Method for measuring plasma properties in semiconductor processing
First Claim
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1. A method for determining the concentration profile of the active gas species in a plasma reactor so as to allow the adjustment thereof, comprising the steps of:
- measuring the intensity of the emission of light from the plasma; and
adjusting the concentration gradient of the active species dependent upon the measured intensity of the light emission of the plasma.
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Abstract
An apparatus and method for measuring the concentration profile of an active species across the surface of a semiconductor slice in a plasma reactor is disclosed that permits uniformity of etch and deposition across the surface of the semiconductor slice.
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Citations
32 Claims
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1. A method for determining the concentration profile of the active gas species in a plasma reactor so as to allow the adjustment thereof, comprising the steps of:
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measuring the intensity of the emission of light from the plasma; and adjusting the concentration gradient of the active species dependent upon the measured intensity of the light emission of the plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for determining and controlling the concentration profile of the active gas species in a plasma reactor comprising the steps of:
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introducing an actinometry gas into the plasma in the reactor; measuring the intensity of light emitted by the gas species as compared with the intensity of light emitted by the actinometry gas; and adjusting the concentration gradient of the active species gas dependent upon the comparison of the species gas and the actinometry gas. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A method for uniformly etching or deposition across the surface of a semiconductor slice in a plasma reactor utilizing one of more specie gases comprising the steps of;
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measuring the uniformity of the concentration profile of the active species gas across the surface of the semiconductor gas; and adjusting the concentration of the active species gas dependent upon the measurement profile. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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- 29. An apparatus for determining the concentration profile of an active species across the surface of a semiconductor slice in a plasma reactor, comprising an optical system for observing the plasma emission within the plasma reactor, a monochrometer for measuring the intensity of at least one specific emission line from the plasma profiled across the surface of the semiconductor slice, and means for adjusting the concentration profile across the surface of the semiconductor slice to provide uniform etch/deposition on the surface of the semiconductor slice.
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32. A method for determining the three dimensional concentration profile of the active gas species in a plasma reactor so as to allow the adjustment thereof, comprising the steps of:
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measuring the intensity of the emission of light from the plasma; and adjusting the concentration gradient of tee active species dependent upon the measured intensity of the light emission of the plasma.
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Specification