bonded to said first face of said base;

a physical stop and locator means integral with and carried by said substrate and positioned in said cavity; and

said physical stop and locator means having a stop face substantially parallel to and positioned closely adjacent to said diaphragm to be contactable by said diaphragm upon excessive excursion to prevent rupture thereof, and having lateral sides cooperable with the side walls of said cavity for location within the cavity.

2. A transducer as set forth in claim 1, wherein said diaphragm is positioned closely adjacent to said second face.

3. A transducer as set forth in claim 1, wherein said stop face is of a semiconductor of the same type of material as said semiconductor base.

4. A transducer as set forth in claim 3, wherein said cavity has sloping sides determined by a single crystalline structure of said semiconductor base.

5. A transducer as set forth in claim 1 including an integrated circuit formed on said second face of said semiconductor;

and

electrical components on said diaphragm connected to said integrated circuit.

6. A transducer as set forth in claim 1, including an anodic bond between said semiconductor base and said substrate.

7. A transducer as set forth in claim 1, wherein said physical stop and locator means is unitary with said substrate.

8. A transducer as set forth in claim 7, wherein said substrate is a glass material and said physical stop and locator means has curved sides in said cavity.

9. A transducer as set forth in claim 1, wherein said physical stop and locator means has a base mounted on said substrate which is of larger area than said stop face for physical stability of said physical stop and locator means.

10. A transducer as set forth in claim 1, including orienting means for orienting said semiconductor base on said substrate with said physical stop and locator means being a part of said orienting means.

11. A semiconductor transducer comprising, in combination:

a semiconductor base having first and second planar parallel faces;

a cavity formed in said base from said first face to form a deformable diaphragm unitary with said base;

a substrate having a planar surface bonded to said first face of said base;

a physical stop integral with and carried by said substrate and positioned in said cavity;

said physical stop having a stop face substantially parallel to and positioned closely adjacent to said diaphragm to be contactable by said diaphragm upon excessive excursion to prevent rupture thereof;

a second substrate bonded to said second face of said base; and

a second stop face on said second substrate acting to restrain excessive excursion of said diaphragm in the opposite direction.

12. A transducer as set forth in claim 11, wherein said diaphragm has one surface thereof planar with said second face, and said second stop face is recessed in said second substrate.

13. A transducer as set forth in claim 11, wherein said second substrate is bonded to said second face in a U-shaped area.

14. A transducer as set forth in claim 11, wherein said second substrate is bonded to said second face in an annular area surrounding said diaphragm.

15. A semiconductor transducer comprising, in combination:

a semiconductor base having first and second planar parallel faces;

a cavity formed in said base from said first face to form a deformable diaphragm unitary with said base, said cavity having sloping sides determined by a single crystalline structure of said semiconductor base;

a substrate having a planar surface bonded to said first face of said base;

a physical stop integral with and carried by said substrate and positioned in said cavity, said physical stop having sloping sides substantially parallel to the sloping sides of said cavity; and

said physical stop having a stop face substantially parallel to and positioned closely adjacent to said diaphragm to be contactable by said diaphragm upon excessive excursion to prevent rupture thereof.

16. A method of forming a semiconductor transducer with a diaphragm, comprising the steps of:

providing a substrate having a first face;

establishing physical stop and locator means including first etching a first portion of said first face of said substrate to a substantially planar level to achieve a second portion as a physical stop on said substrate;

said physical stop having a substantially planar stop face and an enlarged base at said planar level;

providing a semiconductor base having parallel first and second planar faces;

etching a sloping sided cavity into said semiconductor base from said first face thereof to form a deformable diaphragm in said semiconductor base; and

bonding said semiconductor base first face to said substrate planar level with said physical stop located in said cavity as means to locate said physical stop laterally in said cavity and with said stop face acting to prohibit excess movement of said diaphragm.

17. The method as set forth in claim 16, wherein said substrate is a composite of a semiconductor wafer and a second material adhered together at said planar level;

and

said first etching step terminating at the planar level junction of said semiconductor wafer and said second material.

18. The method as set forth in claim 17, wherein said second material is glass.

19. The method as set forth in claim 17, wherein said first and second etching steps result in sloping sides of the physical stop and cavity, respectively.

20. The method as set forth in claim 16, wherein said substrate is a one-piece body and said first etching step is terminated part way through said one-piece body at said planar level.

21. The method as set forth in claim 20, wherein said one-piece body is of a glass material.

22. The method as set forth in claim 20, wherein said first etching step establishes curved sides of said physical stop.