Silicon waveguide with monolithically integrated Schottky barrier photodetector
First Claim
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1. A photodetector comprising:
- a crystalline substrate;
a first Schottky barrier contact positioned upon said crystalline substrate;
a crystalline silicon layer deposited on said crystalline substrate and said first Schottky barrier contact wherein said crystalline silicon layer is formed into a waveguide for the transmission of optic signals;
a second Schottky barrier contact position on top of said waveguide, said first and second Schottky barrier contacts for detecting light transmission through said waveguides; and
an Ohmic contact electrically connected to said crystalline silicon layer.
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Abstract
The invention comprises a Schottky barrier type infrared photodetector which is monolithically integrated on a silicon waveguide. A Schottky barrier contact is positioned directly on a silicon waveguide to absorb grazing incidence optical signals passing through the waveguide. The Schottky contact is operated in the avalanche or reverse bias mode to generate a useable electrical signal.
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3 Claims
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1. A photodetector comprising:
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a crystalline substrate; a first Schottky barrier contact positioned upon said crystalline substrate; a crystalline silicon layer deposited on said crystalline substrate and said first Schottky barrier contact wherein said crystalline silicon layer is formed into a waveguide for the transmission of optic signals; a second Schottky barrier contact position on top of said waveguide, said first and second Schottky barrier contacts for detecting light transmission through said waveguides; and an Ohmic contact electrically connected to said crystalline silicon layer. - View Dependent Claims (2, 3)
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Specification