Bonding technique to join two or more silicon wafers
First Claim
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1. A method of bonding wafers comprising the steps of:
- (a) providing a first wafer having an exposed first surface;
(b) providing a second wafer having an exposed first surface;
(c) engaging said first and second wafers in a heat producing means, wherein said first surfaces of said first and second wafers are arranged contiguously; and
(d) bonding said first and second wafers by inducing a temperature gradient on said first surfaces of said first and second wafers, wherein said gradient originates at a predetermined point on said first surfaces of said wafers and radiates outwardly along a continuous front across the remaining area of said first surfaces of said first and second wafers.
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Abstract
A method of manufacturing semiconductors formed of bonded wafers. The method includes the use of a heat sink. The heat sink induces a temperature gradient to occur on a single area at the interface of the wafers with the gradient moving rapidly across the remaining surface. As a result of the temperature front, the voids or uncontacted areas between the wafers which result in a typical bonding process are substantially reduced, thereby providing a stronger and more effective bond.
242 Citations
15 Claims
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1. A method of bonding wafers comprising the steps of:
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(a) providing a first wafer having an exposed first surface; (b) providing a second wafer having an exposed first surface; (c) engaging said first and second wafers in a heat producing means, wherein said first surfaces of said first and second wafers are arranged contiguously; and (d) bonding said first and second wafers by inducing a temperature gradient on said first surfaces of said first and second wafers, wherein said gradient originates at a predetermined point on said first surfaces of said wafers and radiates outwardly along a continuous front across the remaining area of said first surfaces of said first and second wafers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of bonding wafers comprising the steps of:
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(a) arranging a first surface of a first wafer and a first surface of a second wafer into contact with each other; (b) selectively providing a heat sink means for inducing a heat sink on selective areas of said first and second wafers; and
,(c) placing said first and second wafers and said heat sink means in a heat producing means, wherein said heat sink means includes a heat sinking material which induces a thermal gradient to result on said surfaces of said wafers when said wafers are exposed to heat generated by said heat producing means. - View Dependent Claims (9, 10, 11, 12)
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13. A method of manufacturing a silicon on insulator semiconductor including the steps of:
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(a) providing a first layer of semiconductor material formed on a first surface of a support structure; (b) providing a first layer of insulative material on a first surface of a handle wafer, said first layer of said insulative material having an exposed surface; (c) arranging an exposed surface of said first layer of semiconductor material into contact with said exposed surface of said first layer of said insulative material; (d) selectively arranging a first heat sink plate on a second surface of said support structure and a second heat sink plate on a second surface of said handle wafer, wherein said first and second heat sink plates have the same circumference of said support structures and said handle wafers, and further having an aperture formed at the center of each plate for selectively exposing said second surfaces of the respective support structure and handle wafer; and
,(e) placing said first and second heat sink plates and said support structure and handle wafer in a means for producing heat and heating the same, wherein a temperature gradient is induced on said surfaces of said first and second layers, said surfaces becoming bonded as said temperature gradient originates centrally on the said surfaces and radially progresses toward the outer perimeter of said surfaces. - View Dependent Claims (14)
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15. A method of bonding semiconductor wafers comprising:
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(a) arranging a first wafer and a second wafer contiguously with each other; (b) preheating said wafers at a temperature of approximately 180°
C. for approximately less than three hours;(c) bonding said first and second wafers together by providing a circular heat sink ring on an exposed surface of the respective wafers and heating said wafers to between approximately 800°
C. and approximately 1200°
C.
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Specification