Fine grained embrittlement resistant tantalum wire
First Claim
Patent Images
1. In a wrought tantalum-based product, the improvement which comprises inclusion of about 10 to about 1000 ppm silicon in combination with about 10 to about 1000 ppm total of one or more metals in oxide form having high free energies of formation as compared with tantalum and which possess an oxide melting temperature in excess of 2400°
- C.
1 Assignment
0 Petitions
Accused Products
Abstract
Tantalum and tantalum-based alloys, particularly in wire form, are significantly improved in retention of a fine grain size at elevated temperatures and in resistance to embrittlement by the addition of 10 to 1000 ppm silicon and 10 to 1000 ppm thorium-containing material.
-
Citations
18 Claims
- 1. In a wrought tantalum-based product, the improvement which comprises inclusion of about 10 to about 1000 ppm silicon in combination with about 10 to about 1000 ppm total of one or more metals in oxide form having high free energies of formation as compared with tantalum and which possess an oxide melting temperature in excess of 2400°
-
7. A tantalum wire composed of substantially pure unalloyed tantalum containing about 10 to 1000 ppm silicon in combination with about 10 to 1000 ppm total of one or more metal oxides having melting points of at least 2400°
- C. and more negative standard free energies of formation than tantalum oxide up to at least 2400°
C. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
- C. and more negative standard free energies of formation than tantalum oxide up to at least 2400°
-
15. A metal-based product composed of a base metal selected from the group consisting of tantalum, niobium (columbium), vanadium and alloys of these metals, 10 to 1000 ppm silicon, and 10 to 1000 ppm total of one or more metal oxides having melting points of at least 2400°
- C. and more negative standard free energies of formation than does the oxide of said base metal up to at least 2400°
C. - View Dependent Claims (16, 17, 18)
- C. and more negative standard free energies of formation than does the oxide of said base metal up to at least 2400°
Specification