Plasma processing apparatus for large area ion irradiation

• US 4,859,908 A
• Filed: 09/23/1987
• Issued: 08/22/1989
• Est. Priority Date: 09/24/1986
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Yoshida, Akihisa, Hirao, Takashi, Setsune, Kentaro
• Primary Examiner(s): Groody, James J.
• Assistant Examiner(s): Powell, Mark R.
• Application Number:
  US07/100,148
• Time in Patent Office: 699 Days
• Field of Search: 313/230, 313/231.3, 313/359.1, 313/360.1, 313/156, 313/161, 315/111.2, 315/111.4, 315/111.6, 315/111.7, 315/111.8, 315/111.9, 204/298 EE, 204/298 MN, 204/298 BD
• US Class Current: 315/111.81
• CPC Class Codes: C30B 31/22 by ion-implantation
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3266 Magnetic control means

Abstract

A plasma processing apparatus performs various plasma processings of a substrate having a large area in a semiconductor element manufacturing process, by using highly excited plasma generated at a low pressure under the application of RF power and a magnetic field. In this plasma processing apparatus, a gas is introduced into a vacuum chamber to be used as an ion source, RF power is applied to two electrodes having respective surfaces opposite to each other through the gas to thereby generate the plasma in the vacuum chamber, and a magnetic field is applied to the plasma from a magnetic field source arranged at a predetermined position. The intensity of the applied magnetic field is set to be 1.5 times or more the magnetic field intensity which causes electron cyclotron resonance to occur at the frequency f of the applied RF power. Particularly, when the frequency f of the RF power is 13.56 MHz, the magnetic field intensity is selected to be in the range from 25 gausses to 35 gausses.

Claims

1. An ion irradiation processing apparatus comprising:

a discharge chamber including

a first vacuum chamber having an outer surface formed of an insulating material,

RF electrodes disposed outside said first vacuum chamber and along said outer surface thereof, said RF electrodes being supplied with RF power, and

a magnetic field source disposed at a predetermined position outside said first vacuum chamber, said RF electrodes and said magnetic field source comprising means for generating a ion plasma within said first vacuum chamber

a substrate chamber including

a second vacuum chamber in communication with said discharge chamber, and

a substrate stand mounted within said second vacuum chamber; and

biasing means for causing ions from said plasma to uniformly irradiate said substrate stand in said substrate chamber, said biasing means including

a first electrode, having an aperture, interposed between said substrate chamber and said discharge chamber, said first electrode being electrically insulated from said substrate chamber and said discharge chamber, and

a second electrode disposed in said discharge chamber opposite to and spaced apart from said first electrode, said first and said second electrodes being connected across a voltage source.

2. An apparatus according to claim 1, further comprising a conductive mesh partially covering said aperture of said first electrode.

3. An apparatus according to claim 1, further comprising a conductive porous plate partially covering said aperture of said first electrode.

4. An apparatus according to claim 1, wherein said discharge chamber further comprises a grounded shield separating said RF electrodes from said magnetic field source.

5. An apparatus according to claim 4, further comprising an insulating member interposed between said RF electrodes and said grounded shield.

6. An apparatus according to claim 5, further comprising a hermetic enclosure disposed outside said electromagnetic coil enclosing said first vacuum chamber.

7. An apparatus according to claim 6, further comprising an insulating member interposed between said RF electrodes and said grounded shield.

8. An apparatus according to claim 1, wherein said first vacuum chamber is comprised of a cylindrical tube made of an insulating material.

9. An apparatus according in claim 1, wherein said first vacuum chamber includes first and second elongated opposing parallel surfaces.

14. An apparatus according to claim 1, wherein said magnetic field source provides a magnetic field in said discharge chamber of 500 gauss or less.

16. An apparatus according to claim 1, wherein said magnetic field source provides a magnetic field in said discharge chamber in the range of 25 to 35 gauss.

18. An apparatus according to claim 1, wherein said discharge chamber and said substrate chamber are maintained at a pressure of 0.1 Torr or less.

10. An ion irradiation processing apparatus comprising:

a discharge chamber including a first vacuum chamber containing therein a first electrode, a first conductive porous plate, and a second conductive porous plate, said electrode and said plates being connected to a voltage source, with said first electrode, said first conductive porous plate, and said second conductive porous plate being arranged parallel with one another;

a substrate chamber comprised of a second vacuum chamber communicating with said discharge chamber, said second vacuum chamber containing therein a substrate stand arranged in parallel with said second conductive porous plate;

an RF power source connected to said first electrode and said first porous plate for applying RF power across said first electrode and said first conductive porous plate; and

a magnetic field source disposed outside said discharge chamber.

11. An apparatus according to claim 10, wherein said first conductive porous plate is formed by a conductive mesh.

12. An apparatus according to claim 10, wherein said second conductive porous plate is formed by a conductive mesh.

13. An apparatus according to claim 11, wherein said second conductive porous plate is formed by a conductive mesh.

15. An apparatus according to claim 10, wherein said magnetic field source provides a magnetic field in said discharge chamber of 500 gauss or less.

17. An apparatus according to claim 10, wherein said magnetic field source provides a magnetic field in said discharge chamber in the range of 25 to 35 gauss.

19. An apparatus according to claim 10, wherein pressure in said discharge chamber and said substrate chamber are maintained at a pressure of is 0.1 Torr or less.