Rapid thermal furnace for semiconductor processing

• US 4,857,689 A
• Filed: 03/23/1988
• Issued: 08/15/1989
• Est. Priority Date: 03/23/1988
• Status: Expired due to Term

• Current Assignee: Axcelis Technologies Incorporated
• Original Assignee: High Temperature Engineering Corp (Eaton Corporation PLC.)
• Inventors: Lee, Chunghsin
• Primary Examiner(s): Leung, Philip H.
• Application Number:
  US07/173,137
• Time in Patent Office: 510 Days
• Field of Search: 219/10.71, 219/10.69, 219/10.491, 219/10.77, 219/494, 219/518, 219/476, 219/480, 432/45, 432/77-79, 432/85, 432/128, 432/129, 432/132, 432/163, 266/87, 266/92, 266/93, 373/1, 373/4, 373/6, 373/7, 373/144, 373/145, 340/686
• US Class Current: 219/650
• CPC Class Codes: C30B 31/10 Reaction chambers; Selection of materials therefor
• CPC Class Codes: C30B 31/12 Heating of the reaction chamber
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers
• CPC Class Codes: Y10S 414/135 Associated with semiconductor wafer handling

Abstract

A semiconductor wafer processing furnace includes an elongated processing chamber enclosing a first zone and a second zone extending along a first reference axis, and a wafer support assembly having a support member and associated translation elements for selectively translating the support member between the zones, along the first reference axis, in response to an applied position signal. Temperature elements control the first and second zones to have selected first and second temperatures, respectively. A controller applies the position signal to the translation elements, in response to an applied control signal representative of a desired temperature of the region surrounding the support member. Responsive to the position signal, the translation elements position the support member along the reference axis such that the temperature of the region surrounding the support member substantially matches the desired temperature.

Claims

1. A semiconductor wafer processing furnace comprising:

(a) an elongated processing chamber enclosing a first zone and a second zone extending along a first reference axis;

(b) a wafer support assembly including a support member and an associated translation means for selectively translating said support member between said zones along said first reference axis in response to an applied position signal;

(c) first temperature means, including heating means for generating heat, for controlling said first zone to be substantially at a first temperature;

(d) second temperature means for controlling said second zone to be substantially at a second temperature; and

(e) a controller including means responsive to an applied control signal for generating said position signal and for applying said position signal to said translation means, said control signal being representative of a desired temperature of a region proximal to said support member,

so that, in response to said position signal, said translation means translates said support member to position said support member along said reference axis such that the temperature of said region substantially matches said desired temperature.

2. A furnace according to claim 1 further comprising means for controlling the temperature gradient along said first reference axis to be monotonic between said first and second zones.

3. A furnace according to claim 1 further comprising sensor means for generating a temperature signal representative of the temperature of the region proximal to said support member, and

wherein said controller further includes means responsive to said temperature signal and said applied control signal for generating said position signal, said position signal being representative of the difference between the temperature of said region and said desired temperature.

4. A furnace according to claim 1 further comprising sensor means for generating a temperature signal representative of the temperature of a semiconductor wafer, and

wherein said controller further includes means responsive to said temperature signal and said applied control signal for generating said position signal, said position signal being representative of the difference between the temperature of the wafer and a desired temperature of the wafer.

5. A furnace according to claim 1 wherein said first reference axis is substantially vertical.

6. A furnace according to claim 1 wherein said first reference axis is substantially horizontal.

7. A furnace according to claim 1 further comprising means for generating said control signal.

8. A furnace according to claim 1 wherein said generating means includes means for generating said control signal to be representative of any of an up-ramp state, a constant state, or a down-ramp state.

9. A furnace according to claim 1 further comprising means for automatically loading at least one semiconductor wafer-to-be-processed onto said support member.

10. A furnace according to claim 1 further comprising means for automatically unloading at least one semiconductor wafer-to-be-processed from said support member.

11. A furnace according to claim 1 further comprising means for supporting a semiconductor wafer-to-be-processed in said region proximal to said support member.

12. A semiconductor wafer processing furnace comprising:

(a) an elongated processing chamber enclosing a first zone and a second zone extending along a first reference axis;

(b) a wafer support assembly including a support member and an associated translation means for selectively translating said support member between said zones along said first reference axis in response to an applied position signal;

(c) first temperature means, including heating means for generating heat, for controlling said first zone to be substantially at a first temperature;

(d) sensor means for generating a temperature signal representative of the temperature of the region proximal to said support member; and

(e) a controller including means responsive to said temperature signal and an applied control signal for generating said position signal and for applying said position signal to said translation means, said control signal being representative of a desired temperature of said region, and said position signal being representative of the difference between the temperature of said region and said desired temperature,

so that, in response to said position signal, said translation means translates said support member to position said support member along said reference axis such that the temperature of said region substantially matches said desired temperature.

13. A furnace according to claim 12 wherein said sensor means includes means for generating a temperature signal representative of the temperature of a semiconductor wafer.

14. A furnace according to claim 12 wherein said first reference axis is substantially vertical.

15. A furnace according to claim 12 wherein said first reference axis is substantially horizontal.

16. A furnace according to claim 12 further comprising means for controlling the temperature of said second zone to be substantially at a second temperature.

17. A furnace according to claim 12 further comprising means for controlling the temperature gradient along said first reference axis to be monotonic between said first and second zones.

18. A furnace according to claim 12 further comprising means for generating said control signal.

19. A furnace according to claim 12 wherein said generating means includes means for generating said control signal to be representative of a desired up-ramp state followed by a constant followed by a down-ramp state.

20. A furnace according to claim 12 further comprising means for automatically loading at least one semiconductor wafer-to-be-processed on to said support member.

21. A furnace according to claim 20 further comprising means for automatically unloading at least one semiconductor wafer-to-be-processed from said support member.

22. A furnace according to claim 12 further comprising means for supporting a semiconductor wafer-to-be-processed in said region proximal to said support member.

23. A furnace according to claim 22 wherein said supporting means includes means for controlling the magnitude of thermal radiation of said supported wafer-to-be-processed to be substantially uniform across said supported wafer-to-be-processed.

24. A furnace according to claim 23 wherein said means for controlling said magnitude includes a thermal reflector positioned about the periphery of said supported wafer-to-be-processed.

25. A furnace according to claim 22 wherein said wafer supporting means includes said support member and means for positioning said wafer-to-be-processed with a predetermined side of said wafer-to-be-processed in said proximal region and opposite to and displaced from said support member.

26. A furnace according to claim 25 further comprising a plurality of ports disposed in the surface of said support member and opposite to the location of said predetermined side of a wafer-to-be-processed which is supported by said wafer positioning means, and means for coupling said ports to a gas supply.

27. A furnace according to claim 12 wherein said chamber is constructed from the groups consisting of alumina, silicon carbide, quartz and ceramic material.

28. A furnace according to claim 12 further comprising cooling means within said chamber, said cooling means including means for selectively directing a flow of cooling gas across at least one surface of a wafer-to-be-processed affixed to said surface member.