Reflector for excimer laser and excimer laser apparatus using the reflector

• US 4,856,019 A
• Filed: 02/25/1988
• Issued: 08/08/1989
• Est. Priority Date: 02/26/1987
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Miyata, Takeo, Iwabuchi, Takashi
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): Vo, Xuan Thi
• Application Number:
  US07/160,460
• Time in Patent Office: 530 Days
• Field of Search: 372/99, 372/19, 372/96, 372/23, 372/34, 372/36, 372/57, 350/164, 350/600
• US Class Current: 372/99
• CPC Class Codes: G02B 5/0858 the reflecting layers comprising a single metallic layer with one or more dielectric layers
• CPC Class Codes: G02B 5/0891 Ultraviolet [UV] mirrors apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06

Abstract

A reflector for an excimer laser is composed of an aluminum layer deposited on a substrate and at least two pairs of dielectric multilayers of high refractive index material and low refractive index material alternately piled on the aluminum layer, and optical thickness of the respective layers of an outer pair of the dielectric multilayers are deviated from λ/4 and total optical thickness of the outer pair is made to be λ/2.

Claims

1. A reflector for an excimer laser comprising:

a substrate made of a material having a high thermal conductivity and a low coefficient of linear expansion,

an aluminium layer formed on one surface of said substrate, and

dielectric multilayers formed on said aluminium layer,

said dielectric multilayers being essentially composed of at least two pairs of a layer of high refractive index material and a layer of low refractive index material, and an optical thickness of each layer except for an outer pair of layers is λ

/4, and an optical thickness of each layer of said outer pair of layers is deviated from λ

/4, and total optical thickness of said outer pair of layers is λ

/2.

2. A reflector for an excimer laser in accordance with claim 1, wherein

said substrate is made of material which is at least 0.37×

10⁶ ×

W/cm in ratio of thermal conductivity to coefficient of linear expansion.

3. A reflector for an excimer laser in accordance with claim 1, wherein

said substrate is made of a material selected from the group consisting of silicon, silicon carbide, tungsten, molybdenum, an alloy of tungsten and molybdenum, thermal resistance ceramics, tungsten covered with silicon carbide, molybdenum covered with silicon carbide, an alloy of tungsten and molybdenum covered with silicon carbide and thermal resistance ceramics covered with silicon carbide.

4. A reflector for an excimer laser in accordance with claim 1, wherein

said dielectric multilayers are made of alternative lamination of two kinds of layers selected from the group consisting of yttrium oxide, hafnium oxide, scandium oxide, magnesium oxide, aluminium oxide, silicon oxide, yttrium flouride, lithium flouride, magnesium flouride, lanthanum flouride, calcium flouride and thorium flouride.

5. A reflector for an excimer laser in accordance with claim 1, wherein

an optical thickness of the layer of low refractive index material is thicker than the optical thickness of the layer of high refractive index material in the outer pair.

6. A reflector for an excimer laser in accordance with claim 1, further comprising:

a protecting plate formed on a surface of the dielectric multilayers.

7. A reflector for an excimer laser in accordance with claim 6, wherein

said protecting plate is made of a single crystal plate of material selected from the group consisting of calcium flouride and magnesium flouride.

8. An excimer laser apparatus comprising:

a pair of longitudinally extending bar-shaped main discharge electrodes enclosed in a chamber in a spaced parallel relationship relative one another and defining a gap therebetween having a longitudinally directed laser axis therein,

a plurality of pre-discharge electrodes in said chamber extending along and adjacent to the gap defined between said pair of main discharge electrodes,

a laser gas including an excimer laser active medium enclosed in said chamber,

a total reflector positioned in proximity to one end of said pair of main discharge electrodes for reflecting energy along the laser axis, said total reflector being composed of an aluminium layer and dielectirc multilayers formed on a substrate made of a material having a high thermal conductivity and a low coefficient of linear expansion, and

an output coupling reflector positioned in proximity to the other end of said pair of main discharge electrodes and facing said first-mentioned end for reflecting energy along the laser axis,

wherein said dielectric multilayers are composed of at least two pairs of a layer of high refractive index material and a layer of low refractive index material, the optical thickness of each layer other than the outer pair of layers being λ

/4, the optical thickness of each layer of the outer pair of layers being deviated from λ

/4, and the total optical thickness of the layers of the outer pair of layers being λ

/2.

9. An excimer laser apparatus in accordance with claim 8, wherein

said optical thickness of said layer of low refractive index material of said outer pair of layers is thicker than that of said layer of high refractive index material of said outer pair of layers.

10. An excimer laser apparatus comprising:

a pair of longitudinally extending bar-shaped main discharge electrodes enclosed in a chamber in a spaced parallel relationship relative one another and defining a gap therebetween having a longitudinally directed laser axis therein,

a plurality of pre-discharge electrodes in said chamber extending along and adjacent to the gap defined between said pair of main discharge electrodes,

a laser gas including an excimer laser active medium enclosed in said chamber,

a total reflector positioned in proximity to one end of said pair of main discharge electrodes for reflecting energy along the laser axis, said total reflector being composed of of an aluminum layer, dielectric multilayers and a single crystal plate made of a material selected from the group consisting of calcium flouride and magnesium flouride on a substrate made of a material having a high thermal conductivity and a low coefficient of linear expansion, and

an output coupling reflector positioned in proximity to the other end of said pair of main discharge electrodes and facing said first-mentioned end for reflecting energy along the laser axis,

wherein said dielectric multilayers are composed of at least two pairs of a layer of high refractive index material and a layer of low refractive index material, the optical thickness of each layer other than the outer pair of layers being λ

/4, the optical thickness of each layer of the outer pair of layers being deviated from λ

/4, and the total optical thickness of the layers of the outer pair of layers being λ

/2.

11. An excimer laser apparatus in accordance with claim 10, wherein

said optical thickness of said layer of low refractive index material of said outer pair of layers is thicker than that of said layer of high refractive index material of said outer pair of layers.

12. A reflector for an excimer laser comprising:

a substrate having a precisely polished surface,

an aluminium layer formed on said surface of said substrate,

dielectric multilayers formed on said aluminium layer, and

a protecting plate made of a single crystal plate of material selected from the group consisting of calcium flouride and magnesium flouride, and formed on said dielectric multilayers,

wherein said dielectric multilayers are composed of at least two pairs of a layer of high refractive index material and a layer of low refractive index material, an optical thickness of each layer other than the outer pair of layers is λ

/4, and an optical thickness of each layer of the outer pair of layers is deviated from λ

/4 and the total optical thickness of the layers of the outer pair of layers is λ

/2.