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Process for manufacture of a semiconductor memory device

  • US 4,853,348 A
  • Filed: 12/22/1987
  • Issued: 08/01/1989
  • Est. Priority Date: 12/05/1984
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor memory device having a capacitor, comprising the steps of:

  • (a) forming a substrate of a first conductive type;

    (b) forming a capacitor hole in said substrate such that said capacitor hole includes a generally vertical passage extending within the substrate and which passage terminates in a cavity formed with a curved surface portion extending in the substrate;

    (c) forming a semiconductor region of a second conductive type on said substrate and which semiconductor region extends coextensive with said passage and areas defining said cavity and such that a resulting generally vertical passage defined by the semiconductive region is dimensionally smaller in cross section than a corresponding cross section of the cavity formed within the substrate;

    whereby a capacitor region is formed within said capacitor hole between said substrate of the first conductive type and said semiconductor region of the second conductive type.

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