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Selectively definable semiconductor device

  • US 4,855,803 A
  • Filed: 07/26/1988
  • Issued: 08/08/1989
  • Est. Priority Date: 09/02/1985
  • Status: Expired due to Term
First Claim
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1. A composite gate-array semiconductor device, comprising:

  • a plurality of logic dedicated general purpose cell regions, each capable of providing a desired logic function and also capable of providing an interconnection function selectively;

    a plurality of function dedicated cell regions, each capable of providing a desired function and also capable of providing an interconnection function selectively, each of said plurality of function dedicated cell regions being disposed between two corresponding ones of said plurality of logic dedicated general purpose cell regions;

    a pair of adjacent bit lines;

    wherein said plurality of function dedicated cell regions include a plurality of RAM/ROM cells which can be selectively defined either as RAM cells or as ROM cells by metallization and which are connected to said adjacent bit lines; and

    a one-bit decoder which is connected between said pair of adjacent bit lines when said plurality of RAM/ROM cells are defined as ROM cells.

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