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Silicon waveguide with monolithically integrated Schottky barrier photodetector

  • US 4,857,973 A
  • Filed: 05/14/1987
  • Issued: 08/15/1989
  • Est. Priority Date: 05/14/1987
  • Status: Expired due to Fees
First Claim
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1. A photodetector comprising:

  • a crystalline substrate;

    a first Schottky barrier contact positioned upon said crystalline substrate;

    a crystalline silicon layer deposited on said crystalline substrate and said first Schottky barrier contact wherein said crystalline silicon layer is formed into a waveguide for the transmission of optic signals;

    a second Schottky barrier contact position on top of said waveguide, said first and second Schottky barrier contacts for detecting light transmission through said waveguides; and

    an Ohmic contact electrically connected to said crystalline silicon layer.

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