Bonding technique to join two or more silicon wafers

• US 4,854,986 A
• Filed: 05/13/1987
• Issued: 08/08/1989
• Est. Priority Date: 05/13/1987
• Status: Expired due to Term

• Current Assignee: Intersil Corporation (Renesas Electronics Corporation)
• Original Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Inventors: Raby, Joseph S.
• Primary Examiner(s): Weston, Caleb
• Application Number:
  US07/049,637
• Time in Patent Office: 818 Days
• Field of Search: 156/87, 156/89, 156/583.4, 156/583.9, 165/80.1, 165/80.2, 165/80.3, 165/146, 165/185, 174/16 HS, 357/81, 148/33, 437/247, 437/248, 437/250
• US Class Current: 156/87
• CPC Class Codes: H01L 21/187 by direct bonding

Abstract

A method of manufacturing semiconductors formed of bonded wafers. The method includes the use of a heat sink. The heat sink induces a temperature gradient to occur on a single area at the interface of the wafers with the gradient moving rapidly across the remaining surface. As a result of the temperature front, the voids or uncontacted areas between the wafers which result in a typical bonding process are substantially reduced, thereby providing a stronger and more effective bond.

Claims

1. A method of bonding wafers comprising the steps of:

(a) providing a first wafer having an exposed first surface;

(b) providing a second wafer having an exposed first surface;

(c) engaging said first and second wafers in a heat producing means, wherein said first surfaces of said first and second wafers are arranged contiguously; and

(d) bonding said first and second wafers by inducing a temperature gradient on said first surfaces of said first and second wafers, wherein said gradient originates at a predetermined point on said first surfaces of said wafers and radiates outwardly along a continuous front across the remaining area of said first surfaces of said first and second wafers.

2. The method of claim 1, further comprising the step of dissipating said thermal gradient on said wafer surfaces rapidly after said temperature gradient originates.

3. The method of claim 2, wherein the inducement of a temperature gradient includes the step of selectively arranging a heat sink means on a second surface of said first and second wafers for providing a heat sink on selective areas of said second surfaces for purposes of inducing a thermal gradient.

4. The method of claim 3, wherein said heat sink means includes a circular means having an aperture at its center, wherein said temperature gradient is induced to originate centrally on the surfaces of said wafers and to radiate radially to the outward circumference of said surfaces.

5. The method of claim 3, wherein said heat sink means includes a supporting means for supporting said wafers, said supporting means being arranged contiguous with a portion of a said second surface of said first wafer.

6. The method of claim 3, wherein said heat producing means includes a rapid thermal annealer (RTA), said method of bonding wafers further comprising heating said wafers at a temperature between approximately 800°

C. to 1200°

C. for approximately three to ten minutes.

7. The method of claim 6, further comprising the steps of preheating the combined wafers at a temperature of approximately 180°

C. for approximately two hours prior to heating said wafers between approximately 800°

C. and approximately 1200°

C.

8. A method of bonding wafers comprising the steps of:

(a) arranging a first surface of a first wafer and a first surface of a second wafer into contact with each other;

(b) selectively providing a heat sink means for inducing a heat sink on selective areas of said first and second wafers; and

,

(c) placing said first and second wafers and said heat sink means in a heat producing means, wherein said heat sink means includes a heat sinking material which induces a thermal gradient to result on said surfaces of said wafers when said wafers are exposed to heat generated by said heat producing means.

9. The method of claim 8, wherein said heat sink means is of a sufficiently low mass for allowing said thermal gradient to dissipate rapidly.

10. The method of claim 9, wherein said heat sink means includes a first and second circular plate having an aperture at the center of each plate, wherein said first plate is arranged on a second surface of said first wafer and said second plate is arranged on a second surface of said second wafer, wherein said temperature gradient originates at the center of said wafers and radially progresses along a continuous front.

11. The method of claim 9, wherein said heat sink means includes a supporting means which extends partially under a portion of said first wafer, said supporting means being arranged contiguous with a portion of said second surface of said first wafer.

12. The method of claim 9, wherein said heat producing means includes a rapid thermal annealer (RTA).

13. A method of manufacturing a silicon on insulator semiconductor including the steps of:

(a) providing a first layer of semiconductor material formed on a first surface of a support structure;

(b) providing a first layer of insulative material on a first surface of a handle wafer, said first layer of said insulative material having an exposed surface;

(c) arranging an exposed surface of said first layer of semiconductor material into contact with said exposed surface of said first layer of said insulative material;

(d) selectively arranging a first heat sink plate on a second surface of said support structure and a second heat sink plate on a second surface of said handle wafer, wherein said first and second heat sink plates have the same circumference of said support structures and said handle wafers, and further having an aperture formed at the center of each plate for selectively exposing said second surfaces of the respective support structure and handle wafer; and

,

(e) placing said first and second heat sink plates and said support structure and handle wafer in a means for producing heat and heating the same, wherein a temperature gradient is induced on said surfaces of said first and second layers, said surfaces becoming bonded as said temperature gradient originates centrally on the said surfaces and radially progresses toward the outer perimeter of said surfaces.

14. The method of claim 13, wherein said heat producing means includes a rapid thermal annealer (RTA), said bonding includes heating of said semiconductor material and insulative material between 800°

C. to 1200°

C. for about three to ten minutes.

15. A method of bonding semiconductor wafers comprising:

(a) arranging a first wafer and a second wafer contiguously with each other;

(b) preheating said wafers at a temperature of approximately 180°

C. for approximately less than three hours;

(c) bonding said first and second wafers together by providing a circular heat sink ring on an exposed surface of the respective wafers and heating said wafers to between approximately 800°

C. and approximately 1200°

C.