Opto-electronic vivaldi transceiver

• US 4,855,749 A
• Filed: 02/26/1988
• Issued: 08/08/1989
• Est. Priority Date: 02/26/1988
• Status: Expired due to Fees

• Current Assignee: United States Of America As Represented By The Secretary Of The Air Force
• Original Assignee: United States Of America As Represented By The Secretary Of The Air Force
• Inventors: DeFonzo, Alfred P.
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): Johnson, Doris J.
• Application Number:
  US07/160,736
• Time in Patent Office: 529 Days
• Field of Search: 343/700 MS, 343/746, 343/747, 343/767, 343/770, 343/863, 455/327, 455/328, 332/116, 332/ 107 SL
• US Class Current: 343/767
• CPC Class Codes: H01Q 13/085 Slot-line radiating ends
• CPC Class Codes: H01Q 9/005 for radiating non-sinusoidal waves

Abstract

A planar integrated opto-electronic transceiver apparatus having a pair of broadband tapered slot line antennas which are monolithically integrated on an ion implanted silicon on sapphire substrate. An optical pulse which is applied to the narrow slot of the transmitting antenna, generates an electromagnetic transient to the antenna aperture from which it is radiated to receiver slot line antenna. The received electromagnetic transient is detected at the narrow slot and is time resolved by an optical sampling signal.

Claims

1. A planar integrated opto-electronic transceiver apparatus comprising in combination:

a first silicon on sapphire substrate with a first tapered slot line antenna deposited on the surface of the silicon epilayer, said first slot line antenna having a narrow slot at one end and a large aperture at its other end, said first slot line antenna having a predetermined overall length, said first slot li-ne antenna receiving a DC bias, said first slot line antenna receiving an optical pulse signal at said narrow slot which causes an electromagnetic transient to propagate down said first slot line antenna towards its aperture, said electromagnetic transient is radiated from said aperture of said first slot line antenna, and,

a second silicon on sapphire substrate with a second tapered slot line antenna deposited on the surface of the silicon epilayer, said second slot line antenna having a narrow slot at one end and a large aperture at its other end, said second slot line antenna having a predetermined overall length, said second slot line antenna receiving a DC bias, said second slot line antenna receiving said electromagnetic transient at said aperture of said second slot antenna, said electromagnetic transient is propagated down said second slot line antenna towards said narrow slot, said electromagnetic transient is detected and time resolved at said narrow slot by a photoconductive signal which is applied to said narrow slot.

2. A planar integrated opto-electronic transceiver apparatus as described in claim 1 wherein said silicon epilayer of said first and second silicon on sapphire substrate is ion implanted with energetic ions.

3. A planar integrated opto-electronic transceiver as described in claim 1 wherein said first and second slot line antennas have a linear taper.

4. A planar integrated opto-electronic transceiver as described in claim 1 wherein said first and second slot line antennas have an exponential taper.

5. A planar integrated opto-electronic transceiver as described in claim 1 wherein said DC bias on said first and second slot line antennas is in the range of 10-40 volts.

6. A planar integrated opto-electronic transceiver as described in claim 1 wherein said predetermined length of said first and second slot line antennas equals 2.9 mm, said narrow slot of said first and second slot line antennas has a width equal to 30 μ

m and said large aperture of said first and second antennas has a width equal to 1.9 mm.

7. A planar integrated opto-electronic transceiver as described in claim 2 wherein said energetic ions reduce the lifetimes of the free carrier in said silicon epilayer.

8. A planar integrated opto-electronic transceiver as described in claim 2 wherein said energetic ions have energy levels of 100 keV and 200 keV.

9. A planar integrated opto-electronic transceiver as described in claim 2 wherein said energetic ions are applied at a dosage level of 10¹⁵ cm^-2.

10. A planar integrated opto-electronic transceiver as described in claim 2 wherein said energetic ions are oxygen ions.