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Rapid thermal furnace for semiconductor processing

  • US 4,857,689 A
  • Filed: 03/23/1988
  • Issued: 08/15/1989
  • Est. Priority Date: 03/23/1988
  • Status: Expired due to Term
First Claim
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1. A semiconductor wafer processing furnace comprising:

  • (a) an elongated processing chamber enclosing a first zone and a second zone extending along a first reference axis;

    (b) a wafer support assembly including a support member and an associated translation means for selectively translating said support member between said zones along said first reference axis in response to an applied position signal;

    (c) first temperature means, including heating means for generating heat, for controlling said first zone to be substantially at a first temperature;

    (d) second temperature means for controlling said second zone to be substantially at a second temperature; and

    (e) a controller including means responsive to an applied control signal for generating said position signal and for applying said position signal to said translation means, said control signal being representative of a desired temperature of a region proximal to said support member,so that, in response to said position signal, said translation means translates said support member to position said support member along said reference axis such that the temperature of said region substantially matches said desired temperature.

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