Pattern forming process and thin-film magnetic head formed by said process

• US 4,863,557 A
• Filed: 05/25/1988
• Issued: 09/05/1989
• Est. Priority Date: 05/29/1987
• Status: Expired due to Fees

• Current Assignee: Makoto Kitou, Yuuichi Kokaku
• Original Assignee: Makoto Kitou, Yuuichi Kokaku
• Inventors: Kitou, Makoto, Kokaku, Yuuichi
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/198,197
• Time in Patent Office: 468 Days
• Field of Search: 156/643, 156/646, 156/652, 156/653, 156/655, 156/656, 156/657, 156/659.1, 156/661.1, 156/662, 156/667, 156/904, 427/130, 427/131, 427/132, 427/43.1, 427/38, 427/39, 360/110, 360/119, 360/120, 360/121, 360/122, 29/603, 204/192.32, 204/192.35, 204/192.37, 428/694
• US Class Current: 216/22
• CPC Class Codes: G03F 7/0755 Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds G03F7/0752 takes precedence
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/167 from the gas phase, by plasma deposition G03F7/2035 takes precedence
• CPC Class Codes: G03F 7/36 Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
• CPC Class Codes: G11B 5/3163 Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
• CPC Class Codes: Y10T 428/1157 Substrate composition

Abstract

Disclosed herein are a pattern forming process, particularly the one by lithography for fine fabrication, and a thin-film magnetic head formed by said process. The present invention provides a process for accurately fabricating a substrate having a stepped surface by dry etching, using as the mask a resist film formed by plasma polymerization. Plasma polymerization forms a uniform photosensitive resist film on a stepped surface, and the resist film can be used as the mask for the ion milling of the substrate.

Claims

1. A pattern forming process which comprises forming a resist film on a substrate having a stepped surface by plasma polymerization, patterning said resist film, and removing that part of the substrate which is not covered with said resist film, thereby forming a pattern on said substrate.

2. A pattern forming process as claimed in claim 1, wherein the removing of the substrate is performed by dry etching.

3. A pattern forming process as claimed in claim 2, wherein the plasma polymerization is performed by using as the raw material gas a monomer capable of forming a photosensitive polymer compound.

4. A pattern forming process as claimed in claim 2, wherein the plasma polymerization is performed by using as the raw material gas a mixture of a monomer capable of forming a photosensitive polymer compound and an inert gas or a vapor of an organic compound.

5. A pattern forming process as claimed in claim 1, wherein the stepped surface has a difference in level in the range of 5 μ

m to 30 μ

m.

16. A pattern forming process as claimed in claim 1, wherein the plasma polymerization is performed by using as the raw material gas a monomer capable of forming a photosensitive polymer compound.

18. A pattern forming process as claimed in claim 1, wherein the plasma polymerization is performed by using as the raw material gas a mixture of a monomer capable of forming a photosensitive polymer compound and an inert gas or vapor of an organic compound.

6. A pattern forming process which comprises forming a first resist film on a substrate having a stepped surface, forming a second resist film on said first resist film by plasma polymerization, patterning said second resist film, patterning said first resist film using said patterned second resist film as a mask, and removing that part of the substrate which is not covered with said first and second resist films.

7. A pattern forming process as claimed in claim 6, wherein the first resist film is one which can be removed by oxygen plasma.

8. A pattern forming process as claimed in claim 6, wherein the second resist film is one which is photosensitive and resistant to oxygen plasma.

9. A pattern forming process as claimed in claim 6, wherein the second resist film is one which contains silicon and can form a resist pattern upon exposure to electromagnetic wave or corpuscular rays, followed by development.

10. A pattern forming process as claimed in claim 6, wherein the first resist film is formed by plasma polymerization.

11. A pattern forming process as claimed in claim 10, wherein the first resist film is one which contains carbon atoms.

12. A pattern forming process as claimed in claim 6, wherein the first resist film is one which is formed by plasma-assisted chemical vapor deposition method, chemical vapor deposition method, sputtering method, or ion beam deposition method.

13. A pattern forming process as claimed in claim 12, wherein the first resist film is one which is made of carbon.

14. A pattern forming process as claimed in claim 6, wherein the first resist film is used as an insulation layer or protective film.

19. A pattern forming process as claimed in claim 12, wherein the first resist film is one which contains carbon atoms.

15. An improved process for producing a thin-film magnetic head including the steps of forming a first magnetic layer, a gap layer of non-magnetic material, a coil, and a second magnetic layer on a non-magnetic substrate by thin-film technology, wherein said improvement comprises forming a resist film on said second magnetic layer by plasma polymerization, patterning said resist film, and removing the part of the second magnetic film which is not covered with the resist film, thereby fabricating the second magnetic layer which determines the track width for recording and reading.

17. An improved process for producing a thin-film magnetic head including the steps of forming a first magnetic layer, a gap layer of non-magnetic material, a coil, and a second magnetic layer on a non-magnetic substrate by thin-film technology, wherein said improvement comprises forming a first resist film on said second magnetic layer, forming a second resist film on said first resist film by plasma polymerization, patterning said second resist film, patterning said first resist film using said second resist film as a mask, and removing the part which is not covered with said first and second resist films, thereby fabricating the second magnetic layer which determines the track width for recording and reading.

20. A thin-film magnetic head comprising a first magnetic layer on a non-magnetic substrate, a gap layer of non-magnetic material, a coil, a second magnetic layer, and a protective layer on said second magnetic layer wherein said protective layer is used as a resist film, being formed by plasma polymerization, being patterned, and a part of the second magnetic layer which is not covered with said resist film, is removed thereby fabricating the second magnetic layer which determines the track width for recording and reading.

21. A thin-film magnetic head comprising a first magnetic layer on a non-magnetic substrate, a gap layer of non-magnetic material, a coil, a second magnetic layer, and a protective layer on said second magnetic layer, wherein said protective layer is used as a first resist film, being patterned by using a second resist film formed on said first resist film by plasma polymerization as a mask, and said a part of the second magnetic layer which is not covered with said first and second resist film is removed, thereby fabricating the second magnetic layer which determines the track width for recording and reading.

22. A thin-film magnetic head as claimed in claim 21, wherein said first resist film is one which is formed by plasma polymerization.

23. A thin-film magnetic head as claimed in claim 21, wherein said first resist film is one which is made of carbon.

24. A thin-film magnetic head as claimed in claim 23, wherein said first resist film is one which is formed by plasma-assisted chemical vapor deposition method, sputtering method, or ion beam deposition method.