Apparatus and method for production process diagnosis using dynamic time warping
First Claim
1. A process monitoring apparatus comprising:
- a former for forming a variable signal reference curve corresponding to a predetermined process;
an acquirer for acquiring actual data forming a variable signal actual curve corresponding to an actual operation of said predetermined process;
a processor for dividing the reference data into reference regions at critical points based on characteristics of the reference data;
a matcher for matching the critical points on the reference curve with corresponding critical points on the actual curve using a dynamic time warping function;
a divider for dividing the actual curve into actual regions at said critical points of the actual curve;
a comparer for comparing characteristics of at least one actualr egion with characteristics of a reference region with which the actual region has been matched; and
a generator that generates a signal indicative of the variance of a characteristic of the actual region beyond a predefined limit from a corresponding characteristic of the reference region that has been matched with the actual region.
0 Assignments
0 Petitions
Accused Products
Abstract
Operations of a plasma etch reactor (10) are monitored to detect aberrations in etching operations. A reference end point trace is defined (62) for the etch process. Regions are defined in the reference end point trace (70) with aid of a dynamic time warping matching function (84) and characteristics and tolerances for each region are defined (72-80). The etcher is run and an actual end point trace is obtained (82) from the running of the etcher. A warping function is constructed (88) between the actual trace and the reference trace. In building the warping function, candidate path segments (100) are constructed according to a minimum cumulative cost function (96). Once the regions of the reference trace and the actual trace has been matched according to an optimum dynamic time warping function path (106), characteristics of the matched regions are compared (66) to determine whether aberrations have occurred during the etch process. In an alternative embodiment, the actual trace (164) is matched to each of a library of reference traces (162,182) by dynamic time warping (166). By determining the best match, a determination can be made whether the actual trace is abnormal (174) or normal (176), and the type of abnormality.
-
Citations
65 Claims
-
1. A process monitoring apparatus comprising:
-
a former for forming a variable signal reference curve corresponding to a predetermined process; an acquirer for acquiring actual data forming a variable signal actual curve corresponding to an actual operation of said predetermined process; a processor for dividing the reference data into reference regions at critical points based on characteristics of the reference data; a matcher for matching the critical points on the reference curve with corresponding critical points on the actual curve using a dynamic time warping function; a divider for dividing the actual curve into actual regions at said critical points of the actual curve; a comparer for comparing characteristics of at least one actualr egion with characteristics of a reference region with which the actual region has been matched; and a generator that generates a signal indicative of the variance of a characteristic of the actual region beyond a predefined limit from a corresponding characteristic of the reference region that has been matched with the actual region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 55, 56)
-
-
9. Apparatus for monitoring operations in process equipment which carries out a predetermined process, comprising:
-
a storer for storing a plurality of reference signal curves, each corresponding to the progress of a process conducted in said process equipment, said reference signal curves including at least one predefined normal reference signal curve corresponding to an acceptable operaiton of the process and a plurality of predefined abnormal reference signal curves, each corresponding to an unacceptable operation of the process; a detector for generating an actual signal curve based on an actual operation of the process; a warping function calculator for deriving a dynamic time warping function for each of said reference curves, each warping function resulting from a matching of the actual curve to a reference curve; a cost calculator for calculating a cost related to the dissimilarity between the respective reference curve and said actual curve; and a matcher for matching said actual curve with a selected reference curve, said reference curve associated with a minimum cost of the calculated costs. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A method for monitoring end point traces of a plasma etch reactor comprising:
-
establishing a reference end point trace for a predetermined etch process; dividing the reference end point trace at critical points thereof into predetermined regions; conducting the predetermined etch process on a semiconductor device; obtaining an actual end point trace for the etch of the semiconductor device; matching the critical points on the reference trace with corresponding critical points on the actual trace using a dynamic time warping function; dividing the actual trace at the critical points thereof to define regions of the actual trace; and comparing characteristics of regions of the actual end point trace with corresponding characteristics of matched regions of the reference end point trace. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 63)
-
-
31. A method for monitoring operations in process equipment which carries out a predetermined process, comprising:
-
monitoring a process by a detector that provides a variable actual signal curve corresponding to the progress of the process; defining a variable reference signal curve corresponding to a predefined acceptable operation of the predetermined process; dividing the reference curve into regions on the basis of shared characteristics of the points on the curve within the region, said step of dividing performed at a plurality of critical points on the reference curve; matching the critical points on the reference curve with corresponding critical points on the actual curve using a dynamic time warping function; dividing the actual curve into regions at the critical points thereof; and comparing characteristics of at least one of the regions of the actual curve with the characteristics of a matched region in the reference curve. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 64)
-
-
42. A method for monitoring operations in process equipment which carries out a predetermined process, comprising the steps of:
-
storing a plurality of reference signal curves each corresponding to the progress of a process, the reference signal curves including at least one predefined normal reference signal curve corresponding to an acceptable operation of the process and a plurality of predefined abnormal reference signal curves, each corresponding to an unacceptable operation of the process; generating an actual signal curve by a detector, the actual curve corresponding to an actual operation of the process; deriving a dynamic time warping function for each of the reference curves, each warping function resulting from a matching of the actual curve to a reference curve; for each derived warping function, determining a cost related to the dissimilarity between the respective reference curve and the actual curve; finding a minimum cost function of the determined cost functions; and declaring a match between the actual curve and the reference curve associated with the minimum cost function. - View Dependent Claims (43, 44, 45, 46, 47, 48, 65)
-
-
49. An apparatus for monitoring a plasma etch process on a semiconductor device in a plasma etch reactor, said apparatus comprising:
-
a former for forming at least one variable signal reference curve from reference data corresponding to said plasma etch process; an acquirer for acquiring actual data forming a variable signal actual curve corresponding to an actual operation of said plasma etch process; and a warping function calculator for deriving a dynamic time warping function resulting from comparing said actual curve to said at least one reference curve. - View Dependent Claims (50, 51, 52, 53, 54)
-
-
57. A method of monitoring a plasma etch process on a semiconductor device in a plasma etch reactor, said method comprising:
-
defining at least one variable signal reference curve from reference data corresponding to said plasma etch process; obtaining actual data forming a variable signal actual curve corresponding to an actual etching of said semiconductor device by said plasma etch process; and deriving a dynamic time warping function resulting from comparing said actual curve to said at least one reference curve. - View Dependent Claims (58, 59, 60, 61, 62)
-
Specification